Patent US5883423A successfully refreshed from Google Patents.
US5883423A
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Decoupling capacitor for integrated circuit signal driver
Assignee: National Semiconductor Corp
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Filing: 1996-02-23
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Granted: 1999-03-16
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Expires: 2016-02-23
Abstract
Abstract A decoupling capacitor for an integrated circuit and method of forming the same. The decoupling capacitor includes a p-channel device having first and second p-type doped diffusion regions, a device channel region therebetween, a device gate overlying the device channel region, and a gate insulator separating the device gate and channel region. The first and second diffusion regions are electrically connected to a positive power supply, and the device gate is electrically connected to a negative power supply. The decoupling capacitor may be formed proximate a signal driver in the integrated circuit. The decoupling capacitor may be formed without additional, expensive semiconductor fabrication steps and operates to minimize noise in the circuit.
Inventors
- 👤 Nital Patwa
- 👤 Jayne Brown-West
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:01
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/857
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
126 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; and, an integral decoupling capacitor formed in said semiconductor substrate and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said integral decoupling capacitor including; a first p-type doped diffusion region electrically connected to said positive power supply connection of said decoupled circuitry; a second p-type doped diffusion region electrically connected to said positive power supply connection of said decoupled circuitry; a channel region disposed between said first and second p-type doped diffusion regions; a gate overlying said channel region and electrically connected to said negative power supply connection of said decoupled circuitry; and, a gate insulator separating said gate and said channel region.
Claim 2
Dependent Claim
126 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; and, an integral decoupling capacitor formed in said semiconductor substrate and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said integral decoupling capacitor including; a first p-type doped diffusion region electrically connected to said positive power supply connection of said decoupled circuitry; a second p-type doped diffusion region electrically connected to said positive power supply connection of said decoupled circuitry; a channel region disposed between said first and second p-type doped diffusion regions; a gate overlying said channel region and electrically connected to said negative power supply connection of said decoupled circuitry; and, a gate insulator separating said gate and said channel region.
Claim 3
Dependent Claim
31 words
The integrated circuit of claim 1 wherein said semiconductor substrate is a p-type substrate and said integral decoupling capacitor is formed in an n-type doped implant well in said p-type substrate.
Claim 4
Dependent Claim
14 words
The integrated circuit of claim 1 wherein said semiconductor substrate is an n-type substrate.
Claim 5
Dependent Claim
23 words
The integrated circuit of claim 2 wherein said implant well is electrically connected to said positive power supply connection of said decoupled circuitry.
Claim 6
Dependent Claim
15 words
The integrated circuit of claim 1 wherein said decoupled circuitry comprises a signal driver circuit.
Claim 7
Dependent Claim
37 words
The integrated circuit of claim 2 wherein said decoupled circuitry has at least one p-channel transistor and wherein said integral decoupling capacitor and said at least one p-channel transistor are formed in said n-type doped implant well.
Claim 8
Dependent Claim
121 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; an integral decoupling capacitor formed in said semiconductor substrate and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said integral decoupling capacitor including; a plurality of p-type doped diffusion regions electrically connected to said positive power supply connection of said decoupled circuitry; a plurality of channel regions disposed between each of said plurality of p-type doped diffusion regions; a gate overlying each of said plurality of channel regions and electrically connected to said negative power supply connection of said decoupled circuitry; and, a plurality of gate insulators separating said gate and each of said plurality of channel regions.
Claim 9
Dependent Claim
121 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; an integral decoupling capacitor formed in said semiconductor substrate and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said integral decoupling capacitor including; a plurality of p-type doped diffusion regions electrically connected to said positive power supply connection of said decoupled circuitry; a plurality of channel regions disposed between each of said plurality of p-type doped diffusion regions; a gate overlying each of said plurality of channel regions and electrically connected to said negative power supply connection of said decoupled circuitry; and, a plurality of gate insulators separating said gate and each of said plurality of channel regions.
Claim 10
Dependent Claim
30 words
The integrated circuit of claim 7 wherein said substrate is a p-type substrate and said integral decoupling capacitor is formed in an n-type doped implant well in said p-type substrate.
Claim 11
Dependent Claim
13 words
The integrated circuit of claim 7 wherein said substrate is a n-type substrate.
