US5580800A
Expired / Lapsed
US
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Method of patterning aluminum containing group IIIb Element
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-03-15
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Granted: 1996-12-03
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Expires: 2014-03-15
Abstract
Abstract A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.
Inventors
- 👤 Hongyong Zhang
- 👤 Yasuhiko Takemura
- 👤 Hideki Uochi
- 👤 Itaru Koyama
- 👤 Minoru Miyazaki
- 👤 Akane Murakami
- 👤 Toshimitsu Konuma
- 👤 Akira Sugawara
- 👤 Yukiko Uehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
49 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; patterning said aluminum film by etching; and removing a residue comprising said Group IIIb element produced by said patterning step.
Claim 2
Independent Claim
49 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; patterning said aluminum film by etching; and removing a residue comprising said Group IIIb element produced by said patterning step.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said Group IIIb element is contained in said aluminum film at 0.05 wt % to 0.40 wt %.
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein said Group IIIb element is selected from the group consisting of Sc, Y, a lanthanoid and an actinoid.
Claim 5
Independent Claim
58 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; patterning said aluminum film by etching; removing a residue comprising said Group IIIb element produced by said patterning step; and anodic oxidizing a surface of the patterned aluminum film.
Claim 6
Independent Claim
58 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; patterning said aluminum film by etching; removing a residue comprising said Group IIIb element produced by said patterning step; and anodic oxidizing a surface of the patterned aluminum film.
Claim 7
Dependent Claim
24 words
The method of claim 4, wherein said Group IIIb element is contained in said aluminum film at 0.05 wt % to 0.40 wt %.
Claim 8
Dependent Claim
24 words
The method of claim 4, wherein said Group IIIb element is selected from the group consisting of Sc, Y, a lanthanoid and an actinoid.
Claim 9
Independent Claim
54 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; forming a gate electrode by etching said aluminum film; and removing a residue comprising said Group IIIb element produced by said gate electrode forming step.
Claim 10
Independent Claim
54 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; forming a gate electrode by etching said aluminum film; and removing a residue comprising said Group IIIb element produced by said gate electrode forming step.
Claim 11
Dependent Claim
24 words
The method of claim 4, wherein said Group IIIb element is selected from the group consisting of Sc, Y, a lanthanoid and an actinoid.
Claim 12
Independent Claim
62 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; forming a gate electrode by etching said aluminum film; removing a residue comprising said Group IIIb element produced by said gate electrode forming step; and anodically oxidizing a surface of said gate electrode.
Claim 13
Independent Claim
62 words
A method of forming a transistor comprising: forming an aluminum film having a thickness of 2000 to 10000 Å and containing a Group IIIb element of the Periodic Table; forming a gate electrode by etching said aluminum film; removing a residue comprising said Group IIIb element produced by said gate electrode forming step; and anodically oxidizing a surface of said gate electrode.
Claim 14
Dependent Claim
24 words
The method of claim 9, wherein said Group IIIb element is contained in said aluminum film at 0.05 wt % to 0.40 wt %.
Claim 15
Dependent Claim
24 words
The method of claim 9, wherein said Group IIIb element is selected from the group consisting of Sc, Y, a lanthanoid and an actinoid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |