Optical polishing apparatus and methods

Claim 2

A polishing apparatus for polishing the surface of a wafer, comprising: (a) a polishing body comprising a light-permeable material, the polishing body having a first side and a second side, the first side of the polishing body being for pressing against and polishing a surface of a wafer; (b) a wafer holder for holding the wafer, the wafer holder being positioned on the first side of the polishing body; (c) a light source positioned on the second side of the polishing body for emitting light to be transmitted through the polishing body and onto the surface of the wafer; (d) a film-thickness measuring device positioned on the second side of the polishing body to detect light emitted by the light source, reflected by the surface of the wafer, and transmitted through the polishing body, to determine the thickness of a wafer-surface film being polished; and (e) a drive device for moving the wafer holder and the film-thickness measuring device in synchrony with each other so that the thickness measurement of the wafer-surface film is always performed at the same position on the wafer, independently of any movement of the wafer.

Claim 3

The apparatus of claim 1, further comprising a dispenser operable to apply a polishing agent between the polishing body and the wafer during polishing.

Claim 4

The apparatus of claim 1, wherein the polishing body comprises a polishing wheel and a polishing pad fixed to a surface of the polishing wheel, wherein the polishing wheel and the polishing pad comprise light-permeable materials.

Claim 5

The apparatus of claim 3, wherein the polishing wheel is rotatable.

Claim 6

The apparatus of claim 3, wherein the light source emits infrared radiation.

Claim 7

The apparatus of claim 5, wherein the polishing pad comprises a resin compound.

Claim 8

The apparatus of claim 6, wherein the resin compound is a reaction product of an epoxy resin, an amine, and graphite.

Claim 9

The apparatus of claim 7, wherein the infrared radiation has a wavelength of about 4 μm to about 6 μm.

Claim 10

The apparatus of claim 5, wherein the polishing wheel comprises a glass.

Claim 11

The apparatus of claim 9, wherein the infrared radiation has a wavelength of about 1 μm to about 2.6 μm.

Claim 12

The apparatus of claim 1, wherein the drive device rotates and translates the wafer holder.

Claim 13

The apparatus of claim 11, wherein the drive device rotates and translates the film-thickness measuring device in synchrony with the rotation and translation movements of the wafer holder.

Claim 14

The apparatus of claim 12, wherein the drive device comprises a first drive device that rotates and translates the wafer holder and a second drive device that rotates and translates the film-thickness measuring device.

Claim 15

The apparatus of claim 13, wherein the drive device rotates and translates the photodetector in synchrony with the rotation and translation movements of the wafer holder.

Claim 16

The apparatus of claim 1, wherein the polishing body comprises a belt, the belt comprising a light-permeable material for pressing against and polishing the surface of the wafer.

Claim 17

The apparatus of claim 1, further comprising a photodetector positioned on the second side of the polishing body for detecting light reflected by the surface of the wafer to provide for observation of the state-of-polish of the wafer surface.

Claim 18

The apparatus of claim 16, wherein the photodetector utilizes data corresponding to the detected light reflected by the surface of the wafer to determine the position on the wafer upon which the film-thickness measuring device is measuring the film thickness.

Claim 19

The apparatus of claim 17, further comprising a regulator, wherein the photodetector generates and sends data signals that correspond to the position on the wafer at which the film thickness is being measured, to the regulator.

Claim 20

The apparatus of claim 18, wherein the regulator processes the data signals received from the photodetector for use in controlling the drive device to rotate and translate the film-thickness measuring device and photodetector such that the film-thickness measurement occurs at the same position on the wafer.

Claim 21

A polishing apparatus for polishing the surface of a wafer, comprising: (a) a polishing body comprising a light-permeable material, the polishing body having a first side and a second side, the first side of the polishing body being for pressing against and polishing a surface of a wafer; (b) a wafer holder for holding the wafer on the first side of the polishing body; (c) a light source positioned on the second side of the polishing body for emitting light to be transmitted through the polishing body and onto the surface of the wafer; (d) an endpoint-detection device positioned on the second side of the polishing body for detecting light reflected by the surface of the wafer and using data corresponding to the detected light to determine the position on the wafer upon which the light is reflected; and (e) a drive device for moving the wafer holder and the endpoint-detection device in synchrony with each other so that the light is always emitted onto the same position on the surface of the wafer, independent of any movement of the wafer.

Claim 22

A polishing apparatus for polishing the surface of a wafer, comprising: (a) a polishing body comprising a light-permeable material, the polishing body having a first side and a second side, the first side of the polishing body being for pressing against and polishing a surface of a wafer; (b) a wafer holder for holding the wafer on the first side of the polishing body; (c) a light source positioned on the second side of the polishing body for emitting light to be transmitted through the polishing body and onto the surface of the wafer; (d) an endpoint-detection device positioned on the second side of the polishing body for detecting light reflected by the surface of the wafer and using data corresponding to the detected light to determine the position on the wafer upon which the light is reflected; and (e) a drive device for moving the wafer holder and the endpoint-detection device in synchrony with each other so that the light is always emitted onto the same position on the surface of the wafer, independent of any movement of the wafer.

Claim 23

The apparatus of claim 20, wherein the endpoint-detection device further comprises a film-thickness measuring device to detect light that is reflected by the surface of the wafer and transmitted through the polishing body, to determine the thickness of a film on the surface of the wafer.

Claim 26

The method of claim 22, wherein reflected light is detected in step (c) using a photodetector and the characteristic is measured in step (d) using a film-thickness measuring device, wherein the photodetector, the light source, and the film-thickness measuring device are rotated and translated in synchrony with the rotation and translation of the wafer such that light is always emitted onto the same position of the surface of the wafer.

Claim 27

The method of claim 23, further comprising the steps of: before beginning polishing of the wafer, emitting light from the light source through the polishing body and onto the surface of the wafer and detecting light reflected by the surface of the wafer with a photodetector to determine a first position on the wafer upon which the light is being reflected; storing data corresponding to the first position on the wafer in a first memory; while polishing the wafer, emitting light from the light source through the polishing body and onto the surface of the wafer and detecting light reflected by the surface of the wafer with the photodetector to determine a second position on the wafer upon which the light is being reflected while the wafer is being polished; storing data corresponding to the second position on the wafer in a second memory; comparing the data corresponding to the first position with the data corresponding to the second position to determine a difference in the first position and the second position; and rotating and translating the photodetector and light source an amount and in directions corresponding to the difference in the first position and the second position such that light is always emitted from the light source on the same position on the surface of the wafer during polishing of the wafer.