US5858620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for manufacturing the same
Assignee: Renesas Electronics Corp
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Filing: 1997-01-24
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Granted: 1999-01-12
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Expires: 2017-01-24
Abstract
Abstract A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.
Inventors
- 👤 Takeo Ishibashi
- 👤 Ayumi Minamide
- 👤 Toshiyuki Toyoshima
- 👤 Keiichi Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:15
CPC Classifications
H; H10; H10P; H10P76/00; H10P50/00; H10P50/71; G; G03; G03F; G03F7/00; G03F7/0035; G03F7/26; G03F7/40; H10P50/73; H10P76/20; H10P76/204; G03F7/405
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
127 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer formed on a substrate; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; exposing the substrate to light after forming the second resist layer, thereby generating an acid in the first resist layer; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
Claim 2
Independent Claim
127 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer formed on a substrate; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; exposing the substrate to light after forming the second resist layer, thereby generating an acid in the first resist layer; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
Claim 3
Dependent Claim
32 words
A method for manufacturing a semiconductor device according to claim 1, wherein said pattern of the first resist and said layer of the second resist are heated to form said cross-linked film.
Claim 4
Dependent Claim
32 words
The method for manufacturing a semiconductor device according to claim 1, wherein an acid is generated in the first resist by exposure to a g-ray or an i-ray from a mercury lamp.
Claim 5
Dependent Claim
29 words
A method for manufacturing a semiconductor device according to claim 3, wherein said pattern of said first resist is selectively exposed to light only in a predetermined area thereof.
Claim 6
Dependent Claim
33 words
A method for manufacturing a semiconductor device according to claim 1, wherein said pattern of the first resist is formed of a mixture comprising a novolac-based resin and a naphtho-quinone diazide photosensitive agent.
Claim 7
Dependent Claim
26 words
A method for manufacturing a semiconductor device according to claim 5, wherein said pattern of said first resist further comprises a chloro-methyl-triazine as an acid generator.
Claim 8
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 1, wherein said pattern of said first resist is formed of a mixture comprising a poly-hydroxy-styrene derivative and an onium salt serving as an photo-assisted acid generator.
Claim 9
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 1, wherein said layer of said second resist is formed of a resist which comprises a cross-linking agent, undergoing cross-linking reaction in the presence of an acid.
Claim 10
Dependent Claim
51 words
A method for manufacturing a semiconductor device according to claim 1, wherein said layer of the second resist is formed of a material selected from a group of polyvinyl acetal, a mixture of polyvinyl acetal and methoxy-methylol-urea, a mixture of polyvinyl acetal and methoxy-methylol-melamine, or a mixture of methoxy-methylol-melamine and polyallyl-amine.
Claim 11
Dependent Claim
74 words
A method for manufacturing a semiconductor device according to claim 1, wherein a solvent for said second resist is selected from pure water, or a mixture of pure water and an alcohol, which can dissolve a base polymer and a cross-linkable compound, and which cannot dissolve said first resist, and which have a high solubility parameter, and a liquid developer for said second resist is selected from pure water or an alkaline aqueous solution.
Claim 12
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 1, wherein a solvent for said second resist and a liquid developer for said second resist are selected from an organic solvent which can dissolve the base polymer and the cross-linkable compound, and which cannot dissolve said first resist, and which have a low solubility parameter.
Claim 13
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 1, wherein said first resist is selected from negative type resists which are made of a mixture of a cross-linkable compound, an acid generator and a base polymer.
Claim 14
Dependent Claim
16 words
A semiconductor device manufactured by said method of manufacturing a semiconductor device according to claim 1.
Claim 15
Independent Claim
106 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
Claim 16
Independent Claim
106 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
Claim 17
Dependent Claim
33 words
A method for manufacturing a semiconductor device according to claim 14, wherein said pattern of the first resist is formed of a mixture comprising a novolac-based resin and a naphtho-quinone diazide photosensitive agent.
Claim 18
Dependent Claim
26 words
A method for manufacturing a semiconductor device according to claim 15, wherein said pattern of said first resist further comprises a chloro-methyl-triazine as an acid generator.
