Patent US5932286A successfully refreshed from Google Patents.
US5932286A
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US
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Deposition of silicon nitride thin films
Assignee: Applied Materials Inc
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Filing: 1993-03-16
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Granted: 1999-08-03
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Expires: 2013-03-16
Abstract
Abstract Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.
Inventors
- 👤 Israel Beinglass
- 👤 Mahalingam Venkatesan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
86 words
A method of depositing films of silicon nitride onto a single substrate in a low pressure chemical vapor deposition chamber comprising a) supporting a single substrate in said chamber; b) adjusting the pressure to from about 5 to about 100 Torr and heating the substrate to a temperature of from about 650 to about 850° C.; and c) passing a precursor gas mixture comprising a silane gas and ammonia into said chamber, thereby depositing a film of stoichiometric silicon nitride of uniform thickness onto said substrate.
Claim 2
Independent Claim
86 words
A method of depositing films of silicon nitride onto a single substrate in a low pressure chemical vapor deposition chamber comprising a) supporting a single substrate in said chamber; b) adjusting the pressure to from about 5 to about 100 Torr and heating the substrate to a temperature of from about 650 to about 850° C.; and c) passing a precursor gas mixture comprising a silane gas and ammonia into said chamber, thereby depositing a film of stoichiometric silicon nitride of uniform thickness onto said substrate.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein said pressure is about 25 Torr.
Claim 4
Dependent Claim
15 words
A method according to claim 1 wherein said gas mixture further includes a carrier gas.
Claim 5
Dependent Claim
22 words
A method according to claim 3 wherein said carrier gas is selected from the group consisting of hydrogen, nitrogen, argon and helium.
Claim 6
Dependent Claim
20 words
A method according to claim 1 wherein said silane is selected from the group consisting of silane, disilane and dichlorosilane.
Claim 7
Dependent Claim
27 words
A method according to claim 5 wherein said gas mixture comprises about 230 sccm of dichlorosilane, about 1000 sccm of ammonia and about 9000 sccm of hydrogen.
Claim 8
Dependent Claim
26 words
A method according to claim 1 wherein said deposition is continued until a silicon nitride film of at least 100 angstroms in thickness has been deposited.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |