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US5879956A
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Method of forming a perovskite structure semiconductor capacitor
Assignee: SK Hynix Inc
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Filing: 1996-11-26
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Granted: 1999-03-09
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Expires: 2016-11-26
Abstract
Abstract A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed therethrough. Thereafter, a composite first electrode composed of a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are formed on a portion of the insulation film including the contact hole. A Perovskite structure dielectric film is formed on the first electrode, and a Perovskite structure second electrode on the dielectric film is formed. The capacitor has a high dielectric constant approaching that of an epitaxial structure of a mono-crystalline substrate, and interfaces with more stabilized grain boundaries than those of a poly-crystalline structure. Hence, the reduction of trapped charge density between interfaces of the electrodes and dielectric films leads to a decreased leakage current and an improved TDDB (time-dependent direct breakdown) property.
Inventors
- 👤 Jeong-Min Seon
- 👤 Hwan-Myeong Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
242 words
A method of making a capacitor comprising the steps of: forming on a substrate an insulation film having a first contact hole therein so that a surface of said substrate is exposed therethrough; forming a first electrode, wherein a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are sequentially stacked on a portion of said insulation film including said first contact hole; forming first side wall spacers on each side of said first electrode; forming each of a Perovskite structure first dielectric film, a Perovskite structure second electrode and a Perovskite structure second dielectric film sequentially on said first insulation film including said first electrode and said first side wall spacers; etching each of said first dielectric film, said second electrode and said second dielectric film to form a second contact hole, so that a portion of said first electrode is exposed therethrough; forming second side wall spacers on a wall of said second contact hole; forming a Perovskite structure third electrode and a second insulation film sequentially on said second dielectric film including said second contact hole; etching each of said second insulation film, said third electrode and said second dielectric film, to form a third contact hole so that a portion of said second electrode is exposed therethrough; forming third side wall spacers on each wall of said third contact hole; and forming a fourth electrode on said second insulation film including said third contact hole.
Claim 2
Independent Claim
242 words
A method of making a capacitor comprising the steps of: forming on a substrate an insulation film having a first contact hole therein so that a surface of said substrate is exposed therethrough; forming a first electrode, wherein a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are sequentially stacked on a portion of said insulation film including said first contact hole; forming first side wall spacers on each side of said first electrode; forming each of a Perovskite structure first dielectric film, a Perovskite structure second electrode and a Perovskite structure second dielectric film sequentially on said first insulation film including said first electrode and said first side wall spacers; etching each of said first dielectric film, said second electrode and said second dielectric film to form a second contact hole, so that a portion of said first electrode is exposed therethrough; forming second side wall spacers on a wall of said second contact hole; forming a Perovskite structure third electrode and a second insulation film sequentially on said second dielectric film including said second contact hole; etching each of said second insulation film, said third electrode and said second dielectric film, to form a third contact hole so that a portion of said second electrode is exposed therethrough; forming third side wall spacers on each wall of said third contact hole; and forming a fourth electrode on said second insulation film including said third contact hole.
Claim 3
Dependent Claim
47 words
The method of claim 1, wherein said Perovskite structure conductive seed layer is formed of one selected from the group comprising YBa 2 Cu 3 O 7-x , La 1-x Sr x Co 1 O 3 (x=0.5) and La 2-x Sr x Cu 1 O 4 (x=0.15).
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said anti-oxide film is formed of RuOx.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein said conductive plug and anti-oxide film are poly-crystalline.
Claim 6
Dependent Claim
54 words
The method of claim 1, wherein said Perovskite structure second and third electrodes each consist of one selected from the group comprising CaRuO 3 , SrRuO 3 , YBa 2 Cu 3 O 7-x , La 1-x Sr x Co 1 O 3 (x=0.5) and La 2-x Sr x Cu 1 O 4 (x=0.15).
Claim 7
Dependent Claim
35 words
The method of claim 1, wherein said Perovskite structure first and second dielectric films each consist of one selected from the group comprising (Ba 0 .5, Sr 0 .5)TiO 3 and Pb(La, Zr)TiO 3 .
Claim 8
Dependent Claim
23 words
The method of claim 1, wherein said Perovskite structure conductive seed layer is formed at a temperature of 650° C. through 750° C.
Claim 9
Dependent Claim
32 words
The method of claim 1, wherein said Perovskite structure first and second dielectric films and said first to third electrodes are each formed at a temperature of 650° C. through 750° C.
References Cited (Backward Citations)
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