High voltage MOS field effect semiconductor device

Claim 2

A high voltage MOS field-effect semiconductor device, comprising: a semiconductor substrate; a high voltage MOS field-effect transistor formed on the substrate and operable for switching a relatively high voltage applied thereto, said high voltage transistor comprising a source electrode, a drain electrode and a region of high resistance layer between said source and drain electrodes; a circuit including a low voltage MOS field-effect transistor formed of a plurality of electrically conductive and electrically insulating layers predeterminately stacked on said substrate for driving said high voltage MOS field-effect transistor; electromagnetic shielding means comprising an electrically conductive layer overlying substantially the entirety of said circuit and entirely separated and spaced from said substrate by at least some of said plural stacked layers for screening said low voltage circuit portion from electromagnetic radiation from said high voltage transistor on the substrate and preventing electrical interference with said overlaid circuit by the electromagnetic field effects of the relatively high voltage operatively applied to said high voltage transistor; an insulating layer interposed between said circuit and said electronically conductive layers of said shielding means; said semiconductor device having an upper surface comprising a protective film; a first conductive field plate extending from said source electrode, said first field plate being connected to said shielding means; and a second conductive field plate extending from said drain electrode, said first and second field plates being disposed in overlying relation to said region of high resistance layer.

Claim 3

A device as defined in claim 1 wherein the semiconductor substrate has the high voltage MOS field-effect transistor disposed at a peripheral portion thereof and the low voltage MOS field-effect transistor disposed centrally thereof.

Claim 4

A device as defined in claim 1 wherein the high voltage MOS field-effect transistor has a plurality of floating conductors.

Claim 5

A device as defined in claim 1 wherein the conductor layer is formed of aluminum containing about 1% of silicon.

Claim 6

A device as defined in claim 1 wherein the conductor layer is connected to a source of the high voltage MOS field-effect transistor, the semiconductor substrate or a power supply of the low voltage MOS field-effect transistor.

Claim 7

A device as defined in claim 1 wherein the conductor layer is divided into a plurality of segments which are connected to a source of the high voltage MOS field-effect transistor, the semiconductor substrate or a power supply of the low voltage MOS field-effect transistor.

Claim 8

A device as defined in claim 2 wherein the high voltage MOS field-effect transistor has a plurality of floating conductors.

Claim 9

A device as defined in claim 2 wherein the conductor layer is connected to a source of the high voltage MOS field-effect transistor, the semiconductor substrate or a power supply of the low voltage MOS field-effect transistor.

Claim 10

A device as defined in claim 2 wherein the conductor layer is divided into a plurality of segments which are connected to a source of the high voltage MOS field-effect transistor, the semiconductor substrate or a power supply of the low voltage MOS field-effect transistor.

Claim 11

A high voltage MOS field-effect semiconductor device, comprising: a semiconductor substrate; a high voltage MOS field-effect transistor formed at a peripheral portion on said substrate and operable for switching a relatively high voltage applied thereto, said high voltage transistor comprising a source electrode, a drain electrode and a region of high resistance layer between said source and drain electrodes; a circuit including a low voltage MOS field-effect transistor formed at a central portion on said substrate and at least partly surrounded by said high voltage MOS field-effect transistor for driving said high voltage transistor; and electromagnetic shielding means comprising a plurality of electrically conductive layers overlying said circuit and electrically connected to a constant electric potential for screening said low voltage circuit portion from electromagnetic radiation from said high voltage transistor on the substrate and preventing electrical interference with said overlaid circuit by the electromagnetic field effects of the relatively high voltage operatively applied to said high voltage transistor; an insulating layer interposed between said circuit and said electrically conductive layers of said shielding means; said semiconductor device having an upper surface comprising a protective film; a first conductive field plate extending from said source electrode, said first field plate being connected to said shielding means; and a second conductive field plate extending from said drain electrode, said first and second field plates being disposed in overlying relation to said region of high resistance layer.

