Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
103 words
A method of fabricating an integrated circuit including a thin film of a metal compound, said method comprising the steps of: (a) providing an integrated circuit substrate; (b) providing a liquid precursor selected from the group consisting of metal alkoxides, metal carboxylates and combinations thereof and hexamethyl-disilazane; (c) applying said liquid precursor to said substrate to form a layer; (d) treating the layer deposited on said substrate to form a solid film of said metal compound; and (e) completing the fabrication of said integrated circuit to include at least a portion of said metal compound in an electrical component of said integrated circuit.
Claim 2
Independent Claim
103 words
A method of fabricating an integrated circuit including a thin film of a metal compound, said method comprising the steps of: (a) providing an integrated circuit substrate; (b) providing a liquid precursor selected from the group consisting of metal alkoxides, metal carboxylates and combinations thereof and hexamethyl-disilazane; (c) applying said liquid precursor to said substrate to form a layer; (d) treating the layer deposited on said substrate to form a solid film of said metal compound; and (e) completing the fabrication of said integrated circuit to include at least a portion of said metal compound in an electrical component of said integrated circuit.
Claim 3
Dependent Claim
20 words
A method of fabricating an integrated circuit as in claim 1 wherein said metal compound comprises a layered superlattice material.
Claim 4
Dependent Claim
30 words
The method of claim 2 wherein said layered superlattice material comprises a material selected from the group consisting of strontium bismuth tantalate, strontium bismuth niobate, and strontium bismuth tantalum niobate.
Claim 5
Dependent Claim
54 words
A method of fabricating an integrated circuit as in claim 1 wherein said step of applying comprises: (b) placing said substrate inside an enclosed deposition chamber; (c) producing a mist of said liquid precursor; and (d) flowing said mist through said deposition chamber to form a layer of the precursor liquid on said substrate.
Claim 6
Dependent Claim
26 words
A method of fabricating an integrated circuit as in claim 4 wherein said step of flowing is performed while maintaining said deposition chamber at ambient temperature.
Claim 7
Dependent Claim
40 words
The method of claim 4 wherein said step of providing a precursor includes the step of adding an initiator having a boiling point between 50° C. and 100° C. to said precursor prior to said step of producing a mist.
Claim 8
Dependent Claim
24 words
The method of claim 6 wherein said initiator comprises a solvent selected from the group consisting of methyl ethyl ketone, isopropanal, methanol, and tetrahydrofuran.
Claim 9
Dependent Claim
28 words
A method of fabricating an integrated circuit as in claim 1 wherein said step of applying comprises using a spin-on process to apply said precursor to said substrate.
Claim 10
Dependent Claim
31 words
The method of claim 1, wherein said step of treating includes one or more steps selected from the group consisting of drying, baking and annealing said layer deposited on said substrate.
Claim 11
Dependent Claim
31 words
The method of claim 9 wherein said step of drying comprises maintaining said substrate with said liquid deposited on it at a pressure less than atmospheric and above 10 -6 Torr.
Claim 12
Dependent Claim
20 words
The method of claim 9 wherein said step of drying comprises heating said substrate with said liquid deposited on it.
Claim 13
Dependent Claim
23 words
The method of claim 1 wherein said liquid precursor includes a solvent selected from the group consisting of xylene, n-butyl acetate, and 2-methoxyethanol.
Claim 14
Dependent Claim
36 words
The method of claim 1 wherein said metal includes a metal selected from the group consisting of strontium, calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, scandium, yttrium, lanthanum, antimony, chromium, and thallium.