US5151375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
EPROM virtual ground array
Assignee: STMicroelectronics lnc USA
•
Filing: 1990-06-13
•
Granted: 1992-09-29
•
Expires: 2010-06-13
Abstract
Abstract An electrically programmable read only memory contains alternating metal bit lines and diffused bit lines. Each diffused bit line is broken into a plurality of segments. Each of the segments of the diffused bit line comprises a virtual source. A multiplicity of floating gate transistors are arranged in rows and columns. The floating gate transistors in each column are divided into M groups of N floating gate transistors each. The floating gate transistors in the n th and the (n+1) th columns, where n is an odd integer given by 1≦n≦N and (N+1) is the maximum number of columns in the array are connected to the segments of one diffused bit line placed between the n th and the (n+1) th columns. At least one first transfer transistor is arranged to connect one segment comprising a virtual source to a first metal bit line. The first metal bit line functions as the source for the N floating gate transistors in the (n+1) th column connected to said one segment. At least one second transfer transistor connects the same one segment comprising a virtual source to a second metal bit line. The second metal bit line functions as a source for the N floating gate transistors in the n th column connected to said one segment. The removal of each select transistor from the cell where it previously resided in series with its corresponding floating gate transistor, and the combining of a plurality of select transistors into one select transistor substantially reduces the area taken by each memory cell in the array.
Inventors
- 👤 Reza Kazerounian
- 👤 Boaz Eitan
- 👤 Rustom F. Irani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:06
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10W; H10W20/00; H10W20/20; H10W20/40; H10W20/41; H10W20/43
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
208 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a silicon substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising polycrystalline silicon covered by a selected dielectric covered by a cap of polycrystalline silicon; oxidizing the sides of the polycrystalline silicon portions of said plurality of strips to form silicon dioxide sidewalls on said sides of said strips; ion implanting the portion of the silicon substrate beneath the gate oxide between said strips to form diffused bitlines in said underlying silicon substrate; removing portions of the strips to form islands, each island comprising polycrystalline silicon covered by a selected dielectric covered by a cap of polycrystalline silicon; oxidizing the polycrystalline silicon portions of the sides, exposed by the removal of portions of the strips to form an oxide on said sides; forming field oxide in the portions of the semiconductor substrate exposed by removal of the portions of the strips; and forming over the tops of said islands a multiplicity of polycrystalline silicon strips from an additional polycrystalline silicon layer, said multiplicity of polycrystalline silicon strips being substantially orthogonal to said first set of strips.
Claim 2
Independent Claim
208 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a silicon substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising polycrystalline silicon covered by a selected dielectric covered by a cap of polycrystalline silicon; oxidizing the sides of the polycrystalline silicon portions of said plurality of strips to form silicon dioxide sidewalls on said sides of said strips; ion implanting the portion of the silicon substrate beneath the gate oxide between said strips to form diffused bitlines in said underlying silicon substrate; removing portions of the strips to form islands, each island comprising polycrystalline silicon covered by a selected dielectric covered by a cap of polycrystalline silicon; oxidizing the polycrystalline silicon portions of the sides, exposed by the removal of portions of the strips to form an oxide on said sides; forming field oxide in the portions of the semiconductor substrate exposed by removal of the portions of the strips; and forming over the tops of said islands a multiplicity of polycrystalline silicon strips from an additional polycrystalline silicon layer, said multiplicity of polycrystalline silicon strips being substantially orthogonal to said first set of strips.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein tungsten silicide is formed over the second set of strips to form with said second set of strips, word lines for use with said floating gate transistors.
Claim 4
Independent Claim
183 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising polycrystalline silicon covered by a selected dielectric covered by a conductive cap; forming an insulating material on the sides of the conductive portions of said plurality of strips; ion implanting the portion of the semiconductor substrate beneath the gate oxide between said strips to form diffused bitlines in said underlying semiconductor substrate; removing portions of the strips to form islands, each island comprising polycrystalline silicon covered by a selected dielectric covered by a conductive cap; forming an insulating material on the conductive portions of the sides exposed by the removal of portions of the strips; forming field oxide in the portions of the semiconductor substrate exposed by removal of the portions of the strips; and forming over the tops of said islands a multiplicity of conductive strips, said multiplicity of strips being substantially orthogonal to said first set of strips.
