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US5962866A Expired / Lapsed US ⏱️ 0.0 years remaining

Microbridge superconductor device utilizing stepped junctions

Assignee: MAGNESENSORS Inc
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Filing: 1996-06-27
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Granted: 1999-10-05
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Expires: 2016-06-27
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Abstract

Abstract A superconductor device has a substrate with an inclined surface that divides the substrate surface into a lower planar substrate surface and an upper planar substrate surface. A lower layer of an anisotropic superconductor material is epitaxially deposited on the lower planar substrate surface so that an a-axis of the anisotropic superconductor material of the lower layer is exposed at a top edge of the lower layer. An upper layer of an anisotropic superconductor material is epitaxially deposited on the upper planar substrate surface so that an a-axis of the anisotropic superconductor material of the upper layer is exposed at a top edge of the upper layer. A layer of a non-superconductor material overlies the inclined surface and the layers of anisotropic superconductor material.

Inventors

  • 👤 Mark S. DiIorio
  • 👤 Shozo Yoshizumi
  • 👤 Kai-Yueh Yang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 19:36
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124; H10N60/01; H10N60/0912; H10N60/0941

Claims Analysis

Total Claims: 23
Claim 1
Independent Claim 185 words
A microbridge superconductor device, comprising: a substrate having a lower planar substrate surface, an inclined substrate surface having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface, and an upper planar substrate surface parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined substrate surface; a lower layer of an anisotropic superconductor material on the lower planar substrate surface and epitaxially related thereto, the anisotropic superconductor material having a c-axis and being oriented such that the c-axis is not perpendicular to the lower planar substrate surface; an upper layer of the anisotropic superconductor material on the upper planar substrate surface and epitaxially related thereto, the anisotropic superconductor material being oriented such that the c-axis is not perpendicular to the upper planar substrate surface, there being a gap between the lower layer of the anisotropic superconductor and the upper layer of the anisotropic superconductor; and a layer of a non-superconductor material overlying the inclined substrate surface in the gap and the layers of anisotropic superconductor material.
Claim 2
Dependent Claim 185 words
A microbridge superconductor device, comprising: a substrate having a lower planar substrate surface, an inclined substrate surface having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface, and an upper planar substrate surface parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined substrate surface; a lower layer of an anisotropic superconductor material on the lower planar substrate surface and epitaxially related thereto, the anisotropic superconductor material having a c-axis and being oriented such that the c-axis is not perpendicular to the lower planar substrate surface; an upper layer of the anisotropic superconductor material on the upper planar substrate surface and epitaxially related thereto, the anisotropic superconductor material being oriented such that the c-axis is not perpendicular to the upper planar substrate surface, there being a gap between the lower layer of the anisotropic superconductor and the upper layer of the anisotropic superconductor; and a layer of a non-superconductor material overlying the inclined substrate surface in the gap and the layers of anisotropic superconductor material.
Claim 3
Dependent Claim 21 words
The superconductor device of claim 1, wherein the anisotropic superconductor material has a superconducting transition temperature greater than about 77 K.
Claim 4
Dependent Claim 31 words
The superconductor device of claim 1, wherein the anisotropic superconductor material is the compound YBa 2 Cu 3 O 7-x , where x is selected such that the compound is superconducting.
Claim 5
Dependent Claim 72 words
The superconductor device of claim 1, wherein the anisotropic superconductor material is selected from the group consisting of the compound Bi 2 Ca 2 Sr 2 Cu 3 O x , Tl 2 Ba 2 Ca 2 Cu 3 O x , HgBa 2 CaCu 2 O x , and HgBa 2 Ca 2 Cu 3 O x , where x in each case is selected such that the compound is superconducting.
Claim 6
Dependent Claim 16 words
The superconductor device of claim 1, wherein the substrate comprises a layer deposited on a base.
Claim 7
Dependent Claim 49 words
The superconductor device of claim 1, wherein the substrate is selected from the group consisting of LaAlO 3 , PrGaO 3 , LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, SrAl 0 .5 Ta 0 .5 O 3 , Al 2 O 3 , and yttria-stabilized zirconia.
Claim 8
Dependent Claim 28 words
The superconductor device of claim 1, wherein the layers of anisotropic superconductor material define in plan view a loop that intersects the inclined substrate surface at two locations.
Claim 9
Dependent Claim 32 words
The superconductor device of claim 1, wherein the planes of the lower substrate surface and the upper substrate surface are separated by a distance of from about 200 to about 3000 Angstroms.
Claim 10
Dependent Claim 28 words
The superconductor device of claim 1, wherein the thickness of the upper and lower layers of the anisotropic superconductor material is from about 100 to about 2900 Angstroms.
Claim 11
Dependent Claim 24 words
The superconductor device of claim 1, wherein the non-superconductor material is selected from the group consisting of a metal, a semi-metal, and a semiconductor.
Claim 12
Dependent Claim 44 words
The superconductor device of claim 1, wherein the non-superconductor material is selected from the group consisting of silver, gold, a silver-gold alloy, La 0 .5 Sr 0 .5 CoO 3 , Sr 1-x Ca x RuO 3 (0≦x≦1), and 5% Nb-doped SrTiO 3 .
