US5930619A
Expired / Lapsed
US
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Method of making trench EPROM simultaneously with forming a DRAM cell
Assignee: International Business Machines Corp
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Filing: 1996-02-08
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Granted: 1999-07-27
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Expires: 2016-02-08
Abstract
Abstract A two-device nonvolatile memory cell is described. The cell comprises a planar FET and a vertical FET in series. The vertical FET has a floating gate that is predominantly capacitively coupled to a buried n well that serves as the control electrode. The structure is very similar to a trench DRAM cell, and the nonvolatile memory cell can be integrated onto a DRAM chip.
Inventors
- 👤 Wendell Phillips Noble
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:33
CPC Classifications
H; H10; H10B; H10B69/00; G; G11; G11C; G11C11/00; G11C11/005; G11C16/00; G11C16/02; G11C16/04; G11C16/0408
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
126 words
A method of forming a semiconductor structure comprising the steps of: a) providing a semiconductor substrate having a planar surface and a first substrate region; b) forming a first FET having a first gate adjacent a first gate insulator adjacent a first channel in said first substrate region and a first and a second diffused region on opposite sides of said first channel; and c) forming a second FET connected in series with said first FET, said second FET having a second gate adjacent a second gate insulator adjacent a second channel in said first substrate region, said second gate floating and not connected to said first gate, said second gate predominantly capacitively coupled to a control electrode, said control electrode being a third diffused region.
Claim 2
Independent Claim
126 words
A method of forming a semiconductor structure comprising the steps of: a) providing a semiconductor substrate having a planar surface and a first substrate region; b) forming a first FET having a first gate adjacent a first gate insulator adjacent a first channel in said first substrate region and a first and a second diffused region on opposite sides of said first channel; and c) forming a second FET connected in series with said first FET, said second FET having a second gate adjacent a second gate insulator adjacent a second channel in said first substrate region, said second gate floating and not connected to said first gate, said second gate predominantly capacitively coupled to a control electrode, said control electrode being a third diffused region.
Claim 3
Dependent Claim
55 words
A method as recited in claim 1, further comprising in said steps (b) and (c) the steps of forming said second diffused region in said substrate region adjacent said first gate and adjacent said second gate, and further comprising in said step (c) the step of forming a third diffused region adjacent said second gate.
Claim 4
Dependent Claim
73 words
A method as recited in claim 2, further comprising in said step (c) the step of forming a trench having a sidewall intersecting said surface and said second diffused region, and wherein said step of forming said third diffused region comprises the step of forming a buried plate, and wherein said second gate insulator and said second gate forming steps comprise forming said second gate insulator and said second gate along said sidewall.
Claim 5
Dependent Claim
32 words
A method as recited in claim 3, wherein said third diffused region forming step and said second gate insulator forming step provides said second gate predominantly capacitively coupled to said third diffusion.
Claim 6
Dependent Claim
29 words
A method as recited in claim 4, further comprising the step of forming a wordline connected to said first gate and a bitline connected to said first diffused region.
Claim 7
Independent Claim
69 words
A method of forming a chip comprising the steps of forming a non-volatile memory cell simultaneously with forming a DRAM cell wherein said steps of forming said non-volatile memory cell comprise the steps of forming a vertical transistor having a vertical floating gate and a buried diffusion surrounding said floating gate, said buried diffusion serving as a control electrode, said floating gate capacitively coupled predominantly to said buried diffusion.
Claim 8
Independent Claim
69 words
A method of forming a chip comprising the steps of forming a non-volatile memory cell simultaneously with forming a DRAM cell wherein said steps of forming said non-volatile memory cell comprise the steps of forming a vertical transistor having a vertical floating gate and a buried diffusion surrounding said floating gate, said buried diffusion serving as a control electrode, said floating gate capacitively coupled predominantly to said buried diffusion.
Claim 9
Dependent Claim
100 words
A method as recited in claim 6, wherein said buried diffused region and said vertical floating gate are located in a first substrate region of a semiconductor substrate, and further wherein said buried diffused region is adjacent said vertical floating gate, said method further comprising the steps of forming a first FET having a first gate adjacent a first gate insulator adjacent a first channel in said first substrate region and a first and a second diffused region on opposite sides of said first channel adjacent said first gate, wherein said second diffused region is also adjacent said floating gate.
Claim 10
Dependent Claim
38 words
A method as recited in claim 7, wherein said vertical floating gate forming step comprises the steps of forming a trench having a sidewall, and forming a floating gate insulator and a floating gate conductor along said sidewall.
Claim 11
Dependent Claim
31 words
A method as recited in claim 8, wherein said buried diffused region forming step and said floating gate insulator forming step provides said floating predominantly capacitively coupled to said buried diffusion.
Claim 12
Dependent Claim
29 words
A method as recited in claim 9, further comprising the steps of forming a wordline connected to said first gate and a bitline connected to said first diffused region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-26 | 2003-01-25 | 2003-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-26 | 2007-01-25 | 2007-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-26 | 2011-01-25 | 2011-07-27 | $7700.00 | Window Closed / Lapsed |