Patent US5923084A successfully refreshed from Google Patents.
US5923084A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for heat discharge
Assignee: Seiko Epson Corp
•
Filing: 1996-06-05
•
Granted: 1999-07-13
•
Expires: 2016-06-05
Abstract
Abstract A semiconductor device comprising a low-heat-resistance heat discharging route suitable for small semiconductor devices, such as an IC card, is disclosed. Heat arising from electronic parts is efficiently dispersed to the outside, thereby accomplishing a decrease in size and a heightening of function. In a specific embodiment, a CPU is mounted on a substrate in a position of thermal via holes. A high-heat-conducting material such as semifluid silicone rubber is placed between a CPU mounting face of the substrate and lower panel located on the opposite side of the substrate. The high-heat-conducting material is a filler having the ability to change shape and the property of electrical nonconductivity. A greater part of the heat arising from the CPU is transmitted through the thermal via holes from the CPU mounting face of the substrate to the opposite side, and further to the high-heat-conducting material which conveys the heat to the lower panel. The heat is dispersed from the lower panel surface directly into the atmosphere.
Inventors
- 👤 Kazuaki Inoue
- 👤 Hiroyuki Yamashita
- 👤 Norio Nakamura
- 👤 Hiroyuki Yoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:27
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H10W40/70; H05; H05K; H05K1/00; H05K1/02; H05K1/0201; H05K1/0203; H05K1/0204; H05K1/0206; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/541; H10W72/5445; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
138 words
A semiconductor device, comprising; a substrate including a plurality of layers, an inner portion having at least one inner layer, a concave area exposing an inner ground layer of the substrate, a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the inner ground layer of the substrate, the thermal via holes intersecting a conductor pattern of at least one layer of the substrate; an electronic component mounted over the thermal via holes on the first side of the substrate; a bonding agent attaching the electronic component to a surface of the inner ground layer; a heat discharging element disposed on the second side of the substrate; and a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.
Claim 2
Dependent Claim
138 words
A semiconductor device, comprising; a substrate including a plurality of layers, an inner portion having at least one inner layer, a concave area exposing an inner ground layer of the substrate, a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the inner ground layer of the substrate, the thermal via holes intersecting a conductor pattern of at least one layer of the substrate; an electronic component mounted over the thermal via holes on the first side of the substrate; a bonding agent attaching the electronic component to a surface of the inner ground layer; a heat discharging element disposed on the second side of the substrate; and a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.
Claim 3
Dependent Claim
24 words
The semiconductor device of claim 1, wherein the electronic component comprises a semiconductor chip that is surface-mounted on the substrate using a bonding agent.
Claim 4
Dependent Claim
16 words
The semiconductor device of claim 1, wherein the high heat conductive material is an electrical insulator.
Claim 5
Dependent Claim
17 words
The semiconductor device of claim 3, wherein the high heat conductive material comprises a semi-fluid silicone rubber.
Claim 6
Dependent Claim
20 words
The semiconductor device of claim 1, wherein the high heat conductive material is formed in the shape of a sheet.
Claim 7
Dependent Claim
21 words
The semiconductor device of claim 1, wherein the high heat conductive material is laminated to opposite sides of a metallic substrate.
Claim 8
Dependent Claim
16 words
The semiconductor device of claim 6, wherein the high heat conductive material is an electrical insulator.
Claim 9
Dependent Claim
36 words
The semiconductor device of claim 1, wherein the heat discharging element comprises an integrally formed protruding part located adjacent the substrate, and the high heat conductive material is located between the protruding part and the substrate.
Claim 10
Dependent Claim
20 words
The semiconductor device of claim 8, wherein the substrate is attached to the protruding part of the heat discharging element.
Claim 11
Dependent Claim
65 words
The semiconductor device of claim 1, wherein signal lines of the electronic component are attached to the first side of the substrate, and at least one of a ground layer and an electric power supply layer are installed in the inner portion, the at least one of the ground layer and the electric power supply layer forming at least one layer of the inner portion.
Claim 12
Dependent Claim
34 words
The semiconductor device of claim 10, wherein the electronic component comprises a CPU, and an ASIC mounted on the first side of the substrate, and signal lines that connect the CPU to the ASIC.
Claim 13
Dependent Claim
18 words
The semiconductor device of claim 1, wherein the bonding agent is between the electronic component and the substrate.
Claim 14
Dependent Claim
25 words
The semiconductor device of claim 1, wherein the heat discharging element is a metallic art that forms a portion of a case for the substrate.
Claim 15
Dependent Claim
29 words
The semiconductor device of claim 1, wherein the heat discharging element has integrally formed concave and convex areas on a surface of the heat discharging element opposite the substrate.
Claim 16
Dependent Claim
49 words
The semiconductor device of claim 13, wherein the case comprises a box in the shape of a thin card, the box comprising a frame and a set of metallic upper and lower panels surrounding the substrate, and the heat discharging element forming one of the upper and lower panels.
