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US5892282A
Expired / Lapsed
US
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Barrier-less plug structure
Assignee: Texas Instruments Inc
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Filing: 1996-11-27
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Granted: 1999-04-06
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Expires: 2016-11-27
Abstract
Abstract Methods are provided for the construction of metal-to-metal connections between non-adjacent layers in a structure, such as a semiconductor device. A first metal conductor layer is provided along a substrate. An anti-reflection cap is provided in overlying relation with said first conductor layer. At least a portion of the dielectric layer and the anti-reflection cap is removed to define a passage which extends from an upper surface of the dielectric layer to the first metal conductor. The passage is substantially filled with a fill metal, and a second metal conductor layer is applied over at least a portion of the dielectric layer and the substantially filled passage to electrically connect the first and second metal conductors. A diffusion liner can optionally be applied to the passage prior to application of the fill metal. The passage fill metal and second conductor layer can be integrally formed, and the fill metal and at least one of the conductor layers are formed from the same matrix metal.
Inventors
- 👤 Qi-Zhong Hong
- 👤 Wei-Yung Hsu
- 👤 Shin-puu Jeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/056; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
221 words
A barrier-less semiconductor structure, comprising: (a) a substrate carrying a first metal conductor layer; (b) an anti-reflection cap layer formed on and in contact with said first conductor layer; (c) a dielectric layer formed on and in contact with said anti-reflection cap layer; (d) a passage which extends from an upper surface of the dielectric layer, through said anti-reflection cap layer, to said first metal conductor layer, said passage being at least partially surrounded by said anti-reflection cap layer; (e) a diffusion liner comprised of a diffusion-facilitating material of an alloy consisting essentially of titanium, copper, aluminum, Al--Cu, Al x Ti 1-x , Ti x --Si 1-x , and W x Si 1-x , where 0<x<1, is formed within the passage along at least a portion of said first conductor layer; (f) a fill metal received within said passage and substantially filling the passage, said fill metal electrically connecting said first and second metal conductor layers in absence of an intervening diffusion barrier layer, said fill metal and said first metal conductor layer being formed from the same matrix metal from a material selected from the group consisting of (1) Al--Cu, (2) AlGe--Cu, (3) Al--Sc, (4) Al--Si--Cu, (5) Al--Si--Sc, and Cu--Ti(x), CuAl(x), and CuMg(x), where ˜0.1<x<˜1%, or a combination thereof; (g) a second metal conductor layer formed on said fill metal.
Claim 2
Dependent Claim
221 words
A barrier-less semiconductor structure, comprising: (a) a substrate carrying a first metal conductor layer; (b) an anti-reflection cap layer formed on and in contact with said first conductor layer; (c) a dielectric layer formed on and in contact with said anti-reflection cap layer; (d) a passage which extends from an upper surface of the dielectric layer, through said anti-reflection cap layer, to said first metal conductor layer, said passage being at least partially surrounded by said anti-reflection cap layer; (e) a diffusion liner comprised of a diffusion-facilitating material of an alloy consisting essentially of titanium, copper, aluminum, Al--Cu, Al x Ti 1-x , Ti x --Si 1-x , and W x Si 1-x , where 0<x<1, is formed within the passage along at least a portion of said first conductor layer; (f) a fill metal received within said passage and substantially filling the passage, said fill metal electrically connecting said first and second metal conductor layers in absence of an intervening diffusion barrier layer, said fill metal and said first metal conductor layer being formed from the same matrix metal from a material selected from the group consisting of (1) Al--Cu, (2) AlGe--Cu, (3) Al--Sc, (4) Al--Si--Cu, (5) Al--Si--Sc, and Cu--Ti(x), CuAl(x), and CuMg(x), where ˜0.1<x<˜1%, or a combination thereof; (g) a second metal conductor layer formed on said fill metal.
Claim 3
Dependent Claim
21 words
The structure according to claim 1, wherein said diffusion liner is provided at a thickness of up to about 100 nm.
Claim 4
Dependent Claim
25 words
The structure according to claim 1, wherein at least one of said first and second conductors is provided at a thickness of about 50-1,400 nm.
Claim 5
Dependent Claim
23 words
The structure according to claim 1, wherein said anti-reflection cap is formed from a material comprising at least one of titanium and tantalum.
Claim 6
Dependent Claim
20 words
The structure according to claim 1, wherein said passage is provided with a width of up to about 1 μm.
Claim 7
Dependent Claim
22 words
The structure according to claim 1, wherein the said dielectric layer is applied at a thickness of up to about 2,000 nm.
Claim 8
Dependent Claim
25 words
The structure according to claim 1, wherein at least one of said first and second conductors is provided with a thickness of about 100-1,000 nm.
Claim 9
Dependent Claim
25 words
The structure according to claim 1, wherein at least one of said first and second conductors is provided with a thickness of about 0.5-1 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-05 | 2002-10-05 | 2003-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-05 | 2006-10-05 | 2007-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-05 | 2010-10-05 | 2011-04-06 | $7700.00 | Window Closed / Lapsed |