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US5885755A
Expired / Lapsed
US
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Developing treatment apparatus used in the process for manufacturing a semiconductor device, and method for the developing treatment
Assignee: Toshiba Corp
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Filing: 1998-04-29
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Granted: 1999-03-23
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Expires: 2018-04-29
Abstract
Abstract A developing treatment apparatus has a spin chuck for supporting a semiconductor wafer on which a photoresist to be developed is formed by suction and rotating it at least two rotating speeds including a low speed and a high speed, a washing liquid supplying nozzle for supplying pure water onto the surface the photoresist, and a developer supplying nozzle for supplying a developer on the same surface. While the semiconductor wafer is supported on the spin chuck by suction and rotated at a low speed, pure water is supplied from the tip of the washing liquid supplying nozzle. Rotating the spin chuck is stopped and supplying the pure water is stopped to form a pure water film having a thickness of several mm on the surface of the photoresist by surface tension, after which for several seconds a developer is sprayed in a mist form from the tip of the developer supplying nozzle and simultaneously the spin chuck is rotated at a high speed to scatter off the pure water on the photoresist gradually, thereby replacing the pure water film on the photoresist with the developer. Subsequently, the spin chuck is rotated at a low speed while the developer is sprayed in a mist form on the surface of the photoresist, thereby stretching and straining the developer, in a liquid form, on the surface of the photoresist and developing the photoresist.
Inventors
- 👤 Seiji Nakagawa
- 👤 Yasushi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/3021
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
50 words
A method for developing-treatment, comprising the steps of: the first step of forming a liquid film on a surface of a photoresist applied onto a semiconductor substrate and pattern-exposed to light; and the second step of replacing the liquid film with a developer to develop the photoresist with the developer.
Claim 2
Independent Claim
50 words
A method for developing-treatment, comprising the steps of: the first step of forming a liquid film on a surface of a photoresist applied onto a semiconductor substrate and pattern-exposed to light; and the second step of replacing the liquid film with a developer to develop the photoresist with the developer.
Claim 3
Dependent Claim
26 words
A method for developing-treatment according to claim 1, wherein in the first step the liquid film is formed of pure water for washing the semiconductor substrate.
Claim 4
Dependent Claim
41 words
A method for developing-treatment according to claim 1, wherein in the first step the liquid film is formed of an aqueous solution containing at least one selected from the group consisting of organic ammonium hydroxide, metal hydroxide, alcohols, amines and surfactants.
Claim 5
Independent Claim
179 words
A method for developing-treatment comprising the steps of: rotating a semiconductor wafer at a low speed and simultaneously supplying pure water onto a surface of a photoresist on the semiconductor; stopping rotating the semiconductor wafer and stopping supplying the pure water to form a pure water film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the pure water film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the pure water gradually, thereby replacing the pure water film formed on the surface of the photoresist with the developer; rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist; supplying pure water onto the surface of the semiconductor wafer to wash it; and rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
Claim 6
Independent Claim
179 words
A method for developing-treatment comprising the steps of: rotating a semiconductor wafer at a low speed and simultaneously supplying pure water onto a surface of a photoresist on the semiconductor; stopping rotating the semiconductor wafer and stopping supplying the pure water to form a pure water film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the pure water film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the pure water gradually, thereby replacing the pure water film formed on the surface of the photoresist with the developer; rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist; supplying pure water onto the surface of the semiconductor wafer to wash it; and rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
Claim 7
Independent Claim
197 words
A method for developing-treatment comprising the steps of: rotating a semiconductor wafer at a low speed and simultaneously supplying a surface of a photoresist on the semiconductor an aqueous solution containing at least one selected from the group of organic ammonium hydroxide, metal hydroxide, alcohols, and amines and surfactants; stopping rotating the semiconductor wafer and stopping supplying the aqueous solution to form an aqueous solution film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the aqueous solution film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the aqueous solution, thereby replacing the aqueous solution film formed on the surface of the photoresist with the developer; rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist; supplying pure water onto the surface of the semiconductor wafer to wash it; and rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
Claim 8
Independent Claim
197 words
A method for developing-treatment comprising the steps of: rotating a semiconductor wafer at a low speed and simultaneously supplying a surface of a photoresist on the semiconductor an aqueous solution containing at least one selected from the group of organic ammonium hydroxide, metal hydroxide, alcohols, and amines and surfactants; stopping rotating the semiconductor wafer and stopping supplying the aqueous solution to form an aqueous solution film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the aqueous solution film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the aqueous solution, thereby replacing the aqueous solution film formed on the surface of the photoresist with the developer; rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist; supplying pure water onto the surface of the semiconductor wafer to wash it; and rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
Claim 9
Independent Claim
164 words
A method for manufacturing a semiconductor device comprising the steps of: applying a photoresist onto a semiconductor wafer; exposing the photoresist to light so as to transcribe a circuit pattern; rotating the semiconductor wafer at a low speed while supplying pure water onto a surface of the photoresist; stopping rotating the semiconductor wafer and stopping supplying the pure water to form a pure water film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the pure water film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the pure water gradually, thereby replacing the water film formed on the surface of the photoresist with the developer; and rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist.
