US5953634A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1996-02-12
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Granted: 1999-09-14
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Expires: 2016-02-12
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of, forming a diffusion-preventing thin film on a substrate, performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the diffusion-preventing thin film thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition, performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition, and heat-treating the first and second conductive thin films at a temperature which is higher than those employed in the first and second vapor depositions.
Inventors
- 👤 Akihiro Kajita
- 👤 Hisashi Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/02; C23C16/0272; C23C16/06; C23C16/18; C23C16/4412; C23C16/448; C23C16/4481; C23C16/45512; C23C16/45523; H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/048; H10W20/056
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
197 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a substrate; forming a groove in the insulating layer; forming an intermediate thin film, which is either one of a diffusion preventing thin film or a glue thin film, on a surface of the insulating layer and on an inner surface of the groove; performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the intermediate thin film, thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition; performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas, thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition; and removing those portions of the intermediate thin film, the first conductive thin film and the second conductive thin film which are on the insulating layer except in the groove, thereby forming a wiring layer consisting essentially of the first conductive thin film and the second conductive thin film in the groove.
Claim 2
Independent Claim
197 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a substrate; forming a groove in the insulating layer; forming an intermediate thin film, which is either one of a diffusion preventing thin film or a glue thin film, on a surface of the insulating layer and on an inner surface of the groove; performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the intermediate thin film, thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition; performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas, thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition; and removing those portions of the intermediate thin film, the first conductive thin film and the second conductive thin film which are on the insulating layer except in the groove, thereby forming a wiring layer consisting essentially of the first conductive thin film and the second conductive thin film in the groove.
Claim 3
Dependent Claim
39 words
The method according to claim 1, wherein said intermediate thin film is selected from the group consisting of refractory metals; nitrides of refractory metals; silicides of refractory metals; and a ternary alloy comprising a refractory metal, Si and N.
Claim 4
Dependent Claim
22 words
The method according to claim 2, wherein said refractory metal is selected from the group consisting of Nb, Ta, Ti and W.
Claim 5
Dependent Claim
22 words
The method according to claim 1, wherein said oxidizing gas is selected from the group consisting of oxygen gas, ozone and water.
Claim 6
Dependent Claim
24 words
The method according to claim 1, wherein the temperature of the substrate at said first and second vapor depositions is 200° C. or lower.
Claim 7
Dependent Claim
26 words
The method according to claim 1, wherein said organic copper compound is of a molecular structure having Lewis base linked via oxygen atom to copper atom.
Claim 8
Dependent Claim
15 words
The method according to claim 6, wherein said organic copper compound is a β-diketonate compound.
Claim 9
Dependent Claim
21 words
The method according to claim 1, wherein said first conductive thin film has a film thickness of 100 to 500 angstroms.
Claim 10
Dependent Claim
35 words
The method according to claim 1, wherein the supply of oxidizing gas is controlled in such that the partial pressure ratio between the oxidizing gas and the copper source gas becomes not more than 2.
Claim 11
Dependent Claim
23 words
The method according to claim 1, wherein the concentration of oxygen in said first conductive thin film is 1 atomic % or less.
Claim 12
Independent Claim
148 words
A method of manufacturing a semiconductor device comprising the steps of; forming an intermediate thin film which is either one of a diffusion-preventing thin film or a glue thin film on a substrate; performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the intermediate thin film thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition; performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition; on said first conductive film and heat-treating said first and second conductive thin films at a temperature which is higher than those employed in said first and second vapor depositions.
Claim 13
Independent Claim
148 words
A method of manufacturing a semiconductor device comprising the steps of; forming an intermediate thin film which is either one of a diffusion-preventing thin film or a glue thin film on a substrate; performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the intermediate thin film thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition; performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition; on said first conductive film and heat-treating said first and second conductive thin films at a temperature which is higher than those employed in said first and second vapor depositions.
Claim 14
Dependent Claim
39 words
The method according to claim 11, wherein said intermediate thin film is selected from the group consisting of refractory metals; nitrides of refractory metals; silicides of refractory metals; and a ternary alloy comprising a refractory metal, Si and N.
Claim 15
Dependent Claim
21 words
The method according to claim 12, wherein said refractory metal is selected from the group consisting of Nb, Ta and W.
Claim 16
Dependent Claim
22 words
The method according to claim 11, wherein said oxidizing gas is selected from the group consisting of oxygen gas, ozone and water.
Claim 17
Dependent Claim
24 words
The method according to claim 11, wherein the temperature of the substrate at said first and second vapor depositions is 200° C. or lower.
Claim 18
Dependent Claim
26 words
The method according to claim 11, wherein said organic copper compound is of a molecular structure having Lewis base linked via oxygen atom to copper atom.
Claim 19
Dependent Claim
15 words
The method according to claim 16, wherein said organic copper compound is a β-diketonate compound.
Claim 20
Dependent Claim
21 words
The method according to claim 11, wherein said first conductive thin film has a film thickness of 100 to 500 angstroms.
Claim 21
Dependent Claim
28 words
The method according to claim 11, wherein the heat treatment temperature of said first and second conductive thin films are in the range of 300° C. or more.
Claim 22
Dependent Claim
25 words
The method according to claim 11, wherein the heat treatment temperature of said first and second conductive thin films are 300° C. to 500° C.
Claim 23
Dependent Claim
35 words
The method according to claim 11, wherein the supply of oxidizing gas is controlled in such that the partial pressure ratio between the oxidizing gas and the copper source gas becomes not more than 2.
Claim 24
Dependent Claim
23 words
The method according to claim 11, wherein the concentration of oxygen in said first conductive thin film is 1 atomic % or less.
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