Claim 5
Independent Claim
183 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising polycrystalline silicon covered by a selected dielectric covered by a conductive cap; forming an insulating material on the sides of the conductive portions of said plurality of strips; ion implanting the portion of the semiconductor substrate beneath the gate oxide between said strips to form diffused bitlines in said underlying semiconductor substrate; removing portions of the strips to form islands, each island comprising polycrystalline silicon covered by a selected dielectric covered by a conductive cap; forming an insulating material on the conductive portions of the sides exposed by the removal of portions of the strips; forming field oxide in the portions of the semiconductor substrate exposed by removal of the portions of the strips; and forming over the tops of said islands a multiplicity of conductive strips, said multiplicity of strips being substantially orthogonal to said first set of strips.
Claim 6
Dependent Claim
11 words
The method of claim 3 wherein said semiconductor substrate is silicon.
Claim 7
Dependent Claim
12 words
The method of claim 3 wherein said insulating material is a dielectric.
Claim 8
Dependent Claim
31 words
The method of claim 3 wherein tungsten silicide is formed over the second set of strips to form with said second strips, word lines for use with said floating gate transistors.
Claim 9
Independent Claim
129 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising a conductive material covered by a selected dielectric covered by a conductive cap; forming an insulating material on the sides of the conductive portions of said plurality of strips; removing portions of the strips to form islands, each island comprising a conductive material covered by a selected dielectric covered by a conductive cap; forming an insulating material on the conductive portions of the sides exposed by the removal of portions of the strips; and forming over the tops of said islands a multiplicity of conductive strips.
Claim 10
Independent Claim
129 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming in a first direction on said gate oxide a plurality of strips of material, each strip comprising a conductive material covered by a selected dielectric covered by a conductive cap; forming an insulating material on the sides of the conductive portions of said plurality of strips; removing portions of the strips to form islands, each island comprising a conductive material covered by a selected dielectric covered by a conductive cap; forming an insulating material on the conductive portions of the sides exposed by the removal of portions of the strips; and forming over the tops of said islands a multiplicity of conductive strips.
Claim 11
Independent Claim
121 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming an array of islands on said gate oxide, each island comprised of a floating gate covered by a selected dielectric and a conductive cap aligned with the underlying floating gate; forming an insulating material around the sides of each floating gate and the conductive cap; and forming over the conductive caps of said islands a multiplicity of conductive strips to form word lines contacting said conductive caps thereby to insure a consistent capacitive coupling between said word lines and each floating gate despite any partial misalignment of said multiplicity of conductive strips to said islands.
Claim 12
Independent Claim
121 words
The method of manufacturing a floating gate transistor in an array of such floating gate transistors comprising: forming a gate oxide on a semiconductor substrate; forming an array of islands on said gate oxide, each island comprised of a floating gate covered by a selected dielectric and a conductive cap aligned with the underlying floating gate; forming an insulating material around the sides of each floating gate and the conductive cap; and forming over the conductive caps of said islands a multiplicity of conductive strips to form word lines contacting said conductive caps thereby to insure a consistent capacitive coupling between said word lines and each floating gate despite any partial misalignment of said multiplicity of conductive strips to said islands.
References Cited (Backward Citations)
US4267632A
Cited
JPS59103352A
Cited
US4795719A
Cited
US4720323A
Cited
US4635347A
Cited
US4833514A
Cited
US4698900A
Cited
US4749443A
Cited
US4806201A
Cited
JPS63186477A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-29 | 1996-03-30 | 1996-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-29 | 2000-03-30 | 2000-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-29 | 2004-03-30 | 2004-09-29 | $7700.00 | Window Closed / Lapsed |