CMOS input buffer with switched capacitor reference voltage generator

Claim 2

A circuit for converting logic states compatible to a first set of signal levels to corresponding logic states compatible to a second set of signal levels in a metal-oxide semiconductor, comprising: a comparator coupled to receive a reference voltage and also coupled to receive said first set of signal levels for comparing said first set of signal levels to said reference voltage; said comparator providing said second set of signals as its output, said output having a first logic state if a voltage value of said first set of signal levels is greater than said reference voltage, and a second logic state if said voltage value is less than said reference voltage a switched-capacitor voltage generator coupled to said comparator for generating said reference voltage; said switched capacitor voltage generator being comprised of a first and second capacitors, wherein said first capacitor is charged during a first time period and said second capacitor is discharged also during said first time period; during a second time period, said first and second capacitors are coupled together wherein charges from said first capacitor are distributed between said first and second capacitors, such that a ratio of capacitance of said first and second capacitors determines said reference voltage; one of said first and second capacitors being of an n-type device and the other of said first and second capacitors being of a p-type device such that said n-type and p-type device combination operates substantially independent of temperature and process variations.

Claim 3

The circuit of claim 1, wherein said first set of signal levels are compatible with transistor-transistor logic (TTL) devices, and said second set of signal levels are compatible with complementary metal-oxide semiconductor (CMOS) devices.

Claim 4

A circuit for converting logic states compatible to a first set of signal levels to corresponding logic states compatible to complementary metal-oxide-semiconductor (CMOS) signal levels, comprising: a comparator coupled to receive an input voltage of said first set of signal levels and generating output signal levels compatible with said CMOS and corresponding to said first set of signal levels; said comparator generating one CMOS logic state when said input voltage is greater than a predetermined reference value and generating a second CMOS logic state when said input level is less than said predetermined reference level; a voltage generator coupled to said comparator for generating a reference voltage which determines said predetermined reference level; said voltage generator comprised of a first and second capacitors, wherein said first capacitor is charged during a first time period and said second capacitor is discharged also during said first time period; during a second time period, said first and second capacitors are coupled together wherein charges from said first capacitors are distributed between said first and second capacitors, such that a ratio of capacitance of said first and second capacitors determines said reference voltage said first capacitor being comprised of a plurality of n-type unit capacitors and said second capacitor being comprised of a plurality of p-type unit capacitors wherein each of said n-type and p-type unit capacitors has predetermined fixed dimensions to reduce variations when determining said ratio of capacitance of said first and second capacitors.

Claim 5

A circuit for converting logic states compatible to a first set of signal levels to corresponding logic states compatible to complementary metal-oxide-semiconductor (CMOS) signal levels, comprising: a comparator coupled to receive an input voltage of said first set of signal levels and generating output signal levels compatible with said CMOS and corresponding to said first set of signal levels; said comparator generating one CMOS logic state when said input voltage is greater than a predetermined reference value and generating a second CMOS logic state when said input level is less than said predetermined reference level; a voltage generator coupled to said comparator for generating a reference voltage which determines said predetermined reference level; said voltage generator comprised of a first and second capacitors, wherein said first capacitor is charged during a first time period and said second capacitor is discharged also during said first time period; during a second time period, said first and second capacitors are coupled together wherein charges from said first capacitors are distributed between said first and second capacitors, such that a ratio of capacitance of said first and second capacitors determines said reference voltage said first capacitor being comprised of a plurality of n-type unit capacitors and said second capacitor being comprised of a plurality of p-type unit capacitors wherein each of said n-type and p-type unit capacitors has predetermined fixed dimensions to reduce variations when determining said ratio of capacitance of said first and second capacitors.

Claim 6

The circuit of claim 3, wherein a second p-type capacitor and a second n-type capacitor are coupled to a common junction of said first and second capacitors for maintaining a steady value of said reference voltage.

Claim 7

The circuit of claim 4, wherein a finite-state machine controls sequencing of said time periods.

Claim 8

The circuit of claim 5, wherein said first set of signals are transistor-transistor logic (TTL) compatible.

Claim 9

A complementary-metal-oxide semiconductor (CMOS) buffer circuit for converting TTL logic levels to corresponding CMOS compatible logic levels, wherein a transition of said TTL signal is determined by a predetermined reference level, comprising: a comparator coupled to receive an input signal having said TTL logic levels and generating an output signal having said corresponding CMOS compatible logic levels, which transition point depends on a value of said input signal in comparison to said predetermined reference level; a switched-capacitor voltage generator for providing a reference voltage which determines said reference level, comprising: (a) a first switch coupled between a supply source and a first node; (b) a second switch coupled between said first node and a second node; (c) a third switch coupled between said second node and an output node; (d) a fourth switch coupled between said second node and a supply return; (e) a first capacitor coupled between said first node and said return; (f) a second capacitor coupled between said second node and said supply source; (g) a third capacitor coupled between said output node and said supply source; (h) a fourth capacitor coupled between said output node and said return; said first and fourth switches being closed during a first time period to charge said first capacitor and discharge said second capacitor; said first and fourth switches being opened and said second switch being closed during a second time period, such that charges on said first capacitor are distributed between said first and said second capacitors, wherein a voltage of said second node is determined by a ratio of said second and first capacitors multiplied times a value of said supply voltage to provide said reference voltage; and during a third time period said third switch is closed to pass said reference voltage to said output node.

Claim 10

A complementary-metal-oxide semiconductor (CMOS) buffer circuit for converting TTL logic levels to corresponding CMOS compatible logic levels, wherein a transition of said TTL signal is determined by a predetermined reference level, comprising: a comparator coupled to receive an input signal having said TTL logic levels and generating an output signal having said corresponding CMOS compatible logic levels, which transition point depends on a value of said input signal in comparison to said predetermined reference level; a switched-capacitor voltage generator for providing a reference voltage which determines said reference level, comprising: (a) a first switch coupled between a supply source and a first node; (b) a second switch coupled between said first node and a second node; (c) a third switch coupled between said second node and an output node; (d) a fourth switch coupled between said second node and a supply return; (e) a first capacitor coupled between said first node and said return; (f) a second capacitor coupled between said second node and said supply source; (g) a third capacitor coupled between said output node and said supply source; (h) a fourth capacitor coupled between said output node and said return; said first and fourth switches being closed during a first time period to charge said first capacitor and discharge said second capacitor; said first and fourth switches being opened and said second switch being closed during a second time period, such that charges on said first capacitor are distributed between said first and said second capacitors, wherein a voltage of said second node is determined by a ratio of said second and first capacitors multiplied times a value of said supply voltage to provide said reference voltage; and during a third time period said third switch is closed to pass said reference voltage to said output node.

Claim 11

The CMOS buffer circuit of claim 7, wherein said first capacitor is an n-type device, and said second capacitor is a p-type device, such that said two different types of devices operate to compensate each other, and said voltage generator is substantially immune to process and temperature variations.

Claim 12

The CMOS buffer circuit of claim 8, wherein a finite-state machine controls sequencing of said time periods.

Claim 13

The CMOS buffer circuit of claim 9, further comprising a plurality of said comparators coupled to said switched-capacitor voltage generator, each said comparator having its inputs and output signals.