US5527739A
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Process for fabricating a semiconductor device having an improved metal interconnect structure
Assignee: NXP USA Inc
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Filing: 1995-05-23
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Granted: 1996-06-18
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Expires: 2015-05-23
Abstract
Abstract A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via opening (22) in an insulating layer (20) overlying the first interconnect layer (16) and containing the via plug (28). The interface layers (24, 30) are subjected to an anneal to provide copper reservoirs (36, 37) in the interconnect layers (16, 32) adjacent to the interface layers (24, 30). The copper reservoirs (36, 37) continuously replenish copper depleted from the interface when an electric current is passed through the interconnect structure. A process includes the selective deposition of copper onto an exposed region (23) of the first metal interconnect layer (16), and onto the upper portion the via plug (28), followed by an anneal in forming gas to form the copper reservoirs (36, 37).
Inventors
- 👤 Louis C. Parrillo
- 👤 Jeffrey L. Klein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10S; Y10S438/00; Y10S438/927
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
67 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having a metal interconnect layer thereon, wherein the metal interconnect is an aluminum alloyed with at least copper; forming a copper layer to overlie the metal interconnect layer; forming a refractory metal overlying the copper layer; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region.
Claim 2
Dependent Claim
67 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having a metal interconnect layer thereon, wherein the metal interconnect is an aluminum alloyed with at least copper; forming a copper layer to overlie the metal interconnect layer; forming a refractory metal overlying the copper layer; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region.
Claim 3
Dependent Claim
17 words
The process of claim 1, wherein the step of diffusing comprises annealing the substrate in forming gas.
Claim 4
Dependent Claim
41 words
The process of claim 1 further comprising the step of forming an adhesion layer overlying the copper layer prior to forming the refractory metal layer, wherein the adhesion layer improves the adherence of the refractory metal layer to the copper layer.
Claim 5
Dependent Claim
20 words
The process of claim 1, wherein the step of forming a copper layer comprises selective chemical vapor deposition of copper.
Claim 6
Dependent Claim
34 words
The process of claim 1 further comprising the steps of: forming a second copper layer to overlie the refractory metal layer; and forming a second metal interconnect layer to overlie the second copper layer.
Claim 7
Dependent Claim
70 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; depositing a layer of aluminum-copper alloy on the semiconductor substrate and etching the layer to form a metal interconnect layer; forming a copper layer to overlie the metal interconnect layer; forming a refractory metal overlying the copper layer; and diffusing copper from the copper layer into the metal interconnect layer to form a copper-diffused region.
Claim 8
Dependent Claim
70 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; depositing a layer of aluminum-copper alloy on the semiconductor substrate and etching the layer to form a metal interconnect layer; forming a copper layer to overlie the metal interconnect layer; forming a refractory metal overlying the copper layer; and diffusing copper from the copper layer into the metal interconnect layer to form a copper-diffused region.
Claim 9
Dependent Claim
98 words
A process for forming a semiconductor device comprising the steps of: forming a first metal body selected from the group consisting of aluminum-copper, and aluminum-copper-silicon having grain boundaries therein; forming a second metal body; forming a copper layer intermediate to the first and second metal bodies; and passing an electric current through the first and second metal bodies, wherein the electric current induces copper from the copper layer to migrate into the first metal body to form a copper region in the first metal body, and wherein the copper region is in intimate contact with the copper layer.
Claim 10
Dependent Claim
98 words
A process for forming a semiconductor device comprising the steps of: forming a first metal body selected from the group consisting of aluminum-copper, and aluminum-copper-silicon having grain boundaries therein; forming a second metal body; forming a copper layer intermediate to the first and second metal bodies; and passing an electric current through the first and second metal bodies, wherein the electric current induces copper from the copper layer to migrate into the first metal body to form a copper region in the first metal body, and wherein the copper region is in intimate contact with the copper layer.
Claim 11
Dependent Claim
29 words
The process of claim 7 further comprising the step of diffusing copper from the copper region into a portion of the grain boundaries in proximity to the copper region.
Claim 12
Dependent Claim
19 words
The process of claim 7, wherein the step of forming a second metal body comprises depositing a refractory metal.
Claim 13
Dependent Claim
83 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having an insulating layer thereon, wherein the insulating layer has an opening, and wherein a refractory metal plug fills the opening; forming a copper layer overlying the metal plug; forming an aluminum metal interconnect overlying the insulating layer and the copper layer, wherein the aluminum is alloyed with at least copper; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region therein.
Claim 14
Dependent Claim
83 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having an insulating layer thereon, wherein the insulating layer has an opening, and wherein a refractory metal plug fills the opening; forming a copper layer overlying the metal plug; forming an aluminum metal interconnect overlying the insulating layer and the copper layer, wherein the aluminum is alloyed with at least copper; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region therein.
Claim 15
Dependent Claim
101 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having an insulating layer thereon, wherein the insulating layer has an opening, and wherein a refractory metal plug fills the opening; forming a copper layer overlying the metal plug; depositing an alloy of aluminum and copper, wherein the alloy has a copper concentration of less than 1 weight percent; etching the alloy of aluminum and copper to form a metal interconnect overlying the insulating layer and the copper layer; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region therein.
Claim 16
Dependent Claim
101 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate having an insulating layer thereon, wherein the insulating layer has an opening, and wherein a refractory metal plug fills the opening; forming a copper layer overlying the metal plug; depositing an alloy of aluminum and copper, wherein the alloy has a copper concentration of less than 1 weight percent; etching the alloy of aluminum and copper to form a metal interconnect overlying the insulating layer and the copper layer; and diffusing copper from the copper layer into the metal interconnect to form a copper-diffused region therein.
Claim 17
Dependent Claim
20 words
The process of claim 10, wherein the step of forming a copper layer comprises selective chemical vapor deposition of copper.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |