Method of producing an electro-optical device

Claim 1

A method for producing an electro-optical device in which an electro-optical material is put between a pair of substrates opposed to each other, at least a portion of opposing surfaces of the substrates is insulative, a plurality of source wirings and a plurality of gate wirings are formed crossing each other on the surface of one of the substrates and a transparent pixel electrode and a thin film transistor are formed at each of crossing points between the source wirings and the gate wirings, wherein the method comprises: a step C1 of forming a first metal film on the surface of the one substrate, a first photolithographic step C2 of patterning the first metal film to form a gate electrode and a gate wiring, a step C3 of forming a first insulator film, a semiconductor active film, an ohmic contact film and a metal film on the surface of the one substrate after the first photolithographic step, a second photolithographic step C4 of patterning the semiconductor active film, the ohmic contact and the metal film to form a patterned trilayer film portion above the gate electrode in a state isolated from other portions, a third photolithographic step C5 of patterning the first insulator film to form a contact hole reaching the gate wiring, a step C6 of forming a transparent conductive film for a transparent pixel electrode, a source electrode and a drain electrode on the surface of the substrate after the third photolithographic step, a fourth photolithographic step C7 of patterning the transparent conductive film to form a source electrode, a source wiring, a drain electrode and a transparent pixel electrode, and patterning the transparent conductive film, the metal layer and the ohmic contact film above the gate electrode to form a channel portion above the gate electrode, a step C8 of forming a passivation film on the surface of the one substrate after the fourth photolithographic step, and a fifth photolithographic step C9 of patterning the passivation film to remove a portion of the passivation film above the transparent pixel electrode and make a portion above the transparent pixel electrode light permeable and forming a contact hole for source wiring and gate wiring connection terminals.

Claim 2

A method for producing an electro-optical device in which an electro-optical material is put between a pair of substrates opposed to each other, at least a portion of opposing surfaces of the substrates is insulative, a plurality of source wirings and a plurality of gate wirings are formed crossing each other on the surface of one of the substrates and a transparent pixel electrode and a thin film transistor are formed at each of crossing points between the source wirings and the gate wirings, wherein the method comprises: a step C1 of forming a first metal film on the surface of the one substrate, a first photolithographic step C2 of patterning the first metal film to form a gate electrode and a gate wiring, a step C3 of forming a first insulator film, a semiconductor active film, an ohmic contact film and a metal film on the surface of the one substrate after the first photolithographic step, a second photolithographic step C4 of patterning the semiconductor active film, the ohmic contact and the metal film to form a patterned trilayer film portion above the gate electrode in a state isolated from other portions, a third photolithographic step C5 of patterning the first insulator film to form a contact hole reaching the gate wiring, a step C6 of forming a transparent conductive film for a transparent pixel electrode, a source electrode and a drain electrode on the surface of the substrate after the third photolithographic step, a fourth photolithographic step C7 of patterning the transparent conductive film to form a source electrode, a source wiring, a drain electrode and a transparent pixel electrode, and patterning the transparent conductive film, the metal layer and the ohmic contact film above the gate electrode to form a channel portion above the gate electrode, a step C8 of forming a passivation film on the surface of the one substrate after the fourth photolithographic step, and a fifth photolithographic step C9 of patterning the passivation film to remove a portion of the passivation film above the transparent pixel electrode and make a portion above the transparent pixel electrode light permeable and forming a contact hole for source wiring and gate wiring connection terminals.