Abstract A method for fabricating an LCD-TFT, which can prevent degradation of image quality of a liquid crystal display by preventing blackening of the pixel electrode due to H 2 plasma at the time of deposition of a protective insulation film. The method includes the steps of forming a gate electrode on a transparent glass substrate, and forming a gate insulation film, a semiconductor layer, and an impurity doped semiconductor layer successively over the surface of the substrate. The semiconductor layer and the impurity doped semiconductor layer are patterned, leaving layers only over a part of the gate insulation film over the gate electrode. A pixel electrode is formed on a part of the gate insulation film offset from the gate electrode. A metal barrier layer and source/drain electrodes are over the surface of the substrate. The metal barrier layer and the source/drain electrodes are patterned so as to expose the impurity doped semiconductor layer over the gate electrode and to cover all the surface of the pixel electrode. The semiconductor layer under the impurity doped semiconductor layer is exposed by carrying out a selective etching of the exposed impurity doped semiconductor layer with the metal barrier layer and the source/drain electrodes used as masks. A protective insulation layer is formed over the surface of the substrate, and the pixel electrode is exposed by selectively removing the protective insulation layer, the metal barrier layer and the source/drain electrodes over the pixel electrode.
Inventors
👤 Jin H. Kim
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-09 10:39
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
213 words
A method for fabricating a thin film transistor for a liquid crystal display, comprising: forming a gate electrode on a transparent glass substrate; forming a gate insulation film over the glass substrate; forming a first semiconductor layer over the gate insulation film; forming an impurity doped second semiconductor layer over the surface of the first semiconductor layer; patterning the semiconductor layers so that the semiconductor layer and the impurity doped semiconductor layer are left on a part of the gate insulation film over the gate electrode; forming a pixel electrode on a part of the gate insulation film offset from the gate electrode; forming a metal barrier layer and source/drain electrodes over the surface of the glass substrate; patterning the metal barrier layer and the source/drain electrodes to expose the impurity doped semiconductor layer over the gate electrode while covering the surface of the pixel electrode; exposing the semiconductor layer under the impurity doped semiconductor layer by selectively etching the exposed impurity doped semiconductor layer with the metal barrier layer and the source/drain electrodes used as masks; forming a protective insulation layer over the whole surface of the substrate; and, exposing the pixel electrode by selectively removing the protective insulation layer, the metal barrier layer and the source/drain electrodes over the pixel electrode.
Claim 2
Independent Claim
213 words
A method for fabricating a thin film transistor for a liquid crystal display, comprising: forming a gate electrode on a transparent glass substrate; forming a gate insulation film over the glass substrate; forming a first semiconductor layer over the gate insulation film; forming an impurity doped second semiconductor layer over the surface of the first semiconductor layer; patterning the semiconductor layers so that the semiconductor layer and the impurity doped semiconductor layer are left on a part of the gate insulation film over the gate electrode; forming a pixel electrode on a part of the gate insulation film offset from the gate electrode; forming a metal barrier layer and source/drain electrodes over the surface of the glass substrate; patterning the metal barrier layer and the source/drain electrodes to expose the impurity doped semiconductor layer over the gate electrode while covering the surface of the pixel electrode; exposing the semiconductor layer under the impurity doped semiconductor layer by selectively etching the exposed impurity doped semiconductor layer with the metal barrier layer and the source/drain electrodes used as masks; forming a protective insulation layer over the whole surface of the substrate; and, exposing the pixel electrode by selectively removing the protective insulation layer, the metal barrier layer and the source/drain electrodes over the pixel electrode.