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US5863838A
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Method for chemically-mechanically polishing a metal layer
Assignee: NXP USA Inc
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Filing: 1996-07-22
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Granted: 1999-01-26
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Expires: 2016-07-22
Abstract
Abstract A method of manufacturing a semiconductor device includes providing (51) a substrate (19), providing (52) a colloid (17) having particles held in suspension, providing (53) a reagent (18), disposing (54) the substrate (19) in a processing tool (10), combining (55) the colloid (17) and the reagent (18) to form a slurry (28), decomposing (56) the reagent (18) into a surfactant and an oxidizer, using (57) the slurry (28) to process the substrate (19) in the processing tool (10), and removing (58) the substrate (19) from the processing tool (10).
Inventors
- 👤 Janos Farkas
- 👤 Melissa Freeman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:09
CPC Classifications
C; C23; C23F; C23F3/00; H; H10; H10W; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/30; H10W72/321; H10W72/325; H10W72/351
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
49 words
A method of manufacturing a semiconductor device comprising: providing a substrate that includes an exposed metal layer; providing a mixture having particles and an organic salt; and applying the mixture to the substrate, wherein the organic salt decomposes into an oxidizer and surfactant after contacting the exposed metal layer.
Claim 2
Independent Claim
49 words
A method of manufacturing a semiconductor device comprising: providing a substrate that includes an exposed metal layer; providing a mixture having particles and an organic salt; and applying the mixture to the substrate, wherein the organic salt decomposes into an oxidizer and surfactant after contacting the exposed metal layer.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein the step of applying the mixture is performed such that the exposed metal layer includes a material selected from a group consisting of aluminum, copper, and tungsten.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein the step of providing the mixture includes providing a non-chelated organic salt for the organic salt.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein the step of applying the mixture is performed to provide an inorganic component for the oxidizer.
Claim 6
Dependent Claim
22 words
The method of claim 1, wherein the step of applying the mixture is performed to provide an organic component for the oxidizer.
Claim 7
Dependent Claim
33 words
The method of claim 1, wherein: the oxidizer includes an anion selected from a group consisting of a periodate, a nitrate, a sulfate, and an oxalate; and the surfactant includes an organic surfactant.
Claim 8
Dependent Claim
32 words
The method of claim 1, wherein the step of providing the mixture includes providing a slurry and wherein the step of applying the mixture includes using the slurry to polish the substrate.
Claim 9
Dependent Claim
40 words
The method of claim 1, wherein: the particles are part of a colloid; and the mixture has a weight ratio of the colloid to the organic salt, wherein the weight ratio is in a range of approximately 10:1 to 100:1.
Claim 10
Dependent Claim
37 words
The method of claim 1, wherein: the substrate further includes an insulative layer; and the step of polishing has a metal layer to insulative layer polishing selectivity that is in a range of approximately 100:1 to 200:1.
Claim 11
Dependent Claim
20 words
The method of claim 1, wherein: the oxidizer includes a metal-containing inorganic oxidizer; and the surfactant includes an organic surfactant.
Claim 12
Dependent Claim
23 words
The method of claim 10, wherein the metal-containing inorganic oxidizer includes a metal selected from a group consisting of iron, cerium, and aluminum.
Claim 13
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising: disposing a substrate having an exposed metal layer in a processing tool; combining a colloid and an organic salt to form a slurry; polishing the substrate with the slurry in the processing tool, wherein: the organic salt decomposes into a surfactant and an oxidizer; and the oxidizer includes an anion selected from a group consisting of a periodate, a nitrate, a sulfate, and an oxalate; and removing the substrate from the processing tool.
Claim 14
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising: disposing a substrate having an exposed metal layer in a processing tool; combining a colloid and an organic salt to form a slurry; polishing the substrate with the slurry in the processing tool, wherein: the organic salt decomposes into a surfactant and an oxidizer; and the oxidizer includes an anion selected from a group consisting of a periodate, a nitrate, a sulfate, and an oxalate; and removing the substrate from the processing tool.
Claim 15
Dependent Claim
22 words
The method of claim 12, wherein the step of polishing the substrate decomposes the organic salt into a plurality of organic components.
Claim 16
Dependent Claim
22 words
The method of claim 12, wherein the step of combining the organic salt includes providing a transition metal in the organic salt.
Claim 17
Dependent Claim
20 words
The method of claim 12, wherein the steps of combining the colloid and the organic salt and polishing occur simultaneously.
Claim 18
Dependent Claim
16 words
The method of claim 12, wherein the organic salt decomposes after contacting the exposed metal layer.
Claim 19
Dependent Claim
22 words
The method of claim 12, wherein the organic salt includes a metal selected from the group consisting of iron, cerium, and aluminum.
Claim 20
Dependent Claim
32 words
The method of claim 12, wherein the slurry has a weight ratio of the colloid to the organic salt, wherein the weight ratio is in a range of approximately 10:1 to 100:1.
Claim 21
Dependent Claim
37 words
The method of claim 12, wherein: the substrate further includes an insulative layer; and the step of polishing has a metal layer to insulative layer polishing selectivity that is in a range of approximately 100:1 to 200:1.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-25 | 2002-07-27 | 2003-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-25 | 2006-07-27 | 2007-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-25 | 2010-07-27 | 2011-01-26 | $7700.00 | Window Closed / Lapsed |