Patent US3375101A successfully refreshed from Google Patents.
Patent US5970378A successfully refreshed from Google Patents.
US5970378A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-step plasma treatment process for forming low resistance titanium nitride layer
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 1997-07-23
•
Granted: 1999-10-19
•
Expires: 2017-07-23
Abstract
Abstract A method for forming a titanium nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a virgin titanium nitride layer, where the virgin titanium nitride layer is formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material. The virgin titanium nitride layer is then annealed in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer. The refined titanium nitride layer is then annealed in a second plasma comprising nitrogen without hydrogen. Through the method there is formed a titanium nitride layer with superior step coverage, low resistivity and low impurities concentration.
Inventors
- 👤 Shaulin Shue
- 👤 Chen-Hua Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W20/033; H10W20/047; H10W20/048; H10W20/0523; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
83 words
A method for forming a titanium nitride layer comprising: providing a substrate; forming over the substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetralds-dialkylamido-titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; and annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen.
Claim 2
Independent Claim
83 words
A method for forming a titanium nitride layer comprising: providing a substrate; forming over the substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetralds-dialkylamido-titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; and annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the virgin titanium nitride layer is from about 100 to about 800 angstroms thick.
Claim 4
Dependent Claim
65 words
The method of claim 2 wherein the first plasma employs: a nitrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a hydrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a radio frequency power of about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 5
Dependent Claim
51 words
The method of claim 3 wherein the second plasma employs: a nitrogen flow rate of from about 400 to about 1600 standard cubic centimeters per minute (sccm); a radio frequency power of from about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 6
Dependent Claim
37 words
The method of claim 1 wherein the virgin titanium nitride layer is annealed in the first plasma and the refined titanium nitride layer is annealed in the second plasma sequentially in-situ without exposing the substrate to air.
Claim 7
Independent Claim
116 words
A method for forming a titanium nitride barrier layer within an integrated circuit comprising: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-dialkylamido-titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer; and forming over the low resistance titanium nitride layer an aluminum containing conductor metallization layer.
Claim 8
Independent Claim
116 words
A method for forming a titanium nitride barrier layer within an integrated circuit comprising: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-dialkylamido-titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer; and forming over the low resistance titanium nitride layer an aluminum containing conductor metallization layer.
Claim 9
Dependent Claim
20 words
The method of claim 6 wherein the virgin titanium nitride layer is from about 100 to about 800 angstroms thick.
Claim 10
Dependent Claim
65 words
The method of claim 7 wherein the first plasma employs: a nitrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a hydrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a radio frequency power of about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 11
Dependent Claim
51 words
The method of claim 8 wherein the second plasma employs: a nitrogen flow rate of from about 400 to about 1600 standard cubic centimeters per minute (sccm); a radio frequency power of from about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 12
Dependent Claim
38 words
The method of claim 6 wherein the virgin titanium nitride layer is annealed in the first plasma and the refined titanium nitride layer is annealed in the second plasma sequentially in-situ without exposing the semiconductor substrate to air.
Claim 13
Independent Claim
115 words
A method for forming a titanium nitride adhesion promoter layer within an integrated circuit: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the semiconductor substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer; and forming upon the low resistance titanium nitride layer a tungsten layer.
Claim 14
Independent Claim
115 words
A method for forming a titanium nitride adhesion promoter layer within an integrated circuit: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the semiconductor substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material; annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer; annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer; and forming upon the low resistance titanium nitride layer a tungsten layer.
Claim 15
Dependent Claim
20 words
The method of claim 11 wherein the virgin titanium nitride layer is from about 100 to about 800 angstroms thick.
Claim 16
Dependent Claim
65 words
The method of claim 12 wherein the first plasma employs: a nitrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a hydrogen flow rate of about 400 to about 800 standard cubic centimeters per minute (sccm); a radio frequency power of about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 17
Dependent Claim
51 words
The method of claim 13 wherein the second plasma employs: a nitrogen flow rate of from about 400 to about 1600 standard cubic centimeters per minute (sccm); a radio frequency power of from about 300 to about 400 watts; and an exposure time of from about 10 to about 60 seconds.
Claim 18
Dependent Claim
38 words
The method of claim 11 wherein the virgin titanium nitride layer is annealed in the first plasma and the refined titanium nitride layer is annealed in the second plasma sequentially in-situ without exposing the semiconductor substrate to air.
References Cited (Backward Citations)
US5723382A
Cited
US5378660A
Cited
US5504043A
Cited
US5399379A
Cited
US5378501A
Cited
US5576071A
Cited
US5567483A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-18 | 2003-04-19 | 2003-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-18 | 2007-04-19 | 2007-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-18 | 2011-04-19 | 2011-10-19 | $7700.00 | Window Closed / Lapsed |