US5955745A
Expired / Lapsed
US
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Semiconductor device having SiGe spacer under an active layer
Assignee: Renesas Electronics Corp
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Filing: 1996-09-19
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Granted: 1999-09-21
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Expires: 2016-09-19
Abstract
Abstract A semiconductor device which does not allow production of leak current or a drop of the Early voltage and includes a diffused layer having a reduced depth. A silicon layer containing an impurity of a second conduction type is formed on a semiconductor substrate of a first conduction type, and a spacer layer formed from a single crystalline silicon layer containing germanium is provided under the silicon layer.
Inventors
- 👤 Toru Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D10/00; H10D10/01; H10D10/021; H10D10/051; H10D10/054; H10D10/40; H10D10/421; H10D10/80; H10D10/821; H10D10/891; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0275; H10D30/0278; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D64/00; H10D64/01; H10D64/025
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
70 words
A semiconductor device comprising: a semiconductor substrate, a spacer layer formed from a single crystal silicon layer containing germanium, formed on said semiconductor layer; a single crystal silicon layer of a first conduction type, formed directly on said spacer layer, and semiconductor regions of a second conduction type of opposite type to the first conduction type, formed on opposite sides of the silicon layer and directly on said spacer layer.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising: a semiconductor substrate, a spacer layer formed from a single crystal silicon layer containing germanium, formed on said semiconductor layer; a single crystal silicon layer of a first conduction type, formed directly on said spacer layer, and semiconductor regions of a second conduction type of opposite type to the first conduction type, formed on opposite sides of the silicon layer and directly on said spacer layer.
Claim 3
Dependent Claim
50 words
A semiconductor device as claimed in claim 1, wherein the impurity concentration in the semiconductor regions of the second conduction type is higher than the impurity concentration in the single crystal silicon layer among the semiconductor regions, and the content of germanium in said spacer layer is 10% to 15%.
Claim 4
Dependent Claim
40 words
A semiconductor device as claimed in claim 2, wherein the semiconductor regions of the second conduction type constitute source and drain regions of a MOS transistor, and the single crystal silicon layer among the semiconductor regions constitutes a channel region.
Claim 5
Dependent Claim
41 words
A semiconductor device as claimed in claim 2, wherein the semiconductor regions of the second conduction type constitute an external base region of a bipolar transistor, and the single crystal silicon layer constitutes an intrinsic base region of a bipolar transistor.
Claim 6
Dependent Claim
39 words
A semiconductor device as claimed in claim 1, wherein the concentration distribution of germanium in said spacer layer is an inclined concentration distribution wherein the concentration is lower on the silicon layer side than on the semiconductor substrate side.
Claim 7
Dependent Claim
39 words
A semiconductor device as claimed in claim 5, wherein the semiconductor regions of the second conduction constitute source and drain regions of a MOS transistor, and the single crystal silicon layer among the semiconductor regions constitutes a channel region.
Claim 8
Dependent Claim
41 words
A semiconductor device as claimed in claim 5, wherein the semiconductor regions of the second conduction type constitute an external base region of a bipolar transistor, and the single crystal silicon layer constitutes an intrinsic base region of a bipolar transistor.
Claim 9
Dependent Claim
40 words
A semiconductor device as claimed in claim 1, wherein the semiconductor regions of the second conduction type constitute source and drain regions of a MOS transistor and the single crystal silicon layer among the semiconductor regions constitutes a channel region.
Claim 10
Dependent Claim
41 words
A semiconductor device as claimed in claim 1, wherein the semiconductor regions of the second conduction type constitute an external base region of a bipolar transistor, and the single crystal silicon layer constitutes an intrinsic base region of a bipolar transistor.
Claim 11
Dependent Claim
106 words
A semiconductor device comprising a semiconductor substrate of a first conduction type having a silicon layer containing an impurity of a second conduction type formed thereon, a spacer layer directly under said silicon layer and formed from a single crystal silicon layer containing germanium, wherein the concentration distribution of germanium in said spacer layer is in an inclined concentration distribution wherein the concentration is lower on the silicon layer side than on the semiconductor substrate side; and semiconductor regions of a second conduction type of opposite type to the first conduction type, formed on opposite sides of the silicon layer and directly on said spacer layer.
Claim 12
Dependent Claim
106 words
A semiconductor device comprising a semiconductor substrate of a first conduction type having a silicon layer containing an impurity of a second conduction type formed thereon, a spacer layer directly under said silicon layer and formed from a single crystal silicon layer containing germanium, wherein the concentration distribution of germanium in said spacer layer is in an inclined concentration distribution wherein the concentration is lower on the silicon layer side than on the semiconductor substrate side; and semiconductor regions of a second conduction type of opposite type to the first conduction type, formed on opposite sides of the silicon layer and directly on said spacer layer.
Claim 13
Dependent Claim
52 words
A semiconductor device as claimed in claim 10, wherein the concentration of the impurity of the second conduction type contained at least in part of said silicon layer is equal to or higher than 1×10 18 cm -3 , and the content of germanium in said spacer layer is 10% to 15%.
Claim 14
Dependent Claim
23 words
A semiconductor device as claimed in claim 11, wherein a source drain layer of a MOS transistor is formed in said silicon layer.
Claim 15
Dependent Claim
21 words
A semiconductor device as claimed in claim 11, wherein said silicon layer constitutes an active base layer of a bipolar transistor.
Claim 16
Dependent Claim
22 words
A semiconductor device as claimed in 10, wherein a source drain layer of a MOS transistor is formed in said silicon layer.
Claim 17
Dependent Claim
20 words
A semiconductor device as claimed in 10, wherein said silicon layer constitutes an active base layer of a bipolar transistor.
Claim 18
Dependent Claim
23 words
A semiconductor device as claimed in claim 10, wherein a source drain layer of a MOS transistor is formed in said silicon layer.
Claim 19
Dependent Claim
21 words
A semiconductor device as claimed in claim 10, wherein said silicon layer constitutes an active base layer of a bipolar transistor.
References Cited (Backward Citations)
US4825269A
Cited
JPH02191341A
Cited
US5633179A
Cited
US5821577A
Cited
US5285088A
Cited
US5352912A
Cited
US5461243A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-09-20 | 2003-03-22 | 2003-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-20 | 2007-03-22 | 2007-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-20 | 2011-03-22 | 2011-09-21 | $7700.00 | Window Closed / Lapsed |