Abstract An electrically programmable read-only memory (EPROM) array having self-aligned thick oxide isolation units, and a method for manufacturing the EPROM array are disclosed. The EPROM array is formed of EPROM areas having EPROM cells and control areas, two per EPROM area. Each control area includes at least one row and each row includes a first polysilicon strip, a second polysilicon strip lying on top of and perpendicular to the first polysilicon strip, and alternating thick and thin oxide elements under the first polysilicon strip. The thick and thin oxide elements are self-aligned to the first polysilicon strip. The thin oxide and the first and second polysilicon strips form a select transistor. The thick oxide and the first and second polysilicon strips form a novel self-aligned thick oxide isolation unit.
For an alternating metal virtual ground EPROM array having EPROM areas and control areas, each control area comprising select transistors and isolation units located between neighboring ones of the select transistors, the method of manufacturing the isolation units comprising the steps of: creating areas of thick oxide and areas of thin oxide in said control areas; with a mask, laying down strips of first polysilicon over at least a part of each of said thick and thin oxide portions; and etching said thick and thin oxide portions in accordance with said mask, thereby to align said thick and thin oxide portions with said strips of first polysilicon.
Claim 2
Dependent Claim
107 words
For an alternating metal virtual ground EPROM array having EPROM areas and control areas, each control area comprising select transistors and isolation units located between neighboring ones of the select transistors, the method of manufacturing the isolation units comprising the steps of: creating areas of thick oxide and areas of thin oxide in said control areas; with a mask, laying down strips of first polysilicon over at least a part of each of said thick and thin oxide portions; and etching said thick and thin oxide portions in accordance with said mask, thereby to align said thick and thin oxide portions with said strips of first polysilicon.
Claim 3
Dependent Claim
19 words
A method according to claim 1 and wherein said step of etching is performed with a 20:1 etch process.
Claim 4
Dependent Claim
18 words
A method according to claim 1 and wherein said thick oxide portion has a thickness of 1000-2000 Å.
Claim 5
Dependent Claim
27 words
A method according to claim 1 and including, after the step of etching, the step of laying down a spacer next to said strips of first polysilicon.