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US5862075A Expired / Lapsed US ⏱️ 0.0 years remaining

Device for protection after a page-write operation in an electrically programmable memory

Assignee: STMicroelectronics SA
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Filing: 1997-11-14
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Granted: 1999-01-19
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Expires: 2017-11-14
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Abstract

Abstract A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in order to write a page previously stored in buffers, and the circuit addresses the writing of a protection bit after the writing of the page.

Inventors

  • 👤 Bruno Leconte
  • 👤 Alessandro Brigati
  • 👤 Jean Devin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 22:20
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/22; G11C16/10

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 123 words
A circuit for the sequencing of write operations in a floating-gate type memory, comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising: first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 2
Dependent Claim 123 words
A circuit for the sequencing of write operations in a floating-gate type memory, comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising: first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 3
Dependent Claim 40 words
A circuit according to claim 1, further comprising a microcontroller and a multiplexer connected thereto for providing the microcontroller with an end-of-programming signal from either the first means or the second means depending on a state of the indicator bit.
Claim 4
Dependent Claim 75 words
A circuit according to claim 1, wherein said first means includes a counter having a first input to receive a clock signal corresponding to a write signal, a second input to receive a reset signal, a parallel output to provide a number corresponding to an address of the one of the columns of the storage matrix, and an end-of-counting output to report that counting is finished and that the programming of the page is finished.
Claim 5
Dependent Claim 27 words
A circuit according to claim 1, wherein said second means comprises a storage flip-flop circuit for providing, at an output, a signal to program the protection bit.
Claim 6
Dependent Claim 128 words
A floating-gate type memory circuit having a write-by-page instruction with write protection, said memory circuit comprising: a storage matrix of floating-gate type cells being programmable by hot electrons; a plurality of buffers for temporarily storing data elements of a page; and sequencing means for sequencing write operations, said sequencing means comprising: first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 7
Dependent Claim 128 words
A floating-gate type memory circuit having a write-by-page instruction with write protection, said memory circuit comprising: a storage matrix of floating-gate type cells being programmable by hot electrons; a plurality of buffers for temporarily storing data elements of a page; and sequencing means for sequencing write operations, said sequencing means comprising: first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 8
Dependent Claim 41 words
A memory circuit according to claim 5, further comprising a microcontroller and a multiplexer connected thereto for providing the microcontroller with an end-of-programming signal from either the first means or the second means depending on a state of the indicator bit.
Claim 9
Dependent Claim 76 words
A memory circuit according to claim 5, wherein said first means includes a counter having a first input to receive a clock signal corresponding to a write signal, a second input to receive a reset signal, a parallel output to provide a number corresponding to an address of the one of the columns of the storage matrix, and an end-of-counting output to report that counting is finished and that the programming of the page is finished.
Claim 10
Dependent Claim 28 words
A memory circuit according to claim 5, wherein said second means comprises a storage flip-flop circuit for providing, at an output, a signal to program the protection bit.
Claim 11
Dependent Claim 149 words
A circuit for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising: a counter having a first input to receive a clock signal corresponding to a write signal, a second input to receive a reset signal, a parallel output to provide a number corresponding to an address of the one of the columns of the storage matrix, and an end-of-counting output to report that counting is finished and that the programming of the page is finished; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 12
Dependent Claim 149 words
A circuit for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising: a counter having a first input to receive a clock signal corresponding to a write signal, a second input to receive a reset signal, a parallel output to provide a number corresponding to an address of the one of the columns of the storage matrix, and an end-of-counting output to report that counting is finished and that the programming of the page is finished; and second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 13
Dependent Claim 40 words
A circuit according to claim 9, further comprising a microcontroller and a multiplexer connected thereto for providing the microcontroller with an end-of-programming signal from either the first means or the second means depending on a state of the indicator bit.
Claim 14
Dependent Claim 27 words
A circuit according to claim 9, wherein said second means comprises a storage flip-flop circuit for providing, at an output, a signal to program the protection bit.
Claim 15
Independent Claim 119 words
A method for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the method comprising the steps of: successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and reporting an end of the writing into the page; and addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 16
Independent Claim 119 words
A method for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the method comprising the steps of: successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and reporting an end of the writing into the page; and addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Claim 17
Dependent Claim 36 words
A method according to claim 12, wherein the memory further comprises a microcontroller and a multiplexer connected thereto; and further comprising the step of using the multiplexer for providing the microcontroller with an end-of-programming information element.

References Cited (Backward Citations)

EP0272977A1 Cited
US5097445A Cited
US5363330A Cited
US5363334A Cited
US5570315A Cited
US5621692A Cited
US5696732A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-01-18 2002-07-20 2003-01-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-01-18 2006-07-20 2007-01-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-01-18 2010-07-20 2011-01-19 $7700.00 Window Closed / Lapsed

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