Patent US5908316A successfully refreshed from Google Patents.
US5908316A
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Method of passivating a semiconductor substrate
Assignee: Xenogenic Development LLC
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Filing: 1995-12-18
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Granted: 1999-06-01
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Expires: 2015-12-18
Abstract
Abstract A method of passivating a semiconductor substrate includes singulating (13) a semiconductor substrate (23) from a semiconductor wafer, coupling (14) a heatsink (21) to the semiconductor substrate (23), etching (15) the semiconductor substrate (23) in a chamber of an etch tool, and passivating (17) the semiconductor substrate (23) with an oxide layer (31). The semiconductor substrate (23) is kept in the chamber of the etch tool from the etching (15) step through the passivating (17) step. The etching (15) of the semiconductor substrate (23) does not substantially etch the heatsink (21), and the passivating (17) of the semiconductor substrate (23) does not substantially passivate the heatsink (21).
Inventors
- 👤 Hiep M. Le
- 👤 Lonne L. Mays
- 👤 Albert E. Tavares
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:19
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/141; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
74 words
A method of passivating a semiconductor substrate, the method comprising the steps of: covering a first portion of the semiconductor substrate with an electrode, a second portion of the semiconductor substrate remaining exposed; etching the second portion of the semiconductor substrate with an etchant after the covering step; and providing an in-situ passivation layer over the second portion of the semiconductor substrate after the step of etching the second portion of the semiconductor substrate.
Claim 2
Independent Claim
74 words
A method of passivating a semiconductor substrate, the method comprising the steps of: covering a first portion of the semiconductor substrate with an electrode, a second portion of the semiconductor substrate remaining exposed; etching the second portion of the semiconductor substrate with an etchant after the covering step; and providing an in-situ passivation layer over the second portion of the semiconductor substrate after the step of etching the second portion of the semiconductor substrate.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein the step of providing the in-situ passivation layer includes heating the semiconductor substrate in an atmosphere comprising oxygen.
Claim 4
Dependent Claim
22 words
The method according to claim 1, further comprising the step of using a downstream etch tool for the etching and providing steps.
Claim 5
Dependent Claim
72 words
The method according to claim 3, further comprising: retaining the semiconductor substrate and the electrode in the downstream etch tool between the step of etching the second portion of the semiconductor substrate and the step of providing the in-situ passivation layer; and preventing the semiconductor substrate from being exposed to ambient between the step of etching the second portion of the semiconductor substrate and the step of providing the in-situ passivation layer.
Claim 6
Dependent Claim
21 words
The method according to claim 3, wherein the step of providing the in-situ passivation layer includes using a plasma containing oxygen.
Claim 7
Dependent Claim
24 words
The method according to claim 1, wherein the step of etching the second portion of the semiconductor substrate includes leaving the electrode substantially unetched.
Claim 8
Dependent Claim
29 words
The method according to claim 1, wherein the step of providing the in-situ passivation layer over the second portion of the semiconductor substrate includes leaving the electrode substantially unpassivated.
Claim 9
Dependent Claim
46 words
The method according to claim 1, further comprising the step of fabricating a junction in the semiconductor substrate prior to the step of covering the first portion of the semiconductor substrate with the electrode, wherein the second portion of the semiconductor substrate includes an open junction.
Claim 10
Dependent Claim
24 words
The method according to claim 1, further comprising the step of encapsulating the semiconductor substrate after the step of providing the in-situ passivation layer.
Claim 11
Independent Claim
63 words
A method of fabricating a semiconductor component, the method comprising the steps of: singulating a first semiconductor substrate from a second semiconductor substrate, wherein singulating the first semiconductor substrate forms an edge surface on the first semiconductor substrate; dry etching the edge surface of the first semiconductor substrate; and thereafter, disposing a passivation layer over the edge surface of the first semiconductor substrate.
Claim 12
Independent Claim
63 words
A method of fabricating a semiconductor component, the method comprising the steps of: singulating a first semiconductor substrate from a second semiconductor substrate, wherein singulating the first semiconductor substrate forms an edge surface on the first semiconductor substrate; dry etching the edge surface of the first semiconductor substrate; and thereafter, disposing a passivation layer over the edge surface of the first semiconductor substrate.
Claim 13
Dependent Claim
21 words
The method according to claim 10, wherein the step of disposing a passivation layer includes providing nitrous oxide in the chamber.
Claim 14
Dependent Claim
43 words
The method according to claim 10, further including the step of generating a plasma from carbon tetrafluoride and nitrous oxide, wherein the dry etching step includes using the plasma to dry etch the edge surface of the first semiconductor substrate in the chamber.
Claim 15
Dependent Claim
21 words
The method according to claim 12, wherein the generating step and the dry etching step include using a downstream etch tool.
Claim 16
Dependent Claim
51 words
The method according to claim 10, further including the step of fabricating a junction in the second semiconductor substrate, wherein the step of singulating the first semiconductor substrate includes providing the junction in the first semiconductor substrate, wherein the junction is exposed along the edge surface of the first semiconductor substrate.