Claim 19
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 14, wherein said pattern of said first resist is formed of a mixture comprising a poly-hydroxy-styrene derivative and an onium salt serving as a photo-assisted acid generator.
Claim 20
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 14, wherein said layer of said second resist is formed of a resist which comprises a cross-linking agent, undergoing cross-linking reaction in the presence of an acid.
Claim 21
Dependent Claim
51 words
A method for manufacturing a semiconductor device according to claim 14, wherein said layer of the second resist is formed of a material selected from a group of polyvinyl acetal, a mixture of polyvinyl acetal and methoxy-methylol-urea, a mixture of polyvinyl acetal and methoxy-methylol-melamine, or a mixture of methoxy-methylol-melamine and polyallyl-amine.
Claim 22
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 14, wherein said first resist is selected from negative type resists which are made of a mixture of a cross-linkable compound, an acid generator and a base polymer.
Claim 23
Dependent Claim
74 words
A method for manufacturing a semiconductor device according to claim 14, wherein a solvent for said second resist is selected from pure water or a mixture of pure water and an alcohol which can dissolve a base polymer and a cross-linkable compound, and which cannot dissolve said first resist, and which have a high solubility parameter, and a liquid developer for said second resist is selected from pure water or an alkaline aqueous solution.
Claim 24
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 14, wherein a solvent for said second resist and a liquid developer for said second resist are selected from an organic solvent which can dissolve the base polymer and the cross-linkable compound, and which cannot dissolve said first resist, and which have a low solubility parameter.
Claim 25
Independent Claim
125 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern; wherein said pattern of the first resist is formed of a resist which is surface-treated with an acidic liquid.
Claim 26
Independent Claim
125 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a pattern of a first resist on a substrate or on a semiconductor device layer; forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid; forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment; removing non-cross-linked portions of said second resist thereby forming a resist pattern; and etching said substrate or said semiconductor device layer via a mask of said resist pattern; wherein said pattern of the first resist is formed of a resist which is surface-treated with an acidic liquid.
Claim 27
Dependent Claim
33 words
A method for manufacturing a semiconductor device according to claim 23, wherein said pattern of the first resist is formed of a mixture comprising a novolac-based resin and a naphtho-quinone diazide photosensitive agent.
Claim 28
Dependent Claim
26 words
A method for manufacturing a semiconductor device according to claim 24, wherein said pattern of said first resist further comprises a chloro-methyl-triazine as an acid generator.
Claim 29
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 23 wherein said pattern of said first resist is formed of a mixture comprising a poly-hydroxy-styrene derivative and an onium salt serving as a photo-assisted acid generator.
Claim 30
Dependent Claim
37 words
A method for manufacturing a semiconductor device according to claim 23, wherein said layer of said second resist is formed of a resist which comprises a cross-linking agent, undergoing cross-linking reaction in the presence of an acid.
Claim 31
Dependent Claim
51 words
A method for manufacturing a semiconductor device according to claim 23, wherein said layer of the second resist is formed of a material selected from a group of polyvinyl acetal, a mixture of polyvinyl acetal and methoxy-methylol-urea, a mixture of polyvinyl acetal and methoxy-methylol-melamine, or a mixture of methoxy-methylol-melamine and polyallyl-amine.
Claim 32
Dependent Claim
38 words
A method for manufacturing a semiconductor device according to claim 23, wherein said first resist is selected from negative type resists which are made of a mixture of a cross-linkable compound, an acid generator and a base polymer.
Claim 33
Dependent Claim
74 words
A method for manufacturing a semiconductor device according to claim 23, wherein a solvent for said second resist is selected from pure water or a mixture of pure water and an alcohol which can dissolve a base polymer and a cross-linkable compound, and which cannot dissolve said first resist, and which have a high solubility parameter, and a liquid developer for said second resist is selected from pure water or an alkaline aqueous solution.
Claim 34
Dependent Claim
56 words
A method for manufacturing a semiconductor device according to claim 23, wherein a solvent for said second resist and a liquid developer for said second resist are selected from an organic solvent which can dissolve the base polymer and the cross-linkable compound, and which cannot dissolve said first resist, and which have a low solubility parameter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |