Patent US5796586A successfully refreshed from Google Patents.
US5935451A
Expired / Lapsed
US
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Fabrication of etched features
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1997-02-24
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Granted: 1999-08-10
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Expires: 2017-02-24
Abstract
Abstract Disclosed is a method of fabricating electronic components on a semiconductor substrate by etching features in the substrate through a mask including apertures which are separated by a prescribed spacing. Etching is continued until the etched features merge into a single channel. This technique can be used to form channels having nonuniform shapes, or could be used to monitor the end point of an etching operation.
Inventors
- 👤 Mindaugas Fernand Dautartas
- 👤 Yiu-Huen Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 00:46
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; G; G02; G02B; G02B6/00; G02B6/24; G02B6/36; G02B6/3628; G02B6/3684; G02B6/3692; G02B6/3632; G02B6/3636; G02B6/3648; G02B6/3652; G02B6/42; G02B6/4201; G02B6/4204
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
84 words
A method of fabricating an electronic component on a semiconductor substrate comprising the steps of: etching a channel having relatively wider and narrower ends in the substrate with a single mask, said mask containing at least two apertures with a spacing therebetween, one aperture being relatively wider than the other, the etching initially forming separate etched features in the substrate under each aperture; and continuing the etching at least until the two etched features merge into one channel having relatively wider and narrower ends.
Claim 2
Independent Claim
84 words
A method of fabricating an electronic component on a semiconductor substrate comprising the steps of: etching a channel having relatively wider and narrower ends in the substrate with a single mask, said mask containing at least two apertures with a spacing therebetween, one aperture being relatively wider than the other, the etching initially forming separate etched features in the substrate under each aperture; and continuing the etching at least until the two etched features merge into one channel having relatively wider and narrower ends.
Claim 3
Dependent Claim
11 words
The method according to claim 1 wherein the substrate comprises silicon.
Claim 4
Dependent Claim
19 words
The method according to claim 2 wherein the silicon has a major surface lying in the 100 crystallographic plane.
Claim 5
Dependent Claim
13 words
The method according to claim 1 wherein the mask comprises a photoresist material.
Claim 6
Dependent Claim
11 words
The method according to claim 1 wherein the apertures are rectangular.
Claim 7
Dependent Claim
13 words
The method according to claim 1 wherein the component is an optical subassembly.
Claim 8
Dependent Claim
27 words
The method according to claim 1 wherein the wider end of the channel has a width which is at least twice as great as the narrower end.
Claim 9
Dependent Claim
20 words
The method according to claim 1 wherein a tapered transition region is formed between the relatively wider and narrower ends.
Claim 10
Dependent Claim
15 words
The method according to claim 8 wherein the transition region includes a sloped bottom surface.
Claim 11
Independent Claim
77 words
A method of fabricating an electronic component on a semiconductor substrate comprising the steps of: etching at least a portion of the substrate through a mask containing at least two apertures with a spacing therebetween to initially form separate etched features in the substrate under each aperture; visually inspecting the etched features as the etching proceeds through said mask, and terminating the etching through said mask when at least the two features merge into a single channel.
Claim 12
Independent Claim
77 words
A method of fabricating an electronic component on a semiconductor substrate comprising the steps of: etching at least a portion of the substrate through a mask containing at least two apertures with a spacing therebetween to initially form separate etched features in the substrate under each aperture; visually inspecting the etched features as the etching proceeds through said mask, and terminating the etching through said mask when at least the two features merge into a single channel.
Claim 13
Dependent Claim
20 words
The method according to claim 10 wherein the substrate is silicon having a major surface in the 100 crystallographic plane.
Claim 14
Dependent Claim
13 words
The method according to claim 10 wherein the mask comprises a photoresist material.
Claim 15
Dependent Claim
11 words
The method according to claim 10 wherein the apertures are rectangular.
Claim 16
Dependent Claim
15 words
The method according to claim 10 wherein the mask includes a row of such apertures.
Claim 17
Dependent Claim
21 words
The method according to claim 1 wherein the etching until the two etched features merge is done by a single etchant.
Claim 18
Dependent Claim
20 words
The method according to claim 10 wherein the etching until the two features merge is done by a single etchant.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |