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US5960252A
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Method for manufacturing a semiconductor memory device having a ferroelectric capacitor
Assignee: NEC Corp
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Filing: 1997-04-30
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Granted: 1999-09-28
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Expires: 2017-04-30
Abstract
Abstract A method for manufacturing a nonvolatile semiconductor memory device comprises the steps of forming a ferroelectric capacitor, sputtering a first dielectric film on the ferroelectric capacitor, and depositing a second dielectric film on the first dielectric film by a CVD process using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent at a temperature between 350 and 500° C. The first dielectric film prevents hydrogen and water from being introduced into the ferroelectric film of the ferroelectric capacitor during and after the CVD process, thereby improving polarization, leakage current and dielectric breakdown characteristics of the ferroelectric capacitor.
Inventors
- 👤 Takeo Matsuki
- 👤 Jun Kawahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10B; H10B53/00; H10B53/30; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/69215; H10P14/6334
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
124 words
A method for manufacturing a nonvolatile semiconductor memory device comprising the steps in sequence of (a) forming a ferroelectric capacitor overlying a substrate and having a ferroelectric film between a top electrode and a bottom electrode of the ferroelectric capacitor, (b) forming a first dielectric film on the top electrode and directly in contact with said top electrode by sputtering or spin coating, (c) heat treating the device from step (b) to densify the first dielectric film, and (d) forming a second dielectric film made of silicon oxide on said first dielectric film by a chemical vapor deposition using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent while maintaining the substrate at a temperature of between 350° C. and 500° C.
Claim 2
Independent Claim
124 words
A method for manufacturing a nonvolatile semiconductor memory device comprising the steps in sequence of (a) forming a ferroelectric capacitor overlying a substrate and having a ferroelectric film between a top electrode and a bottom electrode of the ferroelectric capacitor, (b) forming a first dielectric film on the top electrode and directly in contact with said top electrode by sputtering or spin coating, (c) heat treating the device from step (b) to densify the first dielectric film, and (d) forming a second dielectric film made of silicon oxide on said first dielectric film by a chemical vapor deposition using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent while maintaining the substrate at a temperature of between 350° C. and 500° C.
Claim 3
Dependent Claim
25 words
A method for manufacturing a nonvolatile semiconductor memory device as defined in claim 1, wherein said first dielectric film is made of sputtered silicon oxide.
Claim 4
Dependent Claim
34 words
A method for manufacturing a nonvolatile semiconductor memory device as defined in claim 1 wherein said first dielectric film is made of spin on glass annealed at a temperature not lower than 600° C.
Claim 5
Dependent Claim
30 words
A method for manufacturing a nonvolatile semiconductor memory device as defined in claim 1 further comprising, after said forming step (d), the step (e) of heat treating said memory device.
Claim 6
Dependent Claim
30 words
A method for manufacturing an nonvolatile semiconductor memory device as defined in claim 4 wherein said heat treating step (e) is effected at a temperature not lower than 400° C.
Claim 7
Dependent Claim
51 words
A method for manufacturing a nonvolatile semiconductor memory device as defined in claim 1, wherein said heat treating step (c) comprises a first heat treatment in a nitrogen atmosphere at a first temperature, and a second heat treatment in an oxygen atmosphere at a second temperature higher than the first temperature.
Claim 8
Dependent Claim
32 words
A method for manufacturing a nonvolatile semiconductor memory device as defined in claim 6 wherein said first heat treatment temperature is 300° C., and said second heat treatment temperature is 600° C.
References Cited (Backward Citations)
US5119154A
Cited
US5506748A
Cited
US5496410A
Cited
US5688720A
Cited
JPH0750391A
Cited
EP0642167A2
Cited
JPH07263637A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-27 | 2003-03-29 | 2003-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-27 | 2007-03-29 | 2007-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-27 | 2011-03-29 | 2011-09-28 | $7700.00 | Window Closed / Lapsed |