US5970345A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming an integrated circuit having both low voltage and high voltage MOS transistors
Assignee: Texas Instruments Inc
•
Filing: 1998-10-22
•
Granted: 1999-10-19
•
Expires: 2018-10-22
Abstract
Abstract The invention comprises an integrated circuit having both low voltage and high voltage MOS transistors and a method for making the integrated circuit. In accordance with the method of making the integrated circuit, a first oxide layer is formed outwardly from a semiconductor substrate comprising a low voltage region and a high voltage region. A sacrificial layer is formed outwardly from the first oxide layer. The part of the sacrificial layer disposed outwardly from the low voltage region is removed to form an intermediate structure. The intermediate structure is selectively etched to remove the part of the first oxide layer disposed outwardly from the low voltage region. A second oxide layer is then formed comprising a first area disposed outwardly from the low voltage region and second area disposed outwardly from the high voltage region. The formation of the second oxide layer in the second area consumes the sacrificial layer.
Inventors
- 👤 Sunil V. Hattangady
- 👤 George R. Misium
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:03
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/8314; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
A method of making an integrated circuit having both low voltage and high voltage MOS transistors, comprising: forming a first oxide layer outwardly from a semiconductor substrate, the semiconductor substrate comprising a low voltage region and a high voltage region; forming a sacrificial layer outwardly from the first oxide layer; removing the part of the sacrificial layer disposed outwardly from the low voltage region to form an intermediate structure; selectively etching the intermediate structure to remove the part of the first oxide layer disposed outwardly from the low voltage region; forming a second oxide layer comprising a first area disposed outwardly from the low voltage region and a second area disposed outwardly from the high voltage region, wherein formation of the second oxide layer in the second area consumes the sacrificial layer.
Claim 2
Independent Claim
132 words
A method of making an integrated circuit having both low voltage and high voltage MOS transistors, comprising: forming a first oxide layer outwardly from a semiconductor substrate, the semiconductor substrate comprising a low voltage region and a high voltage region; forming a sacrificial layer outwardly from the first oxide layer; removing the part of the sacrificial layer disposed outwardly from the low voltage region to form an intermediate structure; selectively etching the intermediate structure to remove the part of the first oxide layer disposed outwardly from the low voltage region; forming a second oxide layer comprising a first area disposed outwardly from the low voltage region and a second area disposed outwardly from the high voltage region, wherein formation of the second oxide layer in the second area consumes the sacrificial layer.
Claim 3
Dependent Claim
70 words
The method of claim 1, further comprising: forming a protective layer outwardly from the sacrificial layer and the high voltage region of the semiconductor substrate, the protective layer formed after formation of the sacrificial layer and operable to prevent removal of the part of the sacrificial layer disposed outwardly from the high voltage region during removal of the part of the sacrificial layer disposed outwardly from the low voltage region.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein the first oxide layer is thermally grown.
Claim 5
Dependent Claim
12 words
The method of claim 1, wherein the first oxide layer is deposited.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein the sacrificial layer comprises amorphous silicon.
Claim 7
Dependent Claim
14 words
The method of claim 1, wherein the first oxide layer comprises a nitrided oxide.
Claim 8
Dependent Claim
15 words
The method of claim 2, wherein the protective layer comprises a patterned layer of photoresist.
Claim 9
Dependent Claim
13 words
The method of claim 1, wherein the second oxide layer is thermally grown.
Claim 10
Dependent Claim
23 words
The method of claim 1, wherein the first and second oxide layers are thermally grown, and wherein the sacrificial layer comprises amorphous silicon.
References Cited (Backward Citations)
US4851370A
Cited
JPH07183409A
Cited
EP0697716A2
Cited
US5665620A
Cited
EP0715344A2
Cited
US5716863A
Cited
EP0751559A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-18 | 2003-04-19 | 2003-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-18 | 2007-04-19 | 2007-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-18 | 2011-04-19 | 2011-10-19 | $7700.00 | Window Closed / Lapsed |