Claim 17
Dependent Claim
28 words
The semiconductor device of claim 13, wherein the high heat conductive material is located between the electronic component and the case on the first side of the substrate.
Claim 18
Dependent Claim
30 words
The semiconductor device of claim 1, wherein an internal circumferential surface of the thermal via holes is metal plated, and the metal plated thermal via holes passing through the substrate.
Claim 19
Dependent Claim
14 words
The semiconductor apparatus of claim 3, wherein the high heat conductive material is flexible.
Claim 20
Dependent Claim
115 words
A semiconductor device, comprising: a substrate having a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; an electronic component mounted over the thermal via holes on the first side of the substrate; a heat discharging element disposed on the second side of the substrate; a metallic substrate disposed between the substrate and the heat discharging element; and a high heat conductive material laminated to opposite sides of the metallic substrate, the high heat conductive material being located (i) between the substrate and the metallic substrate and adjacent the thermal via holes, and (ii) between the metallic substrate and the heat discharging element.
Claim 21
Dependent Claim
115 words
A semiconductor device, comprising: a substrate having a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; an electronic component mounted over the thermal via holes on the first side of the substrate; a heat discharging element disposed on the second side of the substrate; a metallic substrate disposed between the substrate and the heat discharging element; and a high heat conductive material laminated to opposite sides of the metallic substrate, the high heat conductive material being located (i) between the substrate and the metallic substrate and adjacent the thermal via holes, and (ii) between the metallic substrate and the heat discharging element.
Claim 22
Dependent Claim
24 words
The semiconductor device of claim 19, wherein the electronic component comprises a semiconductor chip that is surface-mounted on the substrate using a bonding agent.
Claim 23
Dependent Claim
16 words
The semiconductor device of claim 19, wherein the high heat conductive material is an electrical insulator.
Claim 24
Dependent Claim
17 words
The semiconductor device of claim 21, wherein the high heat conductive material comprises a semi-fluid silicone rubber.
Claim 25
Dependent Claim
20 words
The semiconductor device of claim 19, wherein the high heat conductive material is formed in the shape of a sheet.
Claim 26
Dependent Claim
36 words
The semiconductor device of claim 19, wherein the heat discharging element comprises an integrally formed protruding part located adjacent the substrate, and the high heat conductive material is located between the protruding part and the substrate.
Claim 27
Dependent Claim
20 words
The semiconductor device of claim 24, wherein the substrate is attached to the protruding part of the beat discharging element.
Claim 28
Dependent Claim
37 words
The semiconductor device of claim 19, wherein the substrate comprises multiple layers and an inner portion having at least one inner layer, and the thermal via holes intersect a conductor pattern of at least one inner layer.
Claim 29
Dependent Claim
64 words
The semiconductor device of claim 26, wherein signal lines of the electronic component are attached to the first side of the substrate, at least one of a ground layer and an electric power supply layer are installed in the inner portion, the at least one of the ground layer and the electric power supply layer forming at least one layer of the inner portion.
Claim 30
Dependent Claim
32 words
The semiconductor device of claim 27, wherein the electric component comprises a CPU, an ASIC mounted on the first side of the substrate, and signal lines connecting the CPU to the ASIC.
Claim 31
Dependent Claim
25 words
The semiconductor device of claim 19, wherein the heat discharging element is a metallic part that forms a portion of a case for the substrate.
Claim 32
Dependent Claim
29 words
The semiconductor device of claim 19, wherein the heat discharging element includes integrally formed concave and convex areas on a surface of the heat discharging element opposite the substrate.
Claim 33
Dependent Claim
49 words
The semiconductor device of claim 29, wherein the case comprises a box in the shape of a thin card, the box including a frame and a set of metallic upper and lower panels surrounding the substrate, and the heat discharging element forms one of the upper and lower panels.
Claim 34
Dependent Claim
27 words
The semiconductor device of claim 29, further comprising high heat conductive material located between the electronic component and the case on the first surface of the substrate.
Claim 35
Dependent Claim
30 words
The semiconductor device of claim 19, wherein an internal circumferential surface of the thermal via holes is metal plated, and the metal plated thermal via holes pass through the substrate.
Claim 36
Dependent Claim
14 words
The semiconductor apparatus of claim 21, wherein the high heat conductive material is flexible.
Claim 37
Dependent Claim
118 words
A semiconductor device, comprising: a substrate including a first side, a second side opposing the first side, multiple layers, at least one layer being a ground layer disposed inside a concave area at the first side; a plurality of vacant thermal via holes formed in the substrate and being electrically connected to the ground layer; an electronic component mounted on the ground layer inside of the concave area of the substrate and over the thermal via holes; a heat discharging element disposed on the second side of the substrate, the heat discharging element including a protruding part; and a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.
