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US5961361A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for manufacturing electrode plate for plasma processing device

Assignee: Tokai Carbon Co Ltd
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Filing: 1997-09-22
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Granted: 1999-10-05
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Expires: 2017-09-22
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Abstract

Abstract A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 μm to 1.25 mm.

Inventors

  • 👤 Shosuke Endoh
  • 👤 Masaaki Mitsuno

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 17:19
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; H01J9/00; H01J9/02

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 80 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon; and a polishing step of polishing at least one face of said baking material, which is exposed to plasma, to a depth of at least 20 μm.
Claim 2
Independent Claim 80 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon; and a polishing step of polishing at least one face of said baking material, which is exposed to plasma, to a depth of at least 20 μm.
Claim 3
Dependent Claim 41 words
A method for manufacturing an electrode plate for a plasma processing device according to claim 1, wherein said polishing step includes a step of polishing one face of said baking material to a depth of from 20 μm to 1.00 mm.
Claim 4
Independent Claim 80 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a step of polishing at least one face of said resin forming material, which is exposed to plasma, to a depth of at least 25 μm; and a baking step of carbonizing said polished resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon.
Claim 5
Independent Claim 80 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a step of polishing at least one face of said resin forming material, which is exposed to plasma, to a depth of at least 25 μm; and a baking step of carbonizing said polished resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon.
Claim 6
Dependent Claim 42 words
A method for manufacturing an electrode plate for a plasma processing device according to claim 1, wherein said polishing step includes a step of polishing one face of said resin forming material to a depth of from 25 μm to 1.25 mm.
Claim 7
Independent Claim 130 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a primary baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a primary baking material composed of glass-like carbon; and a secondary baking step of heating said primary baking material under a non-oxidizing atmosphere at a temperature higher than in the primary baking step to prepare a secondary baking material; and a polishing step of polishing at least one face of said resin forming material, said primary baking material, and/or said secondary baking material, the face being exposed to plasma, to remove curing uneven portions formed on said one face in said curing step.
Claim 8
Independent Claim 130 words
A method for manufacturing an electrode plate for a plasma processing device, comprising: a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material; a primary baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a primary baking material composed of glass-like carbon; and a secondary baking step of heating said primary baking material under a non-oxidizing atmosphere at a temperature higher than in the primary baking step to prepare a secondary baking material; and a polishing step of polishing at least one face of said resin forming material, said primary baking material, and/or said secondary baking material, the face being exposed to plasma, to remove curing uneven portions formed on said one face in said curing step.
Claim 9
Dependent Claim 63 words
A method for manufacturing an electrode plate for a plasma processing device according to claim 5, wherein said polishing step includes a step of polishing one face of said resin forming material to a depth of from 25 μm to 1.25 mm or a step of polishing one face of said baking material to a depth of from 20 μm to 1.00 mm.

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3.5 Years (Year 4) 2002-10-04 2003-04-05 2003-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-10-04 2007-04-05 2007-10-05 $3760.00 Window Closed / Lapsed
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