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US5871826A
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Proximity laser doping technique for electronic materials
Assignee: Thomson Licensing SAS
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Filing: 1996-05-30
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Granted: 1999-02-16
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Expires: 2016-05-30
Abstract
Abstract This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.
Inventors
- 👤 Ping Mei
- 👤 Rene A. Lujan
- 👤 James B. Boyce
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0186; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3416; H10P32/00; H10P32/10; H10P32/12; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10P32/174; H10P32/19; H10P95/00; H10P95/94; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
120 words
A method of doping a semiconductor receptor material with a donor material, the method comprising the steps of: providing a source plate; providing a source layer on one side of said source plate, said source layer containing said donor material and being absorptive of laser energy; placing said source plate in close proximity to said receptor material with said one side facing said receptor material; irradiating said source layer with a laser source passing through said source plate, said step of irradiating resulting in ablating said source layer and melting a region of said receptor material; introducing said donor material ablated from said source film into said region of said receptor material for altering an electrical characteristic of said region.
Claim 2
Independent Claim
120 words
A method of doping a semiconductor receptor material with a donor material, the method comprising the steps of: providing a source plate; providing a source layer on one side of said source plate, said source layer containing said donor material and being absorptive of laser energy; placing said source plate in close proximity to said receptor material with said one side facing said receptor material; irradiating said source layer with a laser source passing through said source plate, said step of irradiating resulting in ablating said source layer and melting a region of said receptor material; introducing said donor material ablated from said source film into said region of said receptor material for altering an electrical characteristic of said region.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said source film is placed upon a source plate, which is transparent to laser energy.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said laser source is a pulsed excimer laser.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said electrical characteristic is the conductivity of said semiconductor receptor material.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said semiconductor receptor material is silicon.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said donor material is an n-type dopant to said semiconductor receptor material.
Claim 8
Dependent Claim
11 words
The method of claim 6 wherein said n-type dopant is phosphorus.
Claim 9
Dependent Claim
11 words
The method of claim 1 wherein said donor material is hydrogen.
Claim 10
Dependent Claim
14 words
The method of claim 8 wherein said donor material is silicon nitride containing hydrogen.
Claim 11
Dependent Claim
63 words
The method of claim 1 comprising the further steps of: moving said laser source from a first location to subsequent locations in accordance with a predefined pattern; and irradiating said source film at each of said locations so as to introduce said donor material ablated from said source film into said region of said semiconductor receptor material in accordance with said predefined pattern.
Claim 12
Dependent Claim
58 words
The method of claim 1 comprising the further steps of: placing a mask with a pattern between said laser source and said source film, wherein said mask is opaque to laser energy; and transferring said donor material ablated from said source film in the unmasked portion of said source film into said region of said semiconductor receptor material.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
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