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US5888907A Expired / Lapsed US ⏱️ 0.0 years remaining

Plasma processing method

Assignee: Tokyo Electron Ltd
•
Filing: 1997-04-24
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Granted: 1999-03-30
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Expires: 2017-04-24
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Abstract

Abstract In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

Inventors

  • 👤 Masayuki Tomoyasu
  • 👤 Shinji Himori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:52
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H10; H10P; H10P14/00; H10P14/60

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 140 words
A plasma etching processing method of etching a target object, using plasma, comprising the steps of: placing said target object on a work table arranged in a process chamber; supplying an inactive gas and a reactive gas into said process chamber from a gas spouting surface facing said work table, while exhausting said process chamber, such that said inactive gas is continuously supplied from a number of inactive gas spouting holes formed on said gas spouting surface, and said reactive gas is supplied from reactive gas spouting holes, which are formed on said gas spouting surface and divided into a plurality of groups, by intermittently opening and closing said groups in a time-sharing manner; turning said inactive gas and reactive gas into plasma by means of RF discharge in said process chamber; and etching said target object, using said plasma.
Claim 2
Dependent Claim 140 words
A plasma etching processing method of etching a target object, using plasma, comprising the steps of: placing said target object on a work table arranged in a process chamber; supplying an inactive gas and a reactive gas into said process chamber from a gas spouting surface facing said work table, while exhausting said process chamber, such that said inactive gas is continuously supplied from a number of inactive gas spouting holes formed on said gas spouting surface, and said reactive gas is supplied from reactive gas spouting holes, which are formed on said gas spouting surface and divided into a plurality of groups, by intermittently opening and closing said groups in a time-sharing manner; turning said inactive gas and reactive gas into plasma by means of RF discharge in said process chamber; and etching said target object, using said plasma.
Claim 3
Dependent Claim 24 words
The method according to claim 1, wherein said inactive gas spouting holes and said reactive gas spouting holes are alternately arranged in a direction.
Claim 4
Dependent Claim 21 words
The method according to claim 1, wherein said groups of said reactive gas spouting holes have an equal number of holes.
Claim 5
Dependent Claim 34 words
The method according to claim 1, wherein said groups of said reactive gas spouting holes are selected to supply said reactive gas in a sequential order relative to an arrayed order of said groups.
Claim 6
Dependent Claim 34 words
The method according to claim 1, wherein said groups of said reactive gas spouting holes are selected to supply said reactive gas in a non-sequential order relative to an arrayed order of said groups.

References Cited (Backward Citations)

JPS60189928A Cited
JPS615515A Cited
JPS62262419A Cited
JPH01239086A Cited
JPH0322414A Cited
US4993358A Cited
US5210466A Cited
US5669976A Cited
US5226967A Cited
US5500256A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-03-29 2002-09-28 2003-03-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-03-29 2006-09-28 2007-03-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-03-29 2010-09-28 2011-03-30 $7700.00 Window Closed / Lapsed

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