US5702970A
Expired / Lapsed
US
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Method for fabricating a capacitor of a semiconductor device
Assignee: Mosaid Technologies Inc
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Filing: 1996-06-26
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Granted: 1997-12-30
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Expires: 2016-06-26
Abstract
Abstract A method for fabricating a capacitor of a semiconductor device which stabilizes the operation of electrodes of the capacitor and improves the operational characteristic and reliability of the semiconductor device. The method comprises the steps of: preparing a semiconductor substrate; forming an insulating layer on the substrate; forming a contact hole by selectively eliminating the lower insulating layer; forming a plug in the contact hole; forming a Ti/TiN film thereon; forming a first ruthenium oxide film on the Ti/TiN film; forming a first SOG film on the first ruthenium oxide film; implanting impurities into a surface of the first SOG film; forming a second SOG film on the first SOG film, and then selectively eliminating the first and the second SOG films; etching the first ruthenium oxide film and the Ti/TiN film by utilizing the first and second SOG films as a mask; eliminating the first and second SOG films, and then forming a dielectric film on the exposed surface thereof; and forming a second ruthenium oxide film on the dielectric film.
Inventors
- 👤 Kyeong Keun Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P50/00; H10P50/71
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
207 words
A method for fabricating a capacitor of a semiconductor device, the method comprising the steps of: preparing a semiconductor substrate; forming an insulating layer on said semiconductor substrate; forming a contact hole, which exposes said semiconductor substrate, by selectively eliminating said lower insulating layer; forming a plug in said contact hole; forming a titanium/titanium nitride film on said plug and said lower insulating layer; forming a first ruthenium oxide film on said titanium/titanium nitride film; forming a first spin on glass film on said first ruthenium oxide film; implanting a impurities into a surface of said first spin on glass film; forming a second spin on glass film on said first spin on glass film, and then selectively eliminating said first and said second spin on glass films; etching said first ruthenium oxide film and said titanium/titanium nitride film by utilizing said second and said first spin on glass films as a mask; eliminating said second and said first spin on glass films, and then forming a dielectric film on an exposed surface of said first ruthenium oxide film, said titanium/titanium nitride film, and said lower insulating layer, the dielectric film having a specific dielectric constant; and forming a second ruthenium oxide film on said dielectric film.
Claim 2
Independent Claim
207 words
A method for fabricating a capacitor of a semiconductor device, the method comprising the steps of: preparing a semiconductor substrate; forming an insulating layer on said semiconductor substrate; forming a contact hole, which exposes said semiconductor substrate, by selectively eliminating said lower insulating layer; forming a plug in said contact hole; forming a titanium/titanium nitride film on said plug and said lower insulating layer; forming a first ruthenium oxide film on said titanium/titanium nitride film; forming a first spin on glass film on said first ruthenium oxide film; implanting a impurities into a surface of said first spin on glass film; forming a second spin on glass film on said first spin on glass film, and then selectively eliminating said first and said second spin on glass films; etching said first ruthenium oxide film and said titanium/titanium nitride film by utilizing said second and said first spin on glass films as a mask; eliminating said second and said first spin on glass films, and then forming a dielectric film on an exposed surface of said first ruthenium oxide film, said titanium/titanium nitride film, and said lower insulating layer, the dielectric film having a specific dielectric constant; and forming a second ruthenium oxide film on said dielectric film.
Claim 3
Dependent Claim
36 words
The method as claimed in claim 1, wherein said first ruthenium oxide film is formed by means of ruthenium target and oxygen/argon gas in a sputtering reactor under a temperature between 25° C. and 500° C.
Claim 4
Dependent Claim
25 words
The method as claimed in claim 1, wherein said dielectric film is formed by means of Ba 0 .5 Sr 0 .5 TiO 3 .
Claim 5
Dependent Claim
18 words
The method as claimed in claim 1, wherein said dielectric film is formed by utilizing lead zirconate titanate.
Claim 6
Dependent Claim
31 words
The method as claimed in claim 1, wherein said step of implanting the impurities is carried out by utilizing gas of Pt(CO) 2 Cl 2 as raw material of the impurities.
Claim 7
Dependent Claim
39 words
The method as claimed in claim 1, wherein said step of selectively eliminating the first and the second spin on glass films is carried out by utilizing chemicals of CHF 3 /CF 4 , O 2 , and Ar.
Claim 8
Dependent Claim
41 words
The method as claimed in claim 1, wherein said step of etching the first ruthenium oxide film and the titanium/titanium nitride film is carried out by means of Cl 2 /O 2 , Ar gas in a reactive ion etching reactor.
Claim 9
Dependent Claim
39 words
The method as claimed in claim 1, wherein said step of forming the second ruthenium oxide film is carried out by utilizing Ru(DPM) 3 and O 2 gas as raw material through a low pressure chemical vapor deposition method.
Claim 10
Dependent Claim
39 words
The method as claimed in claim 1, wherein said step of forming the second ruthenium oxide film is carried out by utilizing Ru(DPM) 3 and O 3 gas as raw material through a low pressure chemical vapor deposition method.
References Cited (Backward Citations)
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