Claim 12
Dependent Claim
48 words
The integrated circuit of claim 7 wherein each of said plurality of p-type doped diffusion regions are approximately 1 to 4 micrometers by approximately 10 to 20 micrometers and each of said plurality of channel regions are approximately 1 to 4 micrometers by approximately 10 to 20 micrometers.
Claim 13
Dependent Claim
32 words
The integrated circuit of claim 7 wherein said positive power supply connection of said decoupled circuitry and said plurality of p-type doped diffusion regions are electrically connected by a first conductive layer.
Claim 14
Dependent Claim
19 words
The integrated circuit of claim 11 wherein said first conductive layer comprises a substantially continuous sheet of conductive material.
Claim 15
Dependent Claim
37 words
The integrated circuit of claim 12 wherein said electrical connection between said substantially continuous sheet of conductive material in said first conductive layer and said plurality of p-type doped diffusion regions comprises a plurality of contact openings.
Claim 16
Dependent Claim
27 words
The integrated circuit of claim 7 wherein said negative power supply connection of said decoupled circuitry and said gate are electrically connected by a second conductive layer.
Claim 17
Dependent Claim
19 words
The integrated circuit of claim 14 wherein said second conductive layer comprises a substantially continuous sheet of conductive material.
Claim 18
Dependent Claim
31 words
The integrated circuit of claim 7 further comprising an n-type doped diffusion region encircling said integral decoupling capacitor and electrically connected to said positive power supply connection of said decoupled circuitry.
Claim 19
Dependent Claim
15 words
The integrated circuit of claim 7 wherein said decoupled circuitry is a signal driver circuit.
Claim 20
Dependent Claim
37 words
The integrated circuit of claim 8 wherein said decoupled circuitry has at least one p-channel transistor and wherein said integral decoupling capacitor and said at least one p-channel transistor are formed in said n-type doped implant well.
Claim 21
Dependent Claim
122 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; a plurality of integral decoupling capacitors electrically connected in parallel with each other and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said plurality of integral decoupling capacitors including; a plurality of p-type doped diffusion regions connected to said positive power supply connection of said decoupled circuitry; a plurality of channel regions disposed between each of said plurality of p-type doped diffusion regions; a gate overlying each of said channel regions connected to said negative power supply connection of said decoupled circuitry; and, a plurality of gate insulators separating said gate and each of said plurality of channel regions.
Claim 22
Dependent Claim
122 words
An integrated circuit comprising: a semiconductor substrate; decoupled circuitry formed in said semiconductor substrate; a plurality of integral decoupling capacitors electrically connected in parallel with each other and disposed in close proximity to a positive and a negative power supply connection of said decoupled circuitry, said plurality of integral decoupling capacitors including; a plurality of p-type doped diffusion regions connected to said positive power supply connection of said decoupled circuitry; a plurality of channel regions disposed between each of said plurality of p-type doped diffusion regions; a gate overlying each of said channel regions connected to said negative power supply connection of said decoupled circuitry; and, a plurality of gate insulators separating said gate and each of said plurality of channel regions.
Claim 23
Dependent Claim
33 words
The integrated circuit of claim 19 wherein said semiconductor substrate is a p-type substrate and said plurality of integral decoupling capacitors are formed in a n-type doped implant well in said p-type substrate.
Claim 24
Dependent Claim
14 words
The integrated circuit of claim 19 wherein said semiconductor substrate is an n-type substrate.
Claim 25
Dependent Claim
35 words
The integrated circuit of claim 19 further comprising an n-type doped diffusion region electrically connected to said positive power supply connection of said decoupled circuitry and encircling each of said plurality of integral decoupling capacitors.
Claim 26
Dependent Claim
15 words
The integrated circuit of claim 19 wherein said decoupled circuitry is a signal driver circuit.
Claim 27
Dependent Claim
39 words
The integrated circuit of claim 20 wherein said decoupled circuitry has at least one p-channel transistor and wherein said plurality of integral decoupling capacitors and said at least one p-channel transistor are formed in said n-type doped implant well.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-03-15 | 2002-09-14 | 2003-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-15 | 2006-09-14 | 2007-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-15 | 2010-09-14 | 2011-03-16 | $7700.00 | Window Closed / Lapsed |