Patent US5849435A successfully refreshed from Google Patents.
US5849435A
Expired / Lapsed
US
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Method for forming a thin uniform layer of resist for lithography
Assignee: Micron Technology Inc
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Filing: 1997-03-04
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Granted: 1998-12-15
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Expires: 2017-03-04
Abstract
Abstract A method for forming a layer of resist on a non-planar substrate includes the steps of: dispensing resist onto the substrate; spinning the substrate to spread the resist; and then vibrating the substrate to eliminate voids in the resist. Optionally, the substrate can be inverted and vibrated at the same time to distribute the resist over the sidewalls of any projections or plateaus on the non-planar substrate. Following the vibrating and optional inversion steps, the resist is partially hardened, an edge bead is removed and a backside of the resist is washed. These steps are followed by soft bake, exposure and development of the layer of resist.
Inventors
- 👤 Salman Akram
- 👤 Paul Shirley
- 👤 William Rericha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/16; G03F7/168; G03F7/162
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
50 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to spread the resist; vibrating the substrate; inverting the substrate during or following the vibrating step; removing an edge bead of resist from the substrate; and heating the resist.
Claim 2
Independent Claim
50 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to spread the resist; vibrating the substrate; inverting the substrate during or following the vibrating step; removing an edge bead of resist from the substrate; and heating the resist.
Claim 3
Dependent Claim
24 words
The method as recited in claim 1 wherein the vibrating step is performed at a frequency of about one to 5000 cycles per second.
Claim 4
Dependent Claim
12 words
The method as recited in claim 1 wherein the substrate comprises silicon.
Claim 5
Independent Claim
36 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate; vibrating the substrate; and back side washing the substrate during or following the vibrating step.
Claim 6
Independent Claim
36 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate; vibrating the substrate; and back side washing the substrate during or following the vibrating step.
Claim 7
Dependent Claim
18 words
The method as recited in claim 4 further comprising inverting the substrate during or following the vibrating step.
Claim 8
Dependent Claim
18 words
The method as recited in claim 4 further comprising inverting and spinning the substrate during the vibrating step.
Claim 9
Dependent Claim
21 words
The method as recited in claim 4 further comprising heating, exposing and developing the layer of resist following the vibrating step.
Claim 10
Independent Claim
45 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to spread the resist; vibrating the substrate; removing an edge bead from the resist; washing a backside of the substrate; and heating the resist.
Claim 11
Independent Claim
45 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to spread the resist; vibrating the substrate; removing an edge bead from the resist; washing a backside of the substrate; and heating the resist.
Claim 12
Dependent Claim
24 words
The method as recited in claim 8 wherein the vibrating step is performed at a frequency of about one to 5000 cycles per second.
Claim 13
Dependent Claim
18 words
The method as recited in claim 8 further comprising inverting the substrate during or following the vibrating step.
Claim 14
Dependent Claim
18 words
The method as recited in claim 8 further comprising spinning and inverting the substrate during the vibrating step.
Claim 15
Dependent Claim
14 words
The method as recited in claim 8 wherein the non-planar substrate includes raised projections.
Claim 16
Dependent Claim
14 words
The method as recited in claim 8 wherein the non-planar substrate comprises semiconductor devices.
Claim 17
Independent Claim
60 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to distribute the resist over the substrate; vibrating the substrate at a frequency of about one to 5000 cycles per second; inverting the substrate; and removing an edge bead from the resist and washing a backside of the substrate.
Claim 18
Independent Claim
60 words
A method for forming a layer of resist on a non-planar substrate comprising: dispensing resist onto the substrate; spinning the substrate to distribute the resist over the substrate; vibrating the substrate at a frequency of about one to 5000 cycles per second; inverting the substrate; and removing an edge bead from the resist and washing a backside of the substrate.
Claim 19
Dependent Claim
16 words
The method as recited in claim 14 wherein the substrate comprises an interconnect for semiconductor dice.
Claim 20
Dependent Claim
21 words
The method as recited in claim 14 wherein the vibrating the substrate step is performed for about one to 60 seconds.
