US5885890A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming contact openings and an electric component formed from the same and other methods
Assignee: Micron Technology Inc
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Filing: 1998-04-27
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Granted: 1999-03-23
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Expires: 2018-04-27
Abstract
Abstract A method for forming a contact opening is described and which includes providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having a conductive top and sidewall surfaces; forming electrically insulative oxide in covering relation relative to the top surface of the conductive line; forming electrically insulative nitride sidewall spacers over the conductive sidewall surfaces, the nitride sidewall spacers projecting outwardly of the conductive line top conductive surface, the electrically insulative oxide positioned between the nitride sidewall spacers; forming an electrically insulative layer outwardly of the conductive line, and the node location; and etching a contact opening to the node location or the top surface through the electrically insulative layer substantially selective relative to the nitride sidewall spacers.
Inventors
- 👤 Charles H. Dennison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:02
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S257/00; Y10S257/90; Y10S257/906
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
152 words
A method for forming first and second contact openings, comprising: providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having conductive top and sidewall surfaces; forming a first material layer over the conductive line top surface; forming electrically insulative sidewall spacers of a second material over the conductive sidewall surfaces, the sidewall spacers projecting outwardly of the conductive line top conductive surface, the electrically insulative first material being formed between the sidewall spacers; forming an electrically insulative layer outwardly of the node location, first material insulative layer, and second material sidewall spacers; and in the same masking step, etching a first contact opening through the electrically insulative material to the node location, and a second contact opening to the conductive line conductive top surface, the etching being substantially selective relative to the second material of the sidewall spacers.
Claim 2
Independent Claim
152 words
A method for forming first and second contact openings, comprising: providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having conductive top and sidewall surfaces; forming a first material layer over the conductive line top surface; forming electrically insulative sidewall spacers of a second material over the conductive sidewall surfaces, the sidewall spacers projecting outwardly of the conductive line top conductive surface, the electrically insulative first material being formed between the sidewall spacers; forming an electrically insulative layer outwardly of the node location, first material insulative layer, and second material sidewall spacers; and in the same masking step, etching a first contact opening through the electrically insulative material to the node location, and a second contact opening to the conductive line conductive top surface, the etching being substantially selective relative to the second material of the sidewall spacers.
Claim 3
Dependent Claim
13 words
A method as claimed in claim 1, wherein the first material is polysilicon.
Claim 4
Dependent Claim
13 words
A method as claimed in claim 1, wherein the second material comprises nitride.
Claim 5
Dependent Claim
26 words
A method as claimed in claim 1, wherein before etching the first and second contact openings, etching the first material selectively relative to the second material.
Claim 6
Dependent Claim
61 words
A method as claimed in claim 4, wherein after etching the first material layer, and before etching the first and second contact openings, forming a third layer of material over the conductive line, and etching the third layer of material effective to provide second spacers which are oriented in partial covering relation relative to the top surface of the conductive line.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 5, wherein the third layer of material comprises nitride.
Claim 8
Independent Claim
147 words
A method for forming first and second contact openings comprising: providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having top and sidewall surfaces; forming primary electrically insulative spacers over the conductive line sidewall surfaces, the primary spacers projecting upwardly relative to the conductive line top surface and forming a void therebetween; forming opposing secondary electrically insulative spacers laterally inwardly of the primary spacers; forming an electrically insulative layer outwardly of the primary and secondary spacers and over the conductive line, within the void, and over the node location; and in the same masking step, etching a first contact opening through the electrically insulative material to the node location, and a second contact opening to the conductive line top surface, the etching being conducted substantially selectively relative to the primary and secondary spacers.
Claim 9
Independent Claim
147 words
A method for forming first and second contact openings comprising: providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having top and sidewall surfaces; forming primary electrically insulative spacers over the conductive line sidewall surfaces, the primary spacers projecting upwardly relative to the conductive line top surface and forming a void therebetween; forming opposing secondary electrically insulative spacers laterally inwardly of the primary spacers; forming an electrically insulative layer outwardly of the primary and secondary spacers and over the conductive line, within the void, and over the node location; and in the same masking step, etching a first contact opening through the electrically insulative material to the node location, and a second contact opening to the conductive line top surface, the etching being conducted substantially selectively relative to the primary and secondary spacers.
Claim 10
Dependent Claim
15 words
A method as claimed in claim 7, wherein the primary and secondary spacers comprise nitride.
Claim 11
Dependent Claim
26 words
A method as claimed in claim 7, wherein the secondary spacers are disposed in partial covering relation relative to the top surface of the conductive line.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |