Process for plasma etching the backside of a semiconductor wafer, the front surface not being coated with a protective resin

Abstract

Abstract The etching process is used for selective removal of the vapour deposition layer applied to both surfaces of the semiconductor disc from the rear surface (2) of the disc. The etching is effected in a process chamber in which the semiconductor disc is supported, with a plasma generated in the part (6) of the chamber adjacent its rear surface. The penetration of the plasma to the front side of the semiconductor disc is prevented by a neutral gas supplied to the part (5) of the chamber adjacent its front surface, having a pressure at least equal to the pressure on the rear side of the disc. The 2 parts of the process chamber may be sealed from one another by a seal around the peripheral edge of the semiconductor disc.

Inventors

• 👤 Josef Dr. Dipl.-Phys. Mathuni

Bibliographic Details