Claim 10
Independent Claim
164 words
A method for manufacturing a semiconductor device comprising the steps of: applying a photoresist onto a semiconductor wafer; exposing the photoresist to light so as to transcribe a circuit pattern; rotating the semiconductor wafer at a low speed while supplying pure water onto a surface of the photoresist; stopping rotating the semiconductor wafer and stopping supplying the pure water to form a pure water film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the pure water film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the pure water gradually, thereby replacing the water film formed on the surface of the photoresist with the developer; and rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist.
Claim 11
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 6, which further comprises, after the step including developing the photoresist, the step of supplying pure water onto the surface of the semiconductor wafer to wash it.
Claim 12
Dependent Claim
53 words
A method for manufacturing a semiconductor device according to claim 7, which further comprises, after the step of supplying pure water onto the surface of the semiconductor wafer to wash it, the step of rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
Claim 13
Independent Claim
185 words
A method for manufacturing a semiconductor device comprising the steps of: applying a photoresist onto a semiconductor wafer; exposing the photoresist to light so as to transcribe a circuit pattern; rotating the semiconductor wafer at a low speed while supplying a surface of the photoresist an aqueous solution containing at least one selected from the group consisting of organic ammonium hydroxide, metal hydroxide, alcohols, and amines and surfactants; stopping rotating the semiconductor wafer and stopping supplying the aqueous solution to form an aqueous solution film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the aqueous solution film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the aqueous solution gradually, thereby replacing the aqueous solution film formed on the surface of the photoresist with the developer; and rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist.
Claim 14
Independent Claim
185 words
A method for manufacturing a semiconductor device comprising the steps of: applying a photoresist onto a semiconductor wafer; exposing the photoresist to light so as to transcribe a circuit pattern; rotating the semiconductor wafer at a low speed while supplying a surface of the photoresist an aqueous solution containing at least one selected from the group consisting of organic ammonium hydroxide, metal hydroxide, alcohols, and amines and surfactants; stopping rotating the semiconductor wafer and stopping supplying the aqueous solution to form an aqueous solution film on the surface of the photoresist by surface tension; spraying a developer in a mist form on the surface of the aqueous solution film and simultaneously rotating the semiconductor wafer at a high speed to scatter off the aqueous solution gradually, thereby replacing the aqueous solution film formed on the surface of the photoresist with the developer; and rotating the semiconductor wafer at a low speed while spraying the developer in a mist form on the surface of the photoresist to strain and stretch the developer, in a liquid form, on the surface of the photoresist, thereby developing the photoresist.
Claim 15
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 9, which further comprises, after the step including developing the photoresist, the step of supplying pure water onto the surface of the semiconductor wafer to wash it.
Claim 16
Dependent Claim
53 words
A method for manufacturing a semiconductor device according to claim 10, which further comprises, after the step of supplying pure water onto the surface of the semiconductor wafer to wash it, the step of rotating the semiconductor wafer at a high speed to scatter off the pure water, thereby drying the semiconductor wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |