US5877077A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
Assignee: Telefonaktiebolaget LM Ericsson AB
•
Filing: 1996-01-17
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Granted: 1999-03-02
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Expires: 2016-01-17
Abstract
Abstract In a method of producing an ohmic contact to a p-type α-SiC layer in a semiconductor device, layers of aluminum, titanium and silicon are deposited on the α-SiC layer, and the deposited layers are annealed to convert at least a part of the deposited layers to aluminum-titanium-silicide.
Inventors
- 👤 Bertil Kronlund
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D64/60; H10D64/62; H10D8/00; H10D8/01; H10D8/043; H10D8/051; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
47 words
A method of producing an ohmic contact to a p-type α-SiC layer in a semiconductor device, comprising the steps of: depositing layers of aluminum, titanium and silicon on said α-SiC layer, and annealing said deposited layers to convert at least part of said deposited layers to aluminum-titanium-silicide.
Claim 2
Independent Claim
47 words
A method of producing an ohmic contact to a p-type α-SiC layer in a semiconductor device, comprising the steps of: depositing layers of aluminum, titanium and silicon on said α-SiC layer, and annealing said deposited layers to convert at least part of said deposited layers to aluminum-titanium-silicide.
Claim 3
Dependent Claim
40 words
A method as claimed in claim 1, wherein the depositing step comprises first depositing the aluminium layer on said α-SiC layer, then depositing the titanium layer on said aluminium layer, and finally depositing the silicon layer on said titanium layer.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 wherein the layers are deposited with a combined thickness of less than 300 nm.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 1, wherein the layers are annealed at a temperature of at least 900° C.
Claim 6
Dependent Claim
18 words
A method as claimed in claim 1, wherein the layers are annealed at a temperature of 950° C.
Claim 7
Dependent Claim
20 words
A method as claimed in claim 1, wherein the layers are annealed for a period of at least 200 s.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-01 | 2002-08-31 | 2003-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-01 | 2006-08-31 | 2007-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-01 | 2010-08-31 | 2011-03-02 | $7700.00 | Window Closed / Lapsed |