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US5864153A
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Capacitor structure of semiconductor memory cell and fabrication process thereof
Assignee: Sony Corp
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Filing: 1997-10-27
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Granted: 1999-01-26
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Expires: 2017-10-27
Abstract
Abstract A capacitor structure of a semiconductor memory cell such as a FERAM has an upper electrode less susceptible a damage even by heat-treatment in a hydrogen gas atmosphere. The capacitor structure includes a lower electrode, a capacitor thin film formed of a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor thin film. The upper electrode is made of Ru 1-x O x (0.1<x<0.64).
Inventors
- 👤 Nicolas Nagel
- 👤 Kenji Katori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10D1/682
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
50 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode; a capacitor thin film composed of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor thin film; wherein said upper electrode is made from Ru 1-x O x where 0.1<x<0.64.
Claim 2
Dependent Claim
50 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode; a capacitor thin film composed of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor thin film; wherein said upper electrode is made from Ru 1-x O x where 0.1<x<0.64.
Claim 3
Dependent Claim
31 words
A capacitor structure of a semiconductor memory cell according to claim 1, wherein said ferroelectric thin film is made from a ferroelectric material of a Bi based layer structure perovskite type.
Claim 4
Dependent Claim
49 words
A capacitor structure of a semiconductor memory cell according to claim 1, wherein said ferroelectric thin film contains, as a main crystal phase, a crystal phase expressed by Bi x (Sr, Ca, Ba) y (Ta z , Nb 1-z ) 2 O d where 1.7≦X≦2.5, 0.6≦Y≦1.2, 0≦Z≦1.0, and 8.0≦d≦10.0.
Claim 5
Dependent Claim
29 words
A capacitor structure of a semiconductor memory cell according to claim 1, wherein said ferroelectric thin film is made from Pb(Zr 1-y , Ti y )O 3 where 0<y<1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-25 | 2002-07-27 | 2003-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-25 | 2006-07-27 | 2007-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-25 | 2010-07-27 | 2011-01-26 | $7700.00 | Window Closed / Lapsed |