Method of manufacturing a semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: providing an inorganic mask on a section on a substrate; providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate, the conductive material comprising aluminum; treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask, the insulative compound film comprising aluminum fluoride; removing the mask from the section; and forming, on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: providing an inorganic mask on a section on a substrate; providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate, the conductive material comprising aluminum; treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask, the insulative compound film comprising aluminum fluoride; removing the mask from the section; and forming, on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.

Claim 3

A method of manufacturing a semiconductor device comprising the steps of: (a) providing an inorganic mask on a section on a substrate, the inorganic mask being arranged adjacent to a surface of the substrate; (b) providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate; (c) treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask; (d) after said step (c), removing the mask from the section; and (e) forming on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.

Claim 4

A method of manufacturing a semiconductor device comprising the steps of: (a) providing an inorganic mask on a section on a substrate, the inorganic mask being arranged adjacent to a surface of the substrate; (b) providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate; (c) treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask; (d) after said step (c), removing the mask from the section; and (e) forming on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.

Claim 5

A method of manufacturing a semiconductor device comprising the steps of: forming plural insulating regions partially on the surface of a semiconductor body; forming a first semiconductor region on a semiconductor section between the insulating regions, the first semiconductor region having a conductivity type different from that of the semiconductor section; forming a mask partially on the first semiconductor region; providing a conductive layer on the mask, and on a section not covered by the mask on the first semiconductor region; treating a surface of the conductive layer with a gas to form an insulating material layer of a material different from that of the mask; removing the mask to expose a part of the first semiconductor region; and forming, on the exposed part of the first semiconductor region, a second semiconductor region of a conductivity type opposite to that of the first semiconductor region.

Claim 6

A method of manufacturing a semiconductor device comprising the steps of: forming plural insulating regions partially on the surface of a semiconductor body; forming a first semiconductor region on a semiconductor section between the insulating regions, the first semiconductor region having a conductivity type different from that of the semiconductor section; forming a mask partially on the first semiconductor region; providing a conductive layer on the mask, and on a section not covered by the mask on the first semiconductor region; treating a surface of the conductive layer with a gas to form an insulating material layer of a material different from that of the mask; removing the mask to expose a part of the first semiconductor region; and forming, on the exposed part of the first semiconductor region, a second semiconductor region of a conductivity type opposite to that of the first semiconductor region.

Claim 11

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a surface of a semiconductor body; forming a mask on the first insulating film; etching a part of the first insulating film to expose a part of the semiconductor body; depositing on the exposed part of the semiconductor body a conductive material different from a material of the mask; treating a surface of the conductive material with a gas to form a second insulating film; and removing the mask material to form a pattern of the conductive material connected to the exposed part of the semiconductor body and to the first insulating film.

Claim 12

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a surface of a semiconductor body; forming a mask on the first insulating film; etching a part of the first insulating film to expose a part of the semiconductor body; depositing on the exposed part of the semiconductor body a conductive material different from a material of the mask; treating a surface of the conductive material with a gas to form a second insulating film; and removing the mask material to form a pattern of the conductive material connected to the exposed part of the semiconductor body and to the first insulating film.

Claim 14

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a semiconductor body; forming a mask on the first insulating film; removing a portion of the first insulating film not covered by the mask to expose a surface of the semiconductor body; forming a semiconductor layer on the exposed surface of the semiconductor body; forming a conductive layer on the semiconductor layer; treating a surface of the conductive layer with a gas to form a second insulating film of a material different from the conductive layer; removing the mask to expose a surface of the first insulating film; and forming a gate electrode on the exposed surface of the first insulating film.

Claim 15

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a semiconductor body; forming a mask on the first insulating film; removing a portion of the first insulating film not covered by the mask to expose a surface of the semiconductor body; forming a semiconductor layer on the exposed surface of the semiconductor body; forming a conductive layer on the semiconductor layer; treating a surface of the conductive layer with a gas to form a second insulating film of a material different from the conductive layer; removing the mask to expose a surface of the first insulating film; and forming a gate electrode on the exposed surface of the first insulating film.

Claim 17

A method of manufacturing a semiconductor device comprising the steps of: (a) forming a semiconductor region of a first conductivity type at a surface of a body of a second conductivity type; (b) providing an inorganic mask on a section on the semiconductor region, the inorganic mask being arranged adjacent to a surface of the semiconductor region; (c) providing, on a surface of the semiconductor region not covered by the mask, a conductive material different from a material constituting the surface of the substrate; (d) treating a surface of the conductive material with a gas to form an insulative compound film; (e) removing the mask from the section; and (f) forming, at a section from which the mask is removed, a semiconductor layer of the second conductivity type.

Claim 18

A method of manufacturing a semiconductor device comprising the steps of: (a) forming a semiconductor region of a first conductivity type at a surface of a body of a second conductivity type; (b) providing an inorganic mask on a section on the semiconductor region, the inorganic mask being arranged adjacent to a surface of the semiconductor region; (c) providing, on a surface of the semiconductor region not covered by the mask, a conductive material different from a material constituting the surface of the substrate; (d) treating a surface of the conductive material with a gas to form an insulative compound film; (e) removing the mask from the section; and (f) forming, at a section from which the mask is removed, a semiconductor layer of the second conductivity type.

Claim 26

A method of manufacturing a semiconductor device having a MOSFET, comprising the steps of: (a) forming a mask on a portion of a semiconductor which is formed into a channel; (b) forming source and drain electrodes on a surface of the semiconductor which is not covered with the mask; (c) performing a reaction with a gas on a surface of said source and drain electrodes, to form an insulating film; (d) after the step (c), removing the mask, and (e) forming a gate electrode on the section from which the mask is removed, wherein said source and drain electrodes are made of metal or silicide.

Claim 27

A method of manufacturing a semiconductor device having a MOSFET, comprising the steps of: (a) forming a mask on a portion of a semiconductor which is formed into a channel; (b) forming source and drain electrodes on a surface of the semiconductor which is not covered with the mask; (c) performing a reaction with a gas on a surface of said source and drain electrodes, to form an insulating film; (d) after the step (c), removing the mask, and (e) forming a gate electrode on the section from which the mask is removed, wherein said source and drain electrodes are made of metal or silicide.