Method for producing semiconductor device

Claim 1

A method for producing a semiconductor device comprising the steps of: forming a wiring or an electrode comprising an anodizable material; selectively forming a mask on only a portion of the wiring or the electrode; forming an anodic oxide film on a surface of the wiring or the electrode other than the portion on which the mask is formed, by anodizing the wiring or the electrode; forming an interlayer insulating film comprising silicon oxide to cover the wiring or the electrode after the forming of said anodic oxide film; and forming a contact hole through said interlayer insulating film by etching with an etchant including hydrofluoric acid whereby said portion of the wiring or the electrode is exposed within said contact hole.

Claim 2

A method for producing a semiconductor device comprising the steps of: forming a wiring or an electrode comprising an anodizable material; selectively forming a mask on only a portion of the wiring or the electrode; forming an anodic oxide film on a surface of the wiring or the electrode other than the portion on which the mask is formed, by anodizing the wiring or the electrode; forming an interlayer insulating film comprising silicon oxide to cover the wiring or the electrode after the forming of said anodic oxide film; and forming a contact hole through said interlayer insulating film by etching with an etchant including hydrofluoric acid whereby said portion of the wiring or the electrode is exposed within said contact hole.

Claim 4

A method for producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor; forming a wiring or an electrode comprising an anodizable material on the insulating film; selectively forming a mask on only a portion of the wiring or the electrode leaving another portion without said mask thereon; forming an anodic oxide film on said another portion of the wiring or the electrode other than the portion on which the mask is formed, by anodizing another portion of the wiring or the electrode; removing the mask after the anodizing step to expose said portion of the wiring or the electrode; forming another insulating film to cover the wiring or the electrode after the removing step; and simultaneously forming a first contact hole for the semiconductor and a second contact hole for the wiring or the electrode through said another insulating film, wherein said portion of the wiring or the electrode is exposed within said second contact hole.

Claim 5

A method for producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor; forming a wiring or an electrode comprising an anodizable material on the insulating film; selectively forming a mask on only a portion of the wiring or the electrode leaving another portion without said mask thereon; forming an anodic oxide film on said another portion of the wiring or the electrode other than the portion on which the mask is formed, by anodizing another portion of the wiring or the electrode; removing the mask after the anodizing step to expose said portion of the wiring or the electrode; forming another insulating film to cover the wiring or the electrode after the removing step; and simultaneously forming a first contact hole for the semiconductor and a second contact hole for the wiring or the electrode through said another insulating film, wherein said portion of the wiring or the electrode is exposed within said second contact hole.

Claim 6

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; forming a mask on a portion of an upper surface of the gate electrode; anodizing the gate electrode to form an anodic oxide layer around the gate electrode; removing the mask after the anodizing step; forming source and drain regions in the semiconductor region; forming an insulating film to cover the gate electrode and the semiconductor region; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 7

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; forming a mask on a portion of an upper surface of the gate electrode; anodizing the gate electrode to form an anodic oxide layer around the gate electrode; removing the mask after the anodizing step; forming source and drain regions in the semiconductor region; forming an insulating film to cover the gate electrode and the semiconductor region; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 11

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; anodizing the gate electrode to form a first anodic oxide layer on an upper surface of the gate electrode; anodizing the gate electrode to form a second anodic oxide layer on side surfaces of the gate electrode after the anodizing step; forming source and drain regions in the semiconductor region using the gate electrode and the second anodic oxide layer as masks; removing the second anodic oxide layer and a portion of the first anodic oxide layer after forming the source and drain regions; forming a mask on a portion of a surface of the first anodic oxide layer after the removing step; anodizing the gate electrode to form a third anodic oxide layer around the gate electrode; removing the mask after forming the third anodic oxide layer; forming lightly doped drain regions using the gate electrode and the third anodic oxide film as masks; forming an insulating film to cover the gate electrode and the gate insulating film; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 12

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; anodizing the gate electrode to form a first anodic oxide layer on an upper surface of the gate electrode; anodizing the gate electrode to form a second anodic oxide layer on side surfaces of the gate electrode after the anodizing step; forming source and drain regions in the semiconductor region using the gate electrode and the second anodic oxide layer as masks; removing the second anodic oxide layer and a portion of the first anodic oxide layer after forming the source and drain regions; forming a mask on a portion of a surface of the first anodic oxide layer after the removing step; anodizing the gate electrode to form a third anodic oxide layer around the gate electrode; removing the mask after forming the third anodic oxide layer; forming lightly doped drain regions using the gate electrode and the third anodic oxide film as masks; forming an insulating film to cover the gate electrode and the gate insulating film; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 14

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; forming a mask on only a portion of an upper surface of the gate electrode; anodizing the gate electrode to form an anodic oxide layer around the gate electrode; removing the mask after the anodizing step; forming source and drain regions in the semiconductor region; forming an insulating film to cover the gate electrode and the semiconductor region; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 15

A method for producing a semiconductor device comprising the steps of: forming a gate insulating film on a semiconductor region; forming a gate electrode comprising aluminum on the gate insulating film; forming a mask on only a portion of an upper surface of the gate electrode; anodizing the gate electrode to form an anodic oxide layer around the gate electrode; removing the mask after the anodizing step; forming source and drain regions in the semiconductor region; forming an insulating film to cover the gate electrode and the semiconductor region; and forming contact holes for the source and drain regions and a contact hole for the gate electrode by etching using a desired etchant.