Claim 17
Independent Claim
107 words
A method of manufacturing a semiconductor component, the method comprising the steps of: fabricating a p-n junction in a semiconductor substrate; separating a semiconductor die from the semiconductor substrate, the semiconductor die containing the p-n junction, a portion of the p-n junction being open; coupling a first heatsink and a second heatsink to the semiconductor die, the first heatsink covering a first portion of the semiconductor die, the second heatsink covering a second portion of the semiconductor die, and a third portion of the semiconductor die remaining exposed; dry etching the third portion of the semiconductor die; and subsequently, passivating the third portion of the semiconductor die.
Claim 18
Independent Claim
107 words
A method of manufacturing a semiconductor component, the method comprising the steps of: fabricating a p-n junction in a semiconductor substrate; separating a semiconductor die from the semiconductor substrate, the semiconductor die containing the p-n junction, a portion of the p-n junction being open; coupling a first heatsink and a second heatsink to the semiconductor die, the first heatsink covering a first portion of the semiconductor die, the second heatsink covering a second portion of the semiconductor die, and a third portion of the semiconductor die remaining exposed; dry etching the third portion of the semiconductor die; and subsequently, passivating the third portion of the semiconductor die.
Claim 19
Dependent Claim
28 words
The method according to claim 15, wherein the steps of dry etching and passivating the third portion of the semiconductor die include using a magnetron microwave etch tool.
Claim 20
Dependent Claim
73 words
The method according to claim 16, further comprising the steps of: keeping the semiconductor die in the magnetron microwave etch tool between the steps of dry etching and passivating the third portion of the semiconductor die; and purging the magnetron microwave etch tool with a non-reactive gas after the step of dry etching the third portion of the semiconductor die and before the step of passivating the third portion of the semiconductor die.
Claim 21
Dependent Claim
25 words
The method according to claim 15, wherein the steps of dry etching and passivating the third portion of the semiconductor die include using nitrous oxide.
Claim 22
Dependent Claim
31 words
The method according to claim 18, wherein the step of passivating the third portion of the semiconductor die includes providing an oxide layer over the third portion of the semiconductor die.
Claim 23
Dependent Claim
39 words
The method according to claim 15, wherein the step of passivating the third portion of the semiconductor die includes oxidizing the third portion of the semiconductor die by exposing the third portion of the semiconductor die to oxygen radicals.
Claim 24
Dependent Claim
25 words
The method according to claim 1 wherein the covering step includes using solder to couple the electrode to the first portion of the semiconductor substrate.
Claim 25
Dependent Claim
31 words
The method according to claim 21 further comprising forming a p-n junction in the semiconductor substrate before the covering step wherein the etching step etches a portion of the p-n junction.
Claim 26
Dependent Claim
37 words
The method according to claim 22 further comprising singulating the semiconductor substrate from a semiconductor wafer after the forming step and before the covering step wherein the singulating step exposes the second portion of the semiconductor substrate.
Claim 27
Dependent Claim
47 words
The method according to claim 23 wherein the forming step includes diffusing dopant into the first portion of the semiconductor substrate to form the p-n junction wherein the second portion of the semiconductor substrate is adjacent to and non-parallel to the first portion of the semiconductor substrate.
Claim 28
Dependent Claim
18 words
The method according to claim 24 wherein the covering step includes providing a metal electrode for the electrode.
Claim 29
Dependent Claim
23 words
The method according to claim 14 wherein the step of fabricating the junction in the second semiconductor substrate occurs before the singulating step.
Claim 30
Dependent Claim
46 words
The method according to claim 26 wherein the step of fabricating the junction includes fabricating a p-n junction by diffusing a dopant into a top surface of the first and second semiconductor substrates wherein the edge surface is adjacent to and non-coplanar with the top surface.
Claim 31
Dependent Claim
30 words
The method according to claim 27 further comprising coupling a heatsink to the top surface of the first semiconductor substrate after the singulating step and before the dry etching step.
Claim 32
Dependent Claim
32 words
The method according to claim 15 wherein the separating step includes forming a side surface on the semiconductor die wherein a portion of the p-n junction is exposed along the side surface.
Claim 33
Dependent Claim
30 words
The method according to claim 29 wherein the coupling step comprises: providing a first metal heatsink for the first heatsink; and providing a second metal heatsink for the second heatsink.
Claim 34
Dependent Claim
81 words
The method according to claim 30 wherein the coupling step further comprises: providing the first portion of the semiconductor die along a top surface of the semiconductor die; providing the second portion of the semiconductor die along a bottom surface of the semiconductor die; and providing the third portion of the semiconductor die along a side surface of the semiconductor die, wherein the top surface is opposite the bottom surface, and wherein the side surface couples the top and bottom surfaces.
Claim 35
Dependent Claim
21 words
The method according to claim 30 further comprising using solder to couple the first and second heatsinks to the semiconductor die.
Claim 36
Dependent Claim
27 words
The method according to claim 15 wherein the dry etching step occurs after the coupling step and wherein the passivating step occurs after the dry etching step.
Claim 37
Dependent Claim
29 words
The method according to claim 17 wherein the keeping step includes preventing the semiconductor die from being exposed to ambient between the dry etching step and the passivating step.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-31 | 2002-11-30 | 2003-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-31 | 2006-11-30 | 2007-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-31 | 2010-11-30 | 2011-06-01 | $7700.00 | Window Closed / Lapsed |