Claim 21
Dependent Claim
24 words
The method as recited in claim 14 wherein the spinning the substrate step is performed at a speed of about 2000 to 6000 rpms.
Claim 22
Dependent Claim
16 words
The method as recited in claim 14 further comprising spinning the substrate during the vibrating step.
Claim 23
Dependent Claim
18 words
The method as recited in claim 14 further comprising inverting the substrate following the spinning the substrate step.
Claim 24
Dependent Claim
24 words
The method as recited in claim 14 wherein the spinning the substrate step is performed at a speed of from one to 2000 rpms.
Claim 25
Dependent Claim
21 words
The method as recited in claim 14 further comprising partially hardening the resist prior to the removing the edge bead step.
Claim 26
Independent Claim
87 words
A method for forming a layer of resist comprising: providing a substrate comprising a layer with a non-planar topography; dispensing resist onto the substrate; spinning the substrate to spread the resist over the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; removing an edge bead of resist and washing a backside of the substrate; following the removing step, heating the resist; exposing the resist; developing the resist to form a resist mask; and etching the layer using the resist mask.
Claim 27
Independent Claim
87 words
A method for forming a layer of resist comprising: providing a substrate comprising a layer with a non-planar topography; dispensing resist onto the substrate; spinning the substrate to spread the resist over the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; removing an edge bead of resist and washing a backside of the substrate; following the removing step, heating the resist; exposing the resist; developing the resist to form a resist mask; and etching the layer using the resist mask.
Claim 28
Dependent Claim
13 words
The method as recited in claim 22 wherein the substrate comprises semiconductor devices.
Claim 29
Dependent Claim
17 words
The method as recited in claim 22 wherein the substrate comprises silicon and the layer comprises metal.
Claim 30
Independent Claim
100 words
A method for forming a layer of resist on an interconnect for semiconductor dice, said method comprising: providing a substrate comprising a plurality of raised projections at least partially covered with a layer; dispensing resist onto the substrate; spinning the substrate to spread the resist over the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; removing an edgebead of resist and washing a backside of the substrate; following the removing step, heating the resist; exposing the resist; developing the resist to form a resist mask; and etching the layer using the resist mask.
Claim 31
Independent Claim
100 words
A method for forming a layer of resist on an interconnect for semiconductor dice, said method comprising: providing a substrate comprising a plurality of raised projections at least partially covered with a layer; dispensing resist onto the substrate; spinning the substrate to spread the resist over the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; removing an edgebead of resist and washing a backside of the substrate; following the removing step, heating the resist; exposing the resist; developing the resist to form a resist mask; and etching the layer using the resist mask.
Claim 32
Independent Claim
46 words
A method for forming a layer of resist on a substrate having a non-planar topography comprising: dispensing resist onto the substrate; spinning the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; and inverting the substrate following the vibrating step.
Claim 33
Independent Claim
46 words
A method for forming a layer of resist on a substrate having a non-planar topography comprising: dispensing resist onto the substrate; spinning the substrate; vibrating the substrate at a frequency of from one to 5000 cycles per second; and inverting the substrate following the vibrating step.
Claim 34
Dependent Claim
16 words
The method as claimed in claim 26 further comprising heating the resist following the inverting step.
Claim 35
Dependent Claim
16 words
The method as claimed in claim 26 further comprising spinning the substrate during the inverting step.
Claim 36
Dependent Claim
20 words
The method as claimed in claim 26 further comprising washing a back side of the substrate following the inverting step.
Claim 37
Dependent Claim
20 words
The method as claimed in claim 26 further comprising removing an edge bead from the resist following the inverting step.
Claim 38
Dependent Claim
16 words
The method as claimed in claim 26 wherein the substrate includes a plurality of raised projections.
Claim 39
Dependent Claim
37 words
The method as claimed in claim 26 further comprising providing the substrate with a conductive layer, dispensing the resist over the conductive layer, and following the inverting step, etching the conductive layer using the layer of resist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-14 | 2002-06-15 | 2002-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-14 | 2006-06-15 | 2006-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-14 | 2010-06-15 | 2010-12-15 | $7700.00 | Window Closed / Lapsed |