US5858820A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film transistor-liquid crystal display and a manufacturing method thereof
Assignee: LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
•
Filing: 1996-05-17
•
Granted: 1999-01-12
•
Expires: 2016-05-17
Abstract
Abstract The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.
Inventors
- 👤 Byung-Hoo Jung
- 👤 Yong-Suk Jin
- 👤 Joo-hyung Lee
- 👤 Chang-Won Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:51
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H; H10; H10D; H10D86/00; H10D86/40; G02F1/136; G02F1/1362; G02F1/1368; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6755; H10D30/6756; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2924; H10P14/2925; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
127 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing a seed layer on a substrate; forming a seed layer pattern by etching said seed layer; epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate; implanting ions in said silicon layer to obtain an ion implanted silicon layer; and annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display, wherein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location between source and drain electrodes in said active region of said thin film transistor liquid crystal display.
Claim 2
Independent Claim
127 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing a seed layer on a substrate; forming a seed layer pattern by etching said seed layer; epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate; implanting ions in said silicon layer to obtain an ion implanted silicon layer; and annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display, wherein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location between source and drain electrodes in said active region of said thin film transistor liquid crystal display.
Claim 3
Independent Claim
203 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing a seed layer on a substrate; forming a seed layer pattern by etching said seed layer; epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate; implanting ions in said silicon layer to obtain an ion implanted silicon layer; annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display; forming an oxidation layer over said active region of said thin film transistor liquid crystal display; depositing a gate metal over said oxidation layer; forming a gate pattern by etching said gate metal; depositing an insulating layer over said gate pattern; etching contact holes in portions of said oxidation layer and said insulating layer; and forming a conductor layer connected through said contact holes to portions of said active region of said thin film transistor liquid crystal display, wherein said step of forming said seed layer pattern forms said seed layer pattern below a location of at least one of source and drain electrodes in said active region of said thin film transistor liquid crystal display.
Claim 4
Independent Claim
203 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing a seed layer on a substrate; forming a seed layer pattern by etching said seed layer; epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate; implanting ions in said silicon layer to obtain an ion implanted silicon layer; annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display; forming an oxidation layer over said active region of said thin film transistor liquid crystal display; depositing a gate metal over said oxidation layer; forming a gate pattern by etching said gate metal; depositing an insulating layer over said gate pattern; etching contact holes in portions of said oxidation layer and said insulating layer; and forming a conductor layer connected through said contact holes to portions of said active region of said thin film transistor liquid crystal display, wherein said step of forming said seed layer pattern forms said seed layer pattern below a location of at least one of source and drain electrodes in said active region of said thin film transistor liquid crystal display.
Claim 5
Dependent Claim
28 words
A method according to claim 2 further including the step of annealing said active region of said thin film transistor liquid crystal display after forming said oxidation layer.
Claim 6
Dependent Claim
37 words
A method according to claim 3 wherein said step of annealing said active region of said thin film transistor liquid crystal display after forming said oxidation layer uses an annealing temperature in the range of 800°-1100° C.
Claim 7
Independent Claim
65 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: forming a trench by etching a substrate; depositing a silicon layer over said substrate and into said trench; annealing said silicon layer so that grains within said silicon layer become larger; etching said silicon layer to form a active region silicon layer pattern.
Claim 8
Independent Claim
65 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: forming a trench by etching a substrate; depositing a silicon layer over said substrate and into said trench; annealing said silicon layer so that grains within said silicon layer become larger; etching said silicon layer to form a active region silicon layer pattern.
Claim 9
Dependent Claim
46 words
A method according to claim 5 wherein said step of forming said trench forms said trench in a position that corresponds to a location of at least one of a source and drain electrode in said active region of said thin film transistor liquid crystal display.
Claim 10
Dependent Claim
19 words
A method according to claim 6 wherein said trench is positioned below one of said source and drain electrodes.
Claim 11
Dependent Claim
17 words
A method according to claim 7 wherein said trench is positioned between said source and drain electrodes.
Claim 12
Independent Claim
84 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing an amorphous silicon layer on a substrate; transforming said amorphous silicon to a poly silicon layer using solid phase crystallization; etching said poly silicon layer to form a seed layer pattern; depositing another amorphous silicon layer over said seed layer pattern and portions of said substrate; and transforming said another amorphous silicon layer into said active region using solid phase crystallization.
Claim 13
Independent Claim
84 words
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of: depositing an amorphous silicon layer on a substrate; transforming said amorphous silicon to a poly silicon layer using solid phase crystallization; etching said poly silicon layer to form a seed layer pattern; depositing another amorphous silicon layer over said seed layer pattern and portions of said substrate; and transforming said another amorphous silicon layer into said active region using solid phase crystallization.
Claim 14
Dependent Claim
50 words
A method according to claim 9 wherein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location of at least one of a source and drain electrode in said active region of said thin film transistor liquid crystal display.
Claim 15
Dependent Claim
21 words
A method according to claim 10 wherein said seed layer pattern is positioned below one of said source and drain electrodes.
Claim 16
Dependent Claim
19 words
A method according to claim 10 wherein said seed layer pattern is positioned between said source and drain electrodes.
Claim 17
Independent Claim
79 words
A method for manufacturing a portion of a thin film transistor liquid crystal display comprising the step of: forming a seed layer pattern of amorphous silicon on a substrate; depositing an amorphous silicon active layer over said seed layer pattern and portions of said substrate; and projecting a laser on a part of said amorphous silicon layer to melt portions of said amorphous silicon layer that are adjacent to said seed layer pattern to form a laser crystallized region.
Claim 18
Independent Claim
79 words
A method for manufacturing a portion of a thin film transistor liquid crystal display comprising the step of: forming a seed layer pattern of amorphous silicon on a substrate; depositing an amorphous silicon active layer over said seed layer pattern and portions of said substrate; and projecting a laser on a part of said amorphous silicon layer to melt portions of said amorphous silicon layer that are adjacent to said seed layer pattern to form a laser crystallized region.
Claim 19
Dependent Claim
115 words
A method according to claim 13, further including the steps of: etching said laser crystallized region to define a laser crystallized active region; depositing a gate insulating layer over said laser crystallized active region; forming a gate electrode over said gate insulating layer; forming a source and drain electrodes in said laser crystallized active region using said gate electrode as a mask; depositing an insulating layer over exposed surface portions; etching said insulating layer to form contact holes in said insulating layer to expose said source and drain electrodes; and forming a metal pattern over said insulating layer, said metal pattern filling said contact holes and establishing electrical contact with said source and drain electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |