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Patent US5841584A successfully refreshed from Google Patents.
US5841584A
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Dielectric multilayered reflector
Assignee: Sharp Corp
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Filing: 1996-04-26
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Granted: 1998-11-24
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Expires: 2016-04-26
Abstract
Abstract The dielectric multilayered reflector of the invention is formed on at least one of two emitting surfaces of a semiconductor laser device. The dielectric multilayered reflector includes: a multilayered structure formed by stacking a plurality of layers; and a layer made of magnesium difluoride. In this dielectric multilayered reflector, the multilayered structure includes at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.
Inventors
- 👤 Kunihiro Takatani
- 👤 Toshiyuki Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:44
CPC Classifications
G; G02; G02B; G02B5/00; G02B5/08; G02B5/0816; G02B5/0825; G02B5/0833; H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H10; H10W; H10W44/00; H10W44/401; H01S5/0281; H01S5/0282
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
84 words
A dielectric multilayered reflector, which is formed on at least one of two emitting surfaces of a semiconductor laser device, comprising: a multilayered structure formed by stacking a plurality of layers on one of the emitting surfaces of the semiconductor laser device; and a layer made of magnesium difluoride, wherein the multilayered structure comprises at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.
Claim 2
Dependent Claim
84 words
A dielectric multilayered reflector, which is formed on at least one of two emitting surfaces of a semiconductor laser device, comprising: a multilayered structure formed by stacking a plurality of layers on one of the emitting surfaces of the semiconductor laser device; and a layer made of magnesium difluoride, wherein the multilayered structure comprises at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.
Claim