Claim 12

A high voltage MOS field-effect semiconductor device, comprising: a semiconductor substrate; a high voltage MOS field-effect transistor formed at a peripheral portion on said substrate and operable for switching a relatively high voltage applied thereto, said high voltage transistor comprising a source electrode, a drain electrode and a region of high resistance layer between said source and drain electrodes; a circuit including a low voltage MOS field-effect transistor formed at a central portion on said substrate and at least partly surrounded by said high voltage MOS field-effect transistor for driving said high voltage transistor; and electromagnetic shielding means comprising a plurality of electrically conductive layers overlying said circuit and electrically connected to a constant electric potential for screening said low voltage circuit portion from electromagnetic radiation from said high voltage transistor on the substrate and preventing electrical interference with said overlaid circuit by the electromagnetic field effects of the relatively high voltage operatively applied to said high voltage transistor; an insulating layer interposed between said circuit and said electrically conductive layers of said shielding means; said semiconductor device having an upper surface comprising a protective film; a first conductive field plate extending from said source electrode, said first field plate being connected to said shielding means; and a second conductive field plate extending from said drain electrode, said first and second field plates being disposed in overlying relation to said region of high resistance layer.

Claim 13

A high voltage MOS field-effect semiconductor device, comprising; a semiconductor substrate; a first circuit including high voltage MOS field-effect transistors integrally formed at a peripheral portion on said substrate and operable for switching a relatively high voltage applied thereto, each of said high voltage transistors comprising a source electrode, a drain electrode and a region of high resistance layer between said source and drain electrodes; a second circuit including low voltage MOS field-effect transistors integrally formed at a central portion on said substrate and at least partly surrounded by said first circuit; electromagnetic shielding means comprising a plurality of electrically conductive layers overlying substantially the entirety of said central portion having said second circuit and electrically connected to a constant electric potential for screening said second circuit from electromagnetic radiation from said high voltage transistors of said first circuit on the substrate and preventing electrical interference with said overlaid second circuit by the electromagnetic field effects of the relatively high voltage operatively applied to said high voltage transistors; an insulating layer interposed between said circuit and said electrically conductive layers of said shielding means; said semiconductor device having an upper surface comprising a protective film; a first conductive field plate extending from said source electrode, said first field plate being connected to said shielding means; and a second conductive field plate extending from said drain electrode, said first and second field plates being disposed in overlying relation to said region of high resistance layer.

Claim 14

A high voltage MOS field-effect semiconductor device, comprising; a semiconductor substrate; a first circuit including high voltage MOS field-effect transistors integrally formed at a peripheral portion on said substrate and operable for switching a relatively high voltage applied thereto, each of said high voltage transistors comprising a source electrode, a drain electrode and a region of high resistance layer between said source and drain electrodes; a second circuit including low voltage MOS field-effect transistors integrally formed at a central portion on said substrate and at least partly surrounded by said first circuit; electromagnetic shielding means comprising a plurality of electrically conductive layers overlying substantially the entirety of said central portion having said second circuit and electrically connected to a constant electric potential for screening said second circuit from electromagnetic radiation from said high voltage transistors of said first circuit on the substrate and preventing electrical interference with said overlaid second circuit by the electromagnetic field effects of the relatively high voltage operatively applied to said high voltage transistors; an insulating layer interposed between said circuit and said electrically conductive layers of said shielding means; said semiconductor device having an upper surface comprising a protective film; a first conductive field plate extending from said source electrode, said first field plate being connected to said shielding means; and a second conductive field plate extending from said drain electrode, said first and second field plates being disposed in overlying relation to said region of high resistance layer.

Claim 15

A device in accordance with claim 11, wherein said conductive layers are comprised of metal and are deposited by vacuum evaporation over said insulating layer.

Claim 16

A device in accordance with claim 11, wherein said conductive layers are formed of aluminum containing about 1% of silicon.

Claim 17

A device in accordance with claim 11 wherein each said high voltage MOS field-effect transistor has a plurality of floating third conductors.