Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A high-voltage transistor comprising: a drain region and a source region being separated by a drift region; a gate electrode being parallel to and separated from said drift region by an insulating layer, said gate electrode partially covering said drift region; and a capacitive divider network, located proximate to and spaced apart from said drift region; and a high voltage electrode, connected to said drain region, extending over said drain region, said source region, said gate electrode, and said capacitive divider network.
Claim 2
Dependent Claim
82 words
A high-voltage transistor comprising: a drain region and a source region being separated by a drift region; a gate electrode being parallel to and separated from said drift region by an insulating layer, said gate electrode partially covering said drift region; and a capacitive divider network, located proximate to and spaced apart from said drift region; and a high voltage electrode, connected to said drain region, extending over said drain region, said source region, said gate electrode, and said capacitive divider network.
Claim 3
Dependent Claim
111 words
The transistor of claim 1 wherein said capacitive divider network further comprises: a plurality of first conductive elements, spaced apart from said high voltage electrode by a n insulating layer , for accumulating charge from said high voltage electrode; a plurality of second conductive elements, spaced apart from said plurality of first conductive elements by an insulating layer, for accumulating charge coupled from said plurality of first conductive elements; and said drift region, parallel to and spaced apart from said plurality of second conductive elements by an insulating layer, such that the charge accumulated upon said plurality of second conductive elements produces a substantially uniform electric field within said drift region.
Claim 4
Dependent Claim
31 words
The transistor of claim 2 wherein each of said first conductive elements partially overlap at least one of said plurality of second conductive elements in said plurality of second conductive elements.
Claim 5
Dependent Claim
90 words
A high-voltage transistor comprising: an insulative substrate; a drain region and a source region being separated by a drift region located atop said insulative substrate; a gate electrode being parallel to and separated from said drift region by an insulating layer, said gate electrode partially covering said drift region; and a capacitive divider network, located proximate to and spaced apart from said drift region; and a high voltage electrode, connected to said drain region, extending over said drain region, said source region, said gate electrode, and said capacitive divider network.
Claim 6
Dependent Claim
90 words
A high-voltage transistor comprising: an insulative substrate; a drain region and a source region being separated by a drift region located atop said insulative substrate; a gate electrode being parallel to and separated from said drift region by an insulating layer, said gate electrode partially covering said drift region; and a capacitive divider network, located proximate to and spaced apart from said drift region; and a high voltage electrode, connected to said drain region, extending over said drain region, said source region, said gate electrode, and said capacitive divider network.
Claim 7
Dependent Claim
113 words
The transistor of claim 4 wherein said capacitive divider network further comprises: a high voltage electrode; a plurality of first conductive elements, spaced apart from said high voltage electrode by an insulating layer, for accumulating charge from said high voltage electrode; a plurality of second conductive elements, spaced apart from said plurality of first conductive elements by an insulating layer, for accumulating charge coupled from said plurality of first conductive elements; and said drift region, parallel to and spaced apart from said plurality of second conductive elements by an insulating layer, such that the charge accumulated upon said plurality of second conductive elements produces a substantially uniform electric field within said drift region.
Claim 8
Dependent Claim
31 words
The transistor of claim 5 wherein each of said first conductive elements partially overlap at least one of said plurality of second conductive elements in said plurality of second conductive elements.