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US5968610A
Expired / Lapsed
US
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Multi-step high density plasma chemical vapor deposition process
Assignee: United Microelectronics Corp
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Filing: 1997-10-28
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Granted: 1999-10-19
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Expires: 2017-10-28
Abstract
Abstract A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the deposition of three oxide layers using high density plasma chemical vapor deposition (HDPCVD). A first HDPCVD step is carried out while keeping the substrate unbiased to form an oxide layer over the lines and in the gap. A second HDPCVD step in which the substrate is biased deposits a second oxide layer over the first oxide layer. During the second HDPCVD step some etching occurs and a portion of the first oxide layer is removed. A third HDPCVD step is carried out at a greater etch and sputtering rate than the second step to complete filling of the gap with dielectric material. The first oxide layer acts to protect the underlying structures from etching damage during the third step. Gaps between wiring lines can be filled with dielectric material without forming voids, even for high aspect ratio gaps.
Inventors
- 👤 Chih-Chien Liu
- 👤 Kuen-Jian Chen
- 👤 Yu-Hao Chen
- 👤 J. Y. Wu
- 👤 Water Lur
- 👤 Shih-Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/65; H10P14/6502; H10P14/6506; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
233 words
A method for depositing dielectric material in the formation of semiconductor device, comprising: providing a substrate having a substrate surface; providing over the substrate surface a plurality of structures separated from one another by gaps; performing a first stage of high density plasma chemical vapor deposition to form a conformal first layer of dielectric material overlaying the structures and within the gaps, including introducing a first accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material into the gaps at a first rate; performing a second stage of high density plasma chemical vapor deposition to form a second layer of dielectric material overlaying the first layer, including introducing a second accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material, at a second rate greater than the first rate and sufficient to etch a portion of the first layer, and without etching the structures; and performing a third stage of high density plasma chemical vapor deposition to form a third layer of dielectric material overlaying the second layer and preferentially filling the gaps, including introducing a third accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material at a third rate greater than the second rate and sufficient to increase the rate of filing the gaps with the dielectric material, and without etching the structures.
Claim 2
Independent Claim
233 words
A method for depositing dielectric material in the formation of semiconductor device, comprising: providing a substrate having a substrate surface; providing over the substrate surface a plurality of structures separated from one another by gaps; performing a first stage of high density plasma chemical vapor deposition to form a conformal first layer of dielectric material overlaying the structures and within the gaps, including introducing a first accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material into the gaps at a first rate; performing a second stage of high density plasma chemical vapor deposition to form a second layer of dielectric material overlaying the first layer, including introducing a second accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material, at a second rate greater than the first rate and sufficient to etch a portion of the first layer, and without etching the structures; and performing a third stage of high density plasma chemical vapor deposition to form a third layer of dielectric material overlaying the second layer and preferentially filling the gaps, including introducing a third accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material at a third rate greater than the second rate and sufficient to increase the rate of filing the gaps with the dielectric material, and without etching the structures.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein the gaps between the structures are completely filled with the dielectric material of the first, the second and the third layers.
Claim 4
Dependent Claim
56 words
The method of claim 1, wherein at least one of the structures comprises a bottom protective layer, a wiring line, and a top protective layer, wherein the bottom protective layer is disposed between the substrate surface and the wiring line and the wiring line is disposed between the bottom protective layer and the top protective layer.
Claim 5
Dependent Claim
28 words
The method of claim 3, wherein the structures include sidewalls facing adjacent gaps and top surfaces, and the first dielectric layer covers the sidewalls and the top surfaces.
Claim 6
Dependent Claim
29 words
The method of claim 4, wherein the first dielectric layer includes corner regions disposed on the structures at positions near the intersection of the top surface and the sidewalls.
Claim 7
Dependent Claim
21 words
The method of claim 5, wherein the portion of the first dielectric layer that is etched away includes the corner regions.
Claim 8
Dependent Claim
31 words
The method of claim 1, wherein the structures include top surfaces and the second dielectric layer includes portions having an angle of approximately 45 degrees with respect to the top surfaces.
Claim 9
Dependent Claim
26 words
The method of claim 7, wherein the third dielectric layer includes a portion having an angle of approximately 45 degrees with respect to the top surface.
Claim 10
Dependent Claim
13 words
The method of claim 1, wherein the first sputtering rate is substantially zero.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein the first accelerating potential is zero.
Claim 12
Dependent Claim
63 words
The method of claim 1, wherein the second stage of high density plasma chemical vapor deposition has a greater etch to deposition ratio than the first stage of high density plasma chemical vapor deposition and the third stage of high density plasma chemical vapor deposition has a greater etch to deposition ratio than the second stage of high density plasma chemical vapor deposition.
Claim 13
Dependent Claim
17 words
The method of claim 1, further comprising forming a fourth dielectric layer above the third dielectric layer.
Claim 14
Dependent Claim
18 words
The method of claim 12, wherein the fourth dielectric layer is formed using plasma enhanced chemical vapor deposition.
Claim 15
Dependent Claim
19 words
The method of claim 12, wherein the fourth dielectric layer is formed using high density plasma chemical vapor deposition.
Claim 16
Independent Claim
154 words
A method of depositing dielectric material in the formation of a semiconductor device, comprising: providing over a substrate a plurality of structures separated from one another by gaps; forming a first layer of dielectric material over the structures and within the gaps; forming a second layer of dielectric material overlaying the first layer, by performing high density plasma chemical vapor deposition, while introducing an accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering at a first rate sufficient to etch a portion of the first layer, and without etching the structures; and forming a third layer of dielectric material overlaying the second layer and filling the gaps, by performing high density plasma chemical vapor deposition, while introducing an accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material from the third layer into the gaps at a second rate greater than the first sputtering rate.
Claim 17
Independent Claim
154 words
A method of depositing dielectric material in the formation of a semiconductor device, comprising: providing over a substrate a plurality of structures separated from one another by gaps; forming a first layer of dielectric material over the structures and within the gaps; forming a second layer of dielectric material overlaying the first layer, by performing high density plasma chemical vapor deposition, while introducing an accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering at a first rate sufficient to etch a portion of the first layer, and without etching the structures; and forming a third layer of dielectric material overlaying the second layer and filling the gaps, by performing high density plasma chemical vapor deposition, while introducing an accelerating potential between plasma-excited deposition gases and the substrate to produce sputtering of the dielectric material from the third layer into the gaps at a second rate greater than the first sputtering rate.
Claim 18
Dependent Claim
33 words
The method of claim 15, wherein the etch to deposition ratio during formation of the third dielectric layer is greater than the etch to deposition ratio during formation of the second dielectric layer.
Claim 19
Dependent Claim
19 words
The method of claim 16, wherein the first dielectric layer is formed using high density plasma chemical vapor deposition.
Claim 20
Dependent Claim
18 words
The method of claim 17, wherein the substrate is unbiased during the formation of the first dielectric layer.
Claim 21
Dependent Claim
17 words
The method of claim 15, wherein the first dielectric layer is formed using plasma-enhanced chemical vapor deposition.
Claim 22
Dependent Claim
23 words
The method of claim 15, wherein at least one of the first, the second and the third dielectric layers comprises an oxynitride material.
Claim 23
Dependent Claim
11 words
The method of claim 15, wherein the structures are wiring lines.
Claim 24
Dependent Claim
24 words
The method of claim 15, whereby the gaps between structures are filled with dielectric material of the first, the second and the third layers.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-18 | 2003-04-19 | 2003-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-18 | 2007-04-19 | 2007-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-18 | 2011-04-19 | 2011-10-19 | $7700.00 | Window Closed / Lapsed |