Claim 38
Dependent Claim
118 words
A semiconductor device, comprising: a substrate including a first side, a second side opposing the first side, multiple layers, at least one layer being a ground layer disposed inside a concave area at the first side; a plurality of vacant thermal via holes formed in the substrate and being electrically connected to the ground layer; an electronic component mounted on the ground layer inside of the concave area of the substrate and over the thermal via holes; a heat discharging element disposed on the second side of the substrate, the heat discharging element including a protruding part; and a high heat conductive material located between the heat discharging element and the substrate and adjacent the thermal via holes.
Claim 39
Dependent Claim
23 words
The semiconductor device of claim 35, wherein a portion of the ground layer is positioned in a side surface of the concave area.
Claim 40
Dependent Claim
123 words
A semiconductor device, comprising: a substrate having a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; a semiconductor chip surface-mounted on the first side of the substrate over the thermal via holes by a bonding agent, the semiconductor chip being sealed by a resin having a surface; a first heat discharging element disposed on the first side of the substrate; a second heat discharging element disposed on the second side of the substrate; and a high heat conductive material located (i) between the second heat discharging element and the substrate and adjacent the thermal via holes, and (ii) between the surface of the resin and the first heat discharging element.
Claim 41
Dependent Claim
123 words
A semiconductor device, comprising: a substrate having a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; a semiconductor chip surface-mounted on the first side of the substrate over the thermal via holes by a bonding agent, the semiconductor chip being sealed by a resin having a surface; a first heat discharging element disposed on the first side of the substrate; a second heat discharging element disposed on the second side of the substrate; and a high heat conductive material located (i) between the second heat discharging element and the substrate and adjacent the thermal via holes, and (ii) between the surface of the resin and the first heat discharging element.
Claim 42
Dependent Claim
13 words
The semiconductor device of claim 37, wherein the bonding agent is silver paste.
Claim 43
Dependent Claim
13 words
The semiconductor device of claim 37, wherein the semiconductor chip is a CPU.
Claim 44
Dependent Claim
113 words
A semiconductor device, comprising: a substrate including a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; a first electronic component mounted over the thermal via holes on the first surface of the substrate; a second electronic component mounted on the second side of the substrate; a heat discharging element disposed on the second side of the substrate, the heat discharging element comprises an integrally formed protruding part on the second side of the substrate; and a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.
Claim 45
Dependent Claim
113 words
A semiconductor device, comprising: a substrate including a first side and a second side opposing the first side; a plurality of vacant thermal via holes formed in the substrate; a first electronic component mounted over the thermal via holes on the first surface of the substrate; a second electronic component mounted on the second side of the substrate; a heat discharging element disposed on the second side of the substrate, the heat discharging element comprises an integrally formed protruding part on the second side of the substrate; and a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.
Claim 46
Dependent Claim
26 words
The semiconductor device of claim 40, wherein the protruding part is positioned substantially facing the first electronic component mounted on the first side of the substrate.
Claim 47
Dependent Claim
143 words
A semiconductor device, comprising: a substrate including first side and a second side opposing the first side; a plurality of thermal via holes formed in the substrate, the thermal via holes being vacant; a first electronic component mounted over the thermal via holes on the first surface of the substrate; a second electronic component mounted on the second side of the substrate; a heat discharging element disposed on the second side of the substrate, the heat discharging element including an integrally formed protruding part attached to the substrate, a depression on a side of the heat discharging element facing away from the second side of the substrate, and a heat radiating fin integrally formed in the depression; and a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.
Claim 48
Dependent Claim
143 words
A semiconductor device, comprising: a substrate including first side and a second side opposing the first side; a plurality of thermal via holes formed in the substrate, the thermal via holes being vacant; a first electronic component mounted over the thermal via holes on the first surface of the substrate; a second electronic component mounted on the second side of the substrate; a heat discharging element disposed on the second side of the substrate, the heat discharging element including an integrally formed protruding part attached to the substrate, a depression on a side of the heat discharging element facing away from the second side of the substrate, and a heat radiating fin integrally formed in the depression; and a high heat conductive material connecting the protruding part of the heat discharging element and the substrate and being located adjacent the thermal via holes.
Claim 49
Dependent Claim
29 words
The semiconductor device of claim 42, wherein a distal end of the heat radiating fin and a surface of the heat discharging element are disposed in a common plane.
References Cited (Backward Citations)
US4396936A
Cited
JPH03182397A
Cited
JPH047175A
Cited
US5506755A
Cited
US5285352A
Cited
JPH06163737A
Cited
US5552635A
Cited
US5625227A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-12 | 2003-01-11 | 2003-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-12 | 2007-01-11 | 2007-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-12 | 2011-01-11 | 2011-07-13 | $7700.00 | Window Closed / Lapsed |