Patent US5963818A successfully refreshed from Google Patents.
US5963818A
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Combined trench isolation and inlaid process for integrated circuit formation
Assignee: NXP USA Inc
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Filing: 1997-09-17
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Granted: 1999-10-05
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Expires: 2017-09-17
Abstract
Abstract A method for forming an integrated circuit involves forming trench isolation regions (208a) and a damascene gate electrode region (214) simultaneous with one another via overlapping process steps. By performing this simultaneous formation of a trench region (208a) and a damascene gate electrode (214) using a common dielectric layer (208), MOS integrated circuits can be formed with reduced processing steps while simultaneously avoiding adverse polysilicon stringers which are present in prior art damacene-formed gate electrode. A single dielectric layer (208) is deposited in order to provide trench fill material for a trench region (208a) while simultaneously providing the material needed for form an opening (210) which is used to define the dimensions and material content of a gate electrode (214).
Inventors
- 👤 Soolin Kao
- 👤 Sergio A. Ajuria
- 👤 Diann M. Dow
- 👤 Susan E. Soggs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0225; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/017; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10D30/0217
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
118 words
A method for forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming a gate oxide region; forming a trench region in the semiconductor substrate after forming the gate oxide region; filling the trench region with a dielectric material by depositing a dielectric layer as the dielectric material wherein the dielectric layer is: (1) etched to contain an opening which is used to define at least a portion of a gate electrode for the transistor: and (2) used to provide trench fill material for the trench region to form trench isolation structures; and forming a transistor over the gate oxide region wherein the transistor uses the gate oxide region as a gate dielectric.
Claim 2
Independent Claim
118 words
A method for forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming a gate oxide region; forming a trench region in the semiconductor substrate after forming the gate oxide region; filling the trench region with a dielectric material by depositing a dielectric layer as the dielectric material wherein the dielectric layer is: (1) etched to contain an opening which is used to define at least a portion of a gate electrode for the transistor: and (2) used to provide trench fill material for the trench region to form trench isolation structures; and forming a transistor over the gate oxide region wherein the transistor uses the gate oxide region as a gate dielectric.
Claim 3
Dependent Claim
21 words
The method of claim 1 further comprising the step of: etching away the dielectric layer selective to an underlying silicon-containing layer.
Claim 4
Dependent Claim
37 words
The method of claim 1, wherein the step of forming the transistor and filling the trench region comprises: forming nitride spacers within the opening which is used to define at least a portion of the gate electrode.
Claim 5
Dependent Claim
60 words
The method of claim 1, wherein the step of forming the transistor and filling the trench region comprises: forming a first polysilicon layer both under the dielectric layer and above the gate oxide region and a second polysilicon layer over the dielectric layer wherein the first and second polysilicon layers are used to form a gate electrode for the transistor.
Claim 6
Dependent Claim
26 words
The method of claim 1, further comprising: depositing a layer of polysilicon over the gate oxide region to protect the gate oxide region from subsequent processing.
Claim 7
Dependent Claim
35 words
The method of claim 5, further comprising: patterning the layer of polysilicon to form a polysilicon region which remains on the semiconductor structure to function as a portion of a gate electrode for the transistor.
Claim 8
Dependent Claim
29 words
The method of claim 1, wherein the step of forming the trench region further comprises: etching through a portion of the gate oxide region to form the trench region.
Claim 9
Independent Claim
98 words
A method of forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate having an upper surface and an active region of the upper surface; forming a trench region in the semiconductor substrate, wherein the trench region extends below the upper surface of the semiconductor substrate; forming a dielectric region over a portion of the semiconductor substrate to fill the trench region and overly the active region of the semiconductor substrate; and forming a gate opening in the dielectric region over a portion of the active region to define a transistor gate electrode location.
Claim 10
Independent Claim
98 words
A method of forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate having an upper surface and an active region of the upper surface; forming a trench region in the semiconductor substrate, wherein the trench region extends below the upper surface of the semiconductor substrate; forming a dielectric region over a portion of the semiconductor substrate to fill the trench region and overly the active region of the semiconductor substrate; and forming a gate opening in the dielectric region over a portion of the active region to define a transistor gate electrode location.
Claim 11
Dependent Claim
30 words
The method of claim 8, further comprising the step of: forming a gate oxide region over the semiconductor substrate from a portion of the substrate which is exposed through opening.
Claim 12
Dependent Claim
50 words
The method of claim 9, further comprising the steps of: forming a spacer within the gate opening prior to the step of forming the gate oxide region; and implanting a portion of the substrate, which is exposed through the gate opening, to form a doped channel region within the substrate.
Claim 13
Dependent Claim
33 words
The method of claim 10, further comprising the step of: forming a first conductive region within the gate opening subsequent the steps of forming the spacer and implanting a portion of the substrate.
Claim 14
Dependent Claim
42 words
The method of claim 11, wherein the step of forming the first conductive region comprises the substeps of: forming a conductive layer over the trench region and active region; and planarizing the conductive layer over the gate opening using a polishing process.
