Fabrication of a gate electrode stack using a patterned oxide layer

Claim 2

A process of forming a semiconductor device, comprising: forming an oxide layer over a surface of a substrate; forming at least one opening in the oxide layer; forming a high permittivity plug in a lower portion of the opening; forming a conductive plug in an upper portion of the opening over the high permittivity plug; and removing the oxide layer, wherein the high permittivity plug and the conductive plug are formed in contact with sidewalls of the oxide layer defining the opening.

Claim 3

The process of claim 1, wherein the oxide layer is formed by deposition.

Claim 4

The process of claim 1, wherein forming the at least one opening includes masking and etching a portion of the oxide layer.

Claim 5

The process of claim 1, wherein the oxide layer has a thickness ranging from 300 to 500 angstroms.

Claim 6

The process of claim 1, wherein the oxide layer opening has a width ranging from 0.15 to 0.25 microns or less.

Claim 7

A process of forming a semiconductor device, comprising: forming an oxide layer over a surface of a substrate; forming at least one opening in the oxide layer; forming a high permittivity plug in a lower portion of the opening; forming a conductive plug in an upper portion of the opening over the high permittivity plug; and removing the oxide layer; wherein forming the high permittivity plug in the opening includes: forming a high permittivity layer over the oxide layer; and overpolishing the high permittivity layer to form the high permittivity plug in the opening.

Claim 8

A process of forming a semiconductor device, comprising: forming an oxide layer over a surface of a substrate; forming at least one opening in the oxide layer; forming a high permittivity plug in a lower portion of the opening; forming a conductive plug in an upper portion of the opening over the high permittivity plug; and removing the oxide layer; wherein forming the high permittivity plug in the opening includes: forming a high permittivity layer over the oxide layer; and overpolishing the high permittivity layer to form the high permittivity plug in the opening.

Claim 9

The process of claim 1, wherein forming the high permittivity plug in the opening includes: forming a high permittivity layer over the oxide layer; polishing the high permittivity layer to remove portions of the high permittivity layer over the oxide layer and leave a remaining portion of the high permittivity layer in the opening; and etching the remaining portion of the high permittivity layer to form the high permittivity plug in the opening.

Claim 10

The process of claim 1, wherein forming the high permittivity plug in the opening includes: forming a relatively planar high permittivity layer over the oxide layer; and etching the planar high permittivity layer to remove portions of the high permittivity layer over the oxide layer and leave a remaining portion of the high permittivity layer in the opening, the remaining portion of the high permittivity layer forming the high permittivity plug.

Claim 11

The process of claim 1, wherein forming the opening includes exposing an active region of the substrate.

Claim 12

The process of claim 1, wherein forming the conductive plug includes: forming a conductive layer over the oxide layer and high permittivity plug; and removing portions of the conductive layer over the oxide layer to leave a remaining portion of the conductive layer in the upper portion of the opening, the remaining portion of the conductive layer forming the conductive plug.

Claim 13

The process of claim 10, wherein removing portions of the conductive layer includes polishing the conductive layer.

Claim 14

The process of claim 10, wherein the remaining portion of the conductive layer is planarized with respect to an upper surface of the oxide layer.

Claim 15

The process of claim 1, wherein the conductive plug is formed from a metal silicide.

Claim 16

The process of claim 1, wherein the conductive plug is formed from polysilicon.

Claim 17

The process of claim 1, wherein the conductive plug is used as a gate electrode and the high permittivity plug is used as a gate insulating layer.

Claim 18

A process of fabricating a semiconductor device, comprising: forming an oxide layer over a surface of a substrate; masking and etching the oxide layer to form a patterned oxide layer having at least one opening therein; depositing a BST oxide layer over the patterned oxide layer to fill at least a portion of the opening; removing portions of the BST oxide layer to leave a remaining portion forming a recess within the opening; depositing a metal silicide layer over the patterned oxide layer and the remaining portion of the BST oxide layer, the metal silicide layer filling the recess within the opening; removing portions of the metal silicide layer over the oxide layer to planarize a remaining portion of the metal silicide layer with an upper surface of the oxide layer; and removing the patterned oxide layer; wherein the remaining portion of the BST oxide layer forms a gate insulating layer and the remaining portion of the metal silicide layer forms a gate electrode; wherein the remaining portion of BST oxide layer and the remaining portion of the metal silicide layer are in contact with sidewalls of the patterned oxide layer defining the opening.

Claim 19

A process of fabricating a semiconductor device, comprising: forming an oxide layer over a surface of a substrate; masking and etching the oxide layer to form a patterned oxide layer having at least one opening therein; depositing a BST oxide layer over the patterned oxide layer to fill at least a portion of the opening; removing portions of the BST oxide layer to leave a remaining portion forming a recess within the opening; depositing a metal silicide layer over the patterned oxide layer and the remaining portion of the BST oxide layer, the metal silicide layer filling the recess within the opening; removing portions of the metal silicide layer over the oxide layer to planarize a remaining portion of the metal silicide layer with an upper surface of the oxide layer; and removing the patterned oxide layer; wherein the remaining portion of the BST oxide layer forms a gate insulating layer and the remaining portion of the metal silicide layer forms a gate electrode; wherein the remaining portion of BST oxide layer and the remaining portion of the metal silicide layer are in contact with sidewalls of the patterned oxide layer defining the opening.

Claim 20

The process of claim 1, wherein removing the oxide layer includes exposing sidewalls of the high permittivity plug and the conductive plug while leaving the exposed plugs intact.

Claim 21

The process of claim 17, further including forming spacers on the exposed sidewalls of the high permittivity plug and the conductive plug.

Claim 22

The process of claim 1, wherein removing the patterned oxide layer includes exposing sidewalls of the remaining portion of the BST oxide layer and the remaining portion of the metal silicide layer while leaving the exposed layers intact.

Claim 23

The process of claim 19, further including forming spacers on the exposed sidewalls of the remaining portion of the BST oxide layer and the remaining portion of the metal silicide layer.

Claim 24

The process of claim 16, wherein removing portions of the BST oxide layer includes overpolishing the BST oxide layer to leave the remaining portion of the BST oxide layer recessed with respect to an upper surface of the patterned oxide layer.

Claim 25

The process of claim 16, wherein removing portions of the BST oxide layer includes polishing the BST oxide layer to remove portions of the BST oxide layer deposited over the patterned oxide layer and, after polishing, etching the BST oxide layer to leave the remaining portion.

Claim 26

The process of claim 16, wherein depositing the BST oxide layer includes depositing the BST oxide layer to a thickness which provides a substantially planar upper surface and wherein removing portions of the BST oxide layer includes etching the relatively planar BST oxide layer to remove portions of the BST oxide layer over the patterned oxide layer and leave the remaining portion recessed within the opening.

Claim 27

A process of fabricating a semiconductor device, comprising: forming, over a substrate, a patterned oxide layer defining at least one opening; depositing a high permittivity layer, having a permittivity greater than silicon dioxide, over the patterned oxide layer to fill at least a portion of the opening, the deposited high permittivity layer being in contact with sidewalls of the opening; removing portions of the high permittivity layer to leave a remaining portion in contact with sidewalls of the opening and recessed with respect to an upper surface of the patterned oxide layer; depositing a metal silicide layer over the patterned oxide layer and the remaining portion of the high permittivity layer, the metal silicide layer being in contact with sidewalls of the opening and filling the recess within the opening; removing portions of the metal silicide layer over the oxide layer to leave a remaining portion of the metal silicide layer within the opening over the remaining portion of the high permittivity layer and in contact with sidewalls of the opening; removing the patterned oxide layer to expose sidewalls of, while leaving intact, the remaining portion of the high permittivity layer and the remaining portion of the metal silicide layer; forming spacers on the exposed sidewalls of the remaining portions of the high permittivity layer and the metal silicide layer; and forming active regions adjacent the remaining portions of the high permittivity layer and the metal silicide layer.

Claim 28

A process of fabricating a semiconductor device, comprising: forming, over a substrate, a patterned oxide layer defining at least one opening; depositing a high permittivity layer, having a permittivity greater than silicon dioxide, over the patterned oxide layer to fill at least a portion of the opening, the deposited high permittivity layer being in contact with sidewalls of the opening; removing portions of the high permittivity layer to leave a remaining portion in contact with sidewalls of the opening and recessed with respect to an upper surface of the patterned oxide layer; depositing a metal silicide layer over the patterned oxide layer and the remaining portion of the high permittivity layer, the metal silicide layer being in contact with sidewalls of the opening and filling the recess within the opening; removing portions of the metal silicide layer over the oxide layer to leave a remaining portion of the metal silicide layer within the opening over the remaining portion of the high permittivity layer and in contact with sidewalls of the opening; removing the patterned oxide layer to expose sidewalls of, while leaving intact, the remaining portion of the high permittivity layer and the remaining portion of the metal silicide layer; forming spacers on the exposed sidewalls of the remaining portions of the high permittivity layer and the metal silicide layer; and forming active regions adjacent the remaining portions of the high permittivity layer and the metal silicide layer.