US5866303A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resist developing method by magnetic field controlling, resist developing apparatus and method of fabricating semiconductor device
Assignee: Kioxia Corp
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Filing: 1997-10-15
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Granted: 1999-02-02
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Expires: 2017-10-15
Abstract
Abstract A semiconductor device is fabricated by the steps of coating an underlayer formed on a semiconductor substrate with chemically amplified resist, exposing the resist to light, bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline developing solution for conducting development to form a resist pattern, and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.
Inventors
- 👤 Tsukasa Azuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:00
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/3021; Y; Y10; Y10S; Y10S204/00; Y10S204/05
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
48 words
A resist developing method comprising the steps of: coating an article to be treated with a chemically amplified resist; exposing the resist to light; and bringing the resist into contact with an alkaline developing solution for conducting development with applying a magnetic field to the alkaline developing solution.
Claim 2
Dependent Claim
48 words
A resist developing method comprising the steps of: coating an article to be treated with a chemically amplified resist; exposing the resist to light; and bringing the resist into contact with an alkaline developing solution for conducting development with applying a magnetic field to the alkaline developing solution.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein the magnetic field is applied in vertical direction.
Claim 4
Dependent Claim
23 words
The method according to claim 1, wherein the magnetic field is applied in horizontal direction and the article to be treated is rotated.
Claim 5
Dependent Claim
60 words
The method according to claim 1, wherein the resist is developed by repeating the steps of: applying a magnetic field in upward direction to the alkaline developing solution; applying a magnetic field in downward direction to the alkaline developing solution; and applying a magnetic field in horizontal direction to the alkaline developing solution with rotating the article to be treated.
Claim 6
Independent Claim
71 words
A method of fabricating a semiconductor device comprising the steps of: coating an underlayer formed on a semiconductor substrate with a chemically amplified resist; exposing the resist to light; bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline solution for conducting development to form a resist pattern; and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.
Claim 7
Independent Claim
71 words
A method of fabricating a semiconductor device comprising the steps of: coating an underlayer formed on a semiconductor substrate with a chemically amplified resist; exposing the resist to light; bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline solution for conducting development to form a resist pattern; and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.
Claim 8
Dependent Claim
15 words
The method according to claim 5, wherein the magnetic field is applied in vertical direction.
Claim 9
Dependent Claim
21 words
The method according to claim 5, wherein the magnetic field is applied in horizontal direction and the semiconductor substrate is rotated.
Claim 10
Dependent Claim
58 words
The method according to claim 5, wherein the resist is developed by repeating the steps of: applying a magnetic field in upward direction to the alkaline developing solution; applying a magnetic field in downward direction to the alkaline developing solution; and applying a magnetic field in horizontal direction to the alkaline developing solution and rotating the semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-01 | 2002-08-03 | 2003-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-01 | 2006-08-03 | 2007-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-01 | 2010-08-03 | 2011-02-02 | $7700.00 | Window Closed / Lapsed |