Claim 13
Dependent Claim 44 words
The superconductor device of claim 1, wherein the c-axis of the lower layer of the anisotropic superconductor lies parallel to the lower planar substrate surface, and the c-axis of the upper layer of the anisotropic superconductor lies parallel to the upper planar substrate surface.
Claim 14
Dependent Claim 68 words
The superconductor device of claim 1, wherein the c-axis of the lower layer of the anisotropic superconductor is inclined at an angle of more than 0 but less than 90 degrees to the lower planar substrate surface, and the c-axis of the upper layer of the anisotropic superconductor is inclined at an angle of more than 0 but less than 90 degrees to the upper planar substrate surface.
Claim 15
Dependent Claim 136 words
A microbridge superconductor device, comprising: a substrate having an inclined substrate surface, the inclined substrate surface dividing the substrate surface into a lower planar substrate surface and an upper planar substrate surface; a lower layer of an anisotropic superconductor material, having an a-axis and a c-axis, epitaxially deposited on the lower planar substrate surface so that the a-axis of the anisotropic superconductor material of the lower layer is exposed at a top edge of the lower layer; an upper layer of an anisotropic superconductor material epitaxially deposited on the upper planar substrate surface so that the a-axis of the anisotropic superconductor material of the upper layer is exposed at a top edge of the upper layer; and a layer of a non-superconductor material overlying the inclined substrate surface and the layers of the anisotropic superconductor material.
Claim 16
Dependent Claim 136 words
A microbridge superconductor device, comprising: a substrate having an inclined substrate surface, the inclined substrate surface dividing the substrate surface into a lower planar substrate surface and an upper planar substrate surface; a lower layer of an anisotropic superconductor material, having an a-axis and a c-axis, epitaxially deposited on the lower planar substrate surface so that the a-axis of the anisotropic superconductor material of the lower layer is exposed at a top edge of the lower layer; an upper layer of an anisotropic superconductor material epitaxially deposited on the upper planar substrate surface so that the a-axis of the anisotropic superconductor material of the upper layer is exposed at a top edge of the upper layer; and a layer of a non-superconductor material overlying the inclined substrate surface and the layers of the anisotropic superconductor material.
Claim 17
Dependent Claim 32 words
The superconductor device of claim 14, wherein the lower layer and the upper layer of anisotropic superconductor material define in plan view a loop that intersects the inclined surface at two locations.
Claim 18
Dependent Claim 44 words
The superconductor device of claim 14, wherein the c-axis of the lower layer of the anisotropic superconductor lies parallel to the lower planar substrate surface, and the c-axis of the upper layer of the anisotropic superconductor lies parallel to the upper planar substrate surface.
Claim 19
Dependent Claim 68 words
The superconductor device of claim 14, wherein the c-axis of the lower layer of the anisotropic superconductor is inclined at an angle of more than 0 but less than 90 degrees to the lower planar substrate surface, and the c-axis of the upper layer of the anisotropic superconductor is inclined at an angle of more than 0 but less than 90 degrees to the upper planar substrate surface.
Claim 20
Dependent Claim 22 words
The superconductor device of claim 14, wherein the lower layer of anisotropic superconductor material is beveled away from the inclined substrate surface.
Claim 21
Dependent Claim 22 words
The superconductor device of claim 14, wherein the lower layer of anisotropic superconductor material is in contact with the inclined substrate surface.
Claim 22
Dependent Claim 122 words
A microbridge superconductor device, comprising: a substrate having an inclined substrate surface, the inclined substrate surface dividing the substrate surface into a lower planar substrate surface and an upper planar substrate surface; and a loop on the substrate surface that intersects the inclined substrate surface at two junction locations, the loop comprising a superconductor layer of an anisotropic superconductor material epitaxially deposited overlying the lower planar substrate surface with the c-axis not perpendicular to the plane of the lower substrate surface and the upper planar substrate surface with the c-axis not perpendicular to the plane of the upper substrate surface, and a layer of normal material deposited overlying the inclined substrate surface and contacting the superconductor layer at the two junction locations.
Claim 23
Dependent Claim 122 words
A microbridge superconductor device, comprising: a substrate having an inclined substrate surface, the inclined substrate surface dividing the substrate surface into a lower planar substrate surface and an upper planar substrate surface; and a loop on the substrate surface that intersects the inclined substrate surface at two junction locations, the loop comprising a superconductor layer of an anisotropic superconductor material epitaxially deposited overlying the lower planar substrate surface with the c-axis not perpendicular to the plane of the lower substrate surface and the upper planar substrate surface with the c-axis not perpendicular to the plane of the upper substrate surface, and a layer of normal material deposited overlying the inclined substrate surface and contacting the superconductor layer at the two junction locations.

References Cited (Backward Citations)

US4925829A Cited
JPH01161786A Cited
JPH01241874A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-10-04 2003-04-05 2003-10-05 $2000.00 Window Closed / Lapsed
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