Claim 15
Dependent Claim
41 words
The method of claim 11, further comprising the steps of: removing a portion the dielectric region substantially above the upper surface of the semiconductor substrate to leave behind trench fill material within the trench region to provide electrical isolation between transistors.
Claim 16
Dependent Claim
36 words
The method of claim 8, further comprising the steps of: forming a gate oxide region over the semiconductor substrate; and forming a first conductive region over the gate oxide region prior to forming the trench region.
Claim 17
Dependent Claim
31 words
The method of claim 14, further comprising the steps of: etching an opening through the gate oxide region, the first conductive region, and the semiconductor substrate to form the trench region.
Claim 18
Dependent Claim
49 words
The method of claim 14, further comprising the steps of: removing a portion the dielectric region substantially above the first conductive region; and removing a first portion the first conductive region, wherein a second portion of the first conductive region within the gate opening remains over the dielectric region.
Claim 19
Dependent Claim
40 words
The method of claim 14, further comprising the steps of: forming a spacer within the gate opening prior to the step of forming the gate oxide region; and implanting a channel region portion of the substrate through the gate opening.
Claim 20
Dependent Claim
32 words
The method of claim 17, further comprising the step of: forming a first conductive region within the gate opening subsequent both the steps of forming the spacer and implanting the channel region.
Claim 21
Dependent Claim
60 words
The method of claim 18, wherein the step of forming the first conductive region comprises the substeps of: forming a conductive layer over the trench region and active region; and planarizing the conductive layer over the gate opening to form a conductive plug region in the gate opening which functions as a portion of a gate electrode of the transistor.
Claim 22
Dependent Claim
45 words
The method of claim 19, further comprising the steps of: removing a portion the dielectric region substantially above the upper surface of the semiconductor substrate so that a portion of the dielectric region is left behind to form trench fill material within the trench region.
Claim 23
Independent Claim
114 words
A method for forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming a dielectric region having a recessed region; forming an opening in the dielectric region; forming a conductive region over the dielectric region; polishing, with a first polishing environment, the conductive region to form a conductive plug within the opening and a conductive defect in the recessed region; changing the first polishing environment to a second polishing environment to remove an upper portion of the dielectric region adjacent to the conductive defect to further expose the conductive defect; and changing the second polishing environment to a third polishing environment to remove substantially all of the conductive defect.
Claim 24
Independent Claim
114 words
A method for forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming a dielectric region having a recessed region; forming an opening in the dielectric region; forming a conductive region over the dielectric region; polishing, with a first polishing environment, the conductive region to form a conductive plug within the opening and a conductive defect in the recessed region; changing the first polishing environment to a second polishing environment to remove an upper portion of the dielectric region adjacent to the conductive defect to further expose the conductive defect; and changing the second polishing environment to a third polishing environment to remove substantially all of the conductive defect.
Claim 25
Independent Claim
178 words
A method of forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming an oxide layer over the semiconductor substrate; forming a first conductive layer over the oxide layer; forming a first opening into the semiconductor through the oxide layer and the first conductive layer; forming a dielectric to fill the first opening and overlie the first conductive layer; forming a second opening in the dielectric layer over an active area of the semiconductor substrate to expose a portion of the first conductive layer; forming a spacer within the second opening; forming a second conductive layer to fill remaining portions of the second opening; polishing the second conductive layer to remove substantially all of the second conductive layer positioned outside the second opening; removing a portion of the dielectric layer positioned outside the first opening to form a dielectric fill region in the first opening whereby trench isolation is formed; and removing a portion of the first conductive layer that is exposed by the step of removing a portion of the dielectric layer.
Claim 26
Independent Claim
178 words
A method of forming a semiconductor structure, the method comprising the steps of: providing a semiconductor substrate; forming an oxide layer over the semiconductor substrate; forming a first conductive layer over the oxide layer; forming a first opening into the semiconductor through the oxide layer and the first conductive layer; forming a dielectric to fill the first opening and overlie the first conductive layer; forming a second opening in the dielectric layer over an active area of the semiconductor substrate to expose a portion of the first conductive layer; forming a spacer within the second opening; forming a second conductive layer to fill remaining portions of the second opening; polishing the second conductive layer to remove substantially all of the second conductive layer positioned outside the second opening; removing a portion of the dielectric layer positioned outside the first opening to form a dielectric fill region in the first opening whereby trench isolation is formed; and removing a portion of the first conductive layer that is exposed by the step of removing a portion of the dielectric layer.
Claim 27
Dependent Claim
30 words
The method of claim 22, further comprising the steps of: implanting the semiconductor substrate with dopant atoms through the second opening before the step of forming the second conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-04 | 2003-04-05 | 2003-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-04 | 2007-04-05 | 2007-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-04 | 2011-04-05 | 2011-10-05 | $7700.00 | Window Closed / Lapsed |