Patent US5523162A successfully refreshed from Google Patents.
Patent US5963788A successfully refreshed from Google Patents.
US5963788A
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Method for integrating microelectromechanical devices with electronic circuitry
Assignee: National Technology and Engineering Solutions of Sandia LLC
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Filing: 1997-11-19
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Granted: 1999-10-05
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Expires: 2017-11-19
Abstract
Abstract A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.
Inventors
- 👤 Carole C. Barron
- 👤 James G. Fleming
- 👤 Stephen Montague
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00222; B81C1/00246; G03F9/00; G03F9/70; H; H10; H10W; H10W70/00; H10W70/60; H10W90/00; H10W90/20; H10W90/28; B81C2203/00; B81C2203/07; B81C2203/0707; B81C2203/0728; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828; Y; Y10; Y10S; Y10S148/00; Y10S148/105
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
144 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) etching a cavity within a first portion of the substrate; (b) fabricating the MEM device within the cavity, and filling the cavity with a sacrificial material; (c) fabricating the electronic circuitry comprising a plurality of transistors within a second portion of the substrate proximate to the first portion, and interconnecting the electronic circuitry to the MEM device; (d) protecting the electronic circuitry by depositing a layer of tungsten to blanket the second portion of the substrate and cover the electronic circuitry; and (e) releasing the MEM device for operation thereof by removing at least a portion of the sacrificial material filling the cavity by etching the sacrificial material with a first wet etchant which does not substantially remove the layer of tungsten protecting the electronic circuitry.
Claim 2
Independent Claim
144 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) etching a cavity within a first portion of the substrate; (b) fabricating the MEM device within the cavity, and filling the cavity with a sacrificial material; (c) fabricating the electronic circuitry comprising a plurality of transistors within a second portion of the substrate proximate to the first portion, and interconnecting the electronic circuitry to the MEM device; (d) protecting the electronic circuitry by depositing a layer of tungsten to blanket the second portion of the substrate and cover the electronic circuitry; and (e) releasing the MEM device for operation thereof by removing at least a portion of the sacrificial material filling the cavity by etching the sacrificial material with a first wet etchant which does not substantially remove the layer of tungsten protecting the electronic circuitry.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein the step for etching the cavity within the first portion of the substrate comprises etching the cavity into at least one semiconductor layer formed on the substrate.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the substrate comprises silicon.
Claim 5
Dependent Claim
49 words
The method of claim 1 wherein the step for fabricating the MEM device within the cavity comprises steps for depositing and patterning by etching at least one layer of a micromachineable material selected from the group consisting of polysilicon, silicon dioxide, silicon nitride, silicate glass, metals and metal alloys.
Claim 6
Dependent Claim
40 words
The method of claim 4 wherein the step for filling the cavity with a sacrificial material comprises depositing a sacrificial material selected from the group consisting of silicon dioxide and a silicate glass within the cavity to fill the cavity.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein the step for fabricating the MEM device includes a step for annealing the MEM device, thereby relieving stress therein.
Claim 8
Dependent Claim
22 words
The method of claim 1 further including a step for planarizing the substrate prior to the step for fabricating the electronic circuitry.
Claim 9
Dependent Claim
34 words
The method of claim 1 wherein the step for fabricating the electronic circuitry comprises steps for fabricating a plurality of transistors selected from the group consisting of CMOS transistors, BiCMOS transistors, and bipolar transistors.
Claim 10
Dependent Claim
24 words
The method of claim 1 wherein the step for depositing the layer of tungsten comprises depositing the layer of tungsten by chemical vapor deposition.
Claim 11
Dependent Claim
20 words
The method of claim 1 wherein the layer of tungsten is deposited to a layer thickness of about 0.1-1 microns.
Claim 12
Dependent Claim
39 words
The method of claim 1 wherein the step for protecting the electronic circuitry further comprises a step for depositing an adhesion layer over the second portion of the substrate prior to the step for depositing the layer of tungsten.
Claim 13
Dependent Claim
15 words
The method of claim 11 wherein the adhesion layer comprises a layer of titanium nitride.
Claim 14
Dependent Claim
20 words
The method of claim 12 wherein the titanium nitride layer is deposited to a layer thickness of about 50 nanometers.
Claim 15
Dependent Claim
26 words
The method of claim 12 further including a step for removing the layers of tungsten and titanium nitride after the step for releasing the MEM device.
Claim 16
Dependent Claim
14 words
The method of claim 1 wherein the first wet etchant comprises hydrofluoric acid (HF).
Claim 17
Dependent Claim
15 words
The method of claim 15 wherein the first wet etchant further comprises hydrochloric acid (HCI).
Claim 18
Dependent Claim
23 words
The method of claim 1 further including a step for removing the layer of tungsten after the step for releasing the MEM device.
Claim 19
Dependent Claim
39 words
The method of claim 17 wherein the step for removing the layer of tungsten comprises exposing the layer of tungsten to a second wet etchant having a chemical composition different from the chemical composition of the first wet etchant.
Claim 20
Dependent Claim
13 words
The method of claim 18 wherein the second wet etchant comprises hydrogen peroxide.
Claim 21
Independent Claim
128 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) fabricating the MEM device at least in part within or from a cavity formed in a first portion of the substrate and encapsulating the MEM device with a sacrificial material; (b) fabricating the electronic circuitry in a second portion of the substrate, and interconnecting the electronic circuitry to the MEM device; (c) depositing layers of titanium nitride and tungsten over the electronic circuitry for protecting the electronic circuitry from exposure to a first wet etchant comprising, at least in part, hydrofluoric acid; and (d) releasing the MEM device for operation by etching away at least a portion of the sacrificial material encapsulating the MEM device with the first wet etchant.
Claim 22
Independent Claim
128 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) fabricating the MEM device at least in part within or from a cavity formed in a first portion of the substrate and encapsulating the MEM device with a sacrificial material; (b) fabricating the electronic circuitry in a second portion of the substrate, and interconnecting the electronic circuitry to the MEM device; (c) depositing layers of titanium nitride and tungsten over the electronic circuitry for protecting the electronic circuitry from exposure to a first wet etchant comprising, at least in part, hydrofluoric acid; and (d) releasing the MEM device for operation by etching away at least a portion of the sacrificial material encapsulating the MEM device with the first wet etchant.
Claim 23
Dependent Claim
10 words
The method of claim 20 wherein the substrate comprises silicon.
Claim 24
Dependent Claim
19 words
The method of claim 20 further including a step for annealing the encapsulated MEM device for relieving stress therein.
Claim 25
Dependent Claim
22 words
The method of claim 20 further including a step for planarizing the substrate prior to the step for fabricating the electronic circuitry.
Claim 26
Dependent Claim
42 words
The method of claim 20 wherein the step for fabricating the MEM device comprises steps for etching a cavity into the substrate, depositing a plurality of material layers into the cavity, and patterning by etching at least one of the material layers.
Claim 27
Dependent Claim
29 words
The method of claim 24 wherein the material layers comprise micromachineable materials selected from the group consisting of polysilicon, silicon dioxide, silicon nitride, silicate glass, metals and metal alloys.
Claim 28
Dependent Claim
47 words
The method of claim 20 wherein the step for fabricating the MEM device comprises steps for etching a cavity into a semiconductor layer formed above the substrate, depositing a plurality of material layers into the cavity, and patterning by etching at least one of the material layers.
Claim 29
Dependent Claim
29 words
The method of claim 26 wherein the material layers comprise micromachineable materials selected from the group consisting of polysilicon, silicon dioxide, silicon nitride, silicate glass, metals and metal alloys.
Claim 30
Dependent Claim
16 words
The method of claim 20 wherein the sacrificial material comprises silicon dioxide or a silicate glass.
Claim 31
Dependent Claim
34 words
The method of claim 20 wherein the step for fabricating the electronic circuitry comprises steps for fabricating a plurality of transistors selected from the group consisting of CMOS transistors, BiCMOS transistors, and bipolar transistors.
Claim 32
Dependent Claim
44 words
The method of claim 20 wherein the step for depositing layers of titanium nitride and tungsten over the electronic circuitry comprises depositing the layers of titanium nitride and tungsten by deposition processes selected from the group consisting of sputter deposition and chemical vapor deposition.
Claim 33
Dependent Claim
16 words
The method of claim 20 wherein the layer of titanium nitride is about 50 nanometers thick.
Claim 34
Dependent Claim
15 words
The method of claim 20 wherein the layer of tungsten is about 0.1-1 microns thick.
Claim 35
Dependent Claim
27 words
The method of claim 20 further including a step for removing the layers of titanium nitride and tungsten after the step for releasing the encapsulated MEM device.
Claim 36
Dependent Claim
45 words
The method of claim 33 wherein the step for removing the layers of titanium nitride and tungsten comprises exposing the layers of titanium nitride and tungsten to a second wet etchant having a chemical composition different from the chemical composition of the first wet etchant.
Claim 37
Dependent Claim
17 words
The method of claim 34 wherein the second wet etchant comprises, at least in part, hydrogen peroxide.
Claim 38
Independent Claim
171 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) fabricating the MEM device at least in part within or from a cavity formed in a first portion of the substrate and encapsulating the MEM device with a sacrificial material; (b) planarizing the substrate to remove any of the sacrificial material extending upward beyond the cavity thereby providing a substantially planar upper surface for the substrate; (c) fabricating the electronic circuitry in a second portion of the substrate, and interconnecting the electronic circuitry to the MEM device; (d) protecting the electronic circuitry by depositing layers of titanium nitride and tungsten over the electronic circuitry in the second portion of the substrate; (e) releasing the MEM device by exposing the MEM device to a first wet etching comprising, at least in part, hydrofluoric acid for sufficient time to remove a portion of the sacrificial material encapsulating the MEM device; and (f) removing the deposited layers of titanium nitride and tungsten protecting the electronic circuitry.
Claim 39
Independent Claim
171 words
A method for integrating a microelectromechanical (MEM) device with electronic circuitry on a substrate comprising steps for: (a) fabricating the MEM device at least in part within or from a cavity formed in a first portion of the substrate and encapsulating the MEM device with a sacrificial material; (b) planarizing the substrate to remove any of the sacrificial material extending upward beyond the cavity thereby providing a substantially planar upper surface for the substrate; (c) fabricating the electronic circuitry in a second portion of the substrate, and interconnecting the electronic circuitry to the MEM device; (d) protecting the electronic circuitry by depositing layers of titanium nitride and tungsten over the electronic circuitry in the second portion of the substrate; (e) releasing the MEM device by exposing the MEM device to a first wet etching comprising, at least in part, hydrofluoric acid for sufficient time to remove a portion of the sacrificial material encapsulating the MEM device; and (f) removing the deposited layers of titanium nitride and tungsten protecting the electronic circuitry.
Claim 40
Dependent Claim
42 words
The method of claim 36 wherein the step for fabricating the MEM device comprises steps for etching a cavity into the substrate, depositing a plurality of material layers into the cavity, and patterning by etching at least one of the material layers.
Claim 41
Dependent Claim
34 words
The method of claim 37 wherein the substrate comprises silicon, and the material layers comprise micromachineable materials selected from the group consisting of polysilicon, silicon dioxide, silicon nitride, silicate glass, metals and metal alloys.
Claim 42
Dependent Claim
18 words
The method of claim 36 further including a step for annealing the MEM device for relieving stress therein.
Claim 43
Dependent Claim
14 words
The method of claim 36 wherein the electronic circuitry comprises a plurality of transistors.
Claim 44
Dependent Claim
22 words
The method of claim 40 wherein the transistors are selected from the group consisting of CMOS transistors, BiCMOS transistors, and bipolar transistors.
Claim 45
Dependent Claim
46 words
The method of claim 36 wherein the step for removing the deposited layers of titanium nitride and tungsten comprises exposing the layers of titanium nitride and tungsten to a second wet etchant having a chemical composition different from the chemical composition of the first wet etchant.
Claim 46
Dependent Claim
17 words
The method of claim 42 wherein the second wet etchant comprises, at least in part, hydrogen peroxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-04 | 2003-04-05 | 2003-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-04 | 2007-04-05 | 2007-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-04 | 2011-04-05 | 2011-10-05 | $7700.00 | Window Closed / Lapsed |