Claim 20

A method of manufacturing a semiconductor device comprising: forming a semiconductor layer over a substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film comprising an anodizable material over said semiconductor layer and said gate insulating film; patterning said conductive film into a gate electrode by using a first mask, said gate electrode being located over said semiconductor layer with said gate insulating film interposed therebetween; anodically oxidizing only side surfaces of said gate electrode by using said first mask in order to form a first anodic oxide film adjacent to sidewalls of said gate electrode wherein said first anodic oxide film is used to define source and drain regions within said semiconductor layer; forming a second mask on only a selected portion of said gate electrode after the formation of said first anodic oxide film; anodically oxidizing surfaces of said gate electrode to form a second anodic oxide film, wherein said selected portion is prevented from being oxidized by said second mask; forming an interlayer insulating film over said semiconductor layer and said gate electrode after the forming of said second anodic oxide film; forming at least one contact hole through said interlayer insulating film in correspondence with said selected portion of the gate electrode; and forming a wiring on said interlayer insulating film, said wiring electrically connected to said selected portion of the gate electrode through said contact hole.

Claim 21

A method of manufacturing a semiconductor device comprising: forming a semiconductor layer over a substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film comprising an anodizable material over said semiconductor layer and said gate insulating film; patterning said conductive film into a gate electrode by using a first mask, said gate electrode being located over said semiconductor layer with said gate insulating film interposed therebetween; anodically oxidizing only side surfaces of said gate electrode by using said first mask in order to form a first anodic oxide film adjacent to sidewalls of said gate electrode wherein said first anodic oxide film is used to define source and drain regions within said semiconductor layer; forming a second mask on only a selected portion of said gate electrode after the formation of said first anodic oxide film; anodically oxidizing surfaces of said gate electrode to form a second anodic oxide film, wherein said selected portion is prevented from being oxidized by said second mask; forming an interlayer insulating film over said semiconductor layer and said gate electrode after the forming of said second anodic oxide film; forming at least one contact hole through said interlayer insulating film in correspondence with said selected portion of the gate electrode; and forming a wiring on said interlayer insulating film, said wiring electrically connected to said selected portion of the gate electrode through said contact hole.

Claim 26

A method of manufacturing a semiconductor device comprising: forming a semiconductor layer over a substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film comprising an anodizable material over said semiconductor layer and said gate insulating film; oxidizing an entire upper surface of said conductive film to form an oxide insulating film; forming a first mask on said oxide insulating film; patterning said conductive film into a gate electrode by using said first mask, said gate electrode being located over said semiconductor layer with said gate insulating film interposed therebetween; anodically oxidizing only side surfaces of said gate electrode by using said first mask in order to form a first anodic oxide film adjacent to sidewalls of said gate electrode wherein said first anodic oxide film is used to define source and drain regions within said semiconductor layer; forming a second mask on only a selected portion of said gate electrode after the formation of said first anodic oxide film; anodically oxidizing surfaces of said gate electrode to form a second anodic oxide film, wherein said selected portion is prevented from being oxidized by said second mask; forming an interlayer insulating film over said semiconductor layer and said gate electrode after the formation of said second anodic oxide film; forming at least one contact hole through said interlayer insulating film and said oxide insulating film to expose said selected portion of the gate electrode; and forming a wiring on said interlayer insulating film, said wiring electrically connected to said selected portion of the gate electrode through said contact hole.

Claim 27

A method of manufacturing a semiconductor device comprising: forming a semiconductor layer over a substrate; forming a gate insulating film on said semiconductor layer; forming a conductive film comprising an anodizable material over said semiconductor layer and said gate insulating film; oxidizing an entire upper surface of said conductive film to form an oxide insulating film; forming a first mask on said oxide insulating film; patterning said conductive film into a gate electrode by using said first mask, said gate electrode being located over said semiconductor layer with said gate insulating film interposed therebetween; anodically oxidizing only side surfaces of said gate electrode by using said first mask in order to form a first anodic oxide film adjacent to sidewalls of said gate electrode wherein said first anodic oxide film is used to define source and drain regions within said semiconductor layer; forming a second mask on only a selected portion of said gate electrode after the formation of said first anodic oxide film; anodically oxidizing surfaces of said gate electrode to form a second anodic oxide film, wherein said selected portion is prevented from being oxidized by said second mask; forming an interlayer insulating film over said semiconductor layer and said gate electrode after the formation of said second anodic oxide film; forming at least one contact hole through said interlayer insulating film and said oxide insulating film to expose said selected portion of the gate electrode; and forming a wiring on said interlayer insulating film, said wiring electrically connected to said selected portion of the gate electrode through said contact hole.