Patent US5945351A successfully refreshed from Google Patents.
US5945351A
Expired / Lapsed
US
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Method for etching damaged zones on an edge of a semiconductor substrate, and etching system
Assignee: Siemens AG
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Filing: 1997-06-02
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Granted: 1999-08-31
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Expires: 2017-06-02
Abstract
Abstract The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.
Inventors
- 👤 Josef Mathuni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:56
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/128; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; H01J37/32431; H01J37/32623; H01J37/32633; H01J37/32715; H01J37/32798; H01J37/32807; H01J37/32899; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0422; H10P72/0424; G; G03; G03F; G03F7/00; G03F7/16; G03F7/168
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
118 words
A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber; placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber such that a gap exists between the resist-free back side and the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber; and etching the substrate edge with an etching agent, and removing etching products and excess etching agent.
Claim 2
Independent Claim
118 words
A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber; placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber such that a gap exists between the resist-free back side and the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber; and etching the substrate edge with an etching agent, and removing etching products and excess etching agent.
Claim 3
Independent Claim
121 words
A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber; placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber; passing a protective gas over the front side and over the back side of the semiconductor substrate; and etching the substrate edge with an etching agent, and removing etching products and excess etching agent.
Claim 4
Independent Claim
121 words
A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber; placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber; passing a protective gas over the front side and over the back side of the semiconductor substrate; and etching the substrate edge with an etching agent, and removing etching products and excess etching agent.
Claim 5
Dependent Claim
16 words
The method according to claim 1, wherein the etching step comprises etching with an etchant gas.
Claim 6
Dependent Claim
14 words
The method according to claim 3, wherein the etchant gas is a gas mixture.
Claim 7
Dependent Claim
22 words
The method according to claim 3, which further comprises exciting the etchant gas to form a plasma, and evacuating the process chamber.
Claim 8
Dependent Claim
24 words
The method according to claim 5, wherein the exciting step comprises exciting the etchant gas with one of microwaves and high frequency electromagnetic waves.
Claim 9
Dependent Claim
24 words
The method according to claim 5, wherein the exciting step comprises generating the plasma in a plasma generating chamber separate from the process chamber.
Claim 10
Dependent Claim
18 words
The method according to claim 1, wherein the etching step comprises spraying etching solution onto the substrate edge.
Claim 11
Dependent Claim
27 words
The method according to claim 8, which further comprises heating at least one of the semiconductor substrate and the process chamber to a temperature of ≦100° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-30 | 2003-03-01 | 2003-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-30 | 2007-03-01 | 2007-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-30 | 2011-03-01 | 2011-08-31 | $7700.00 | Window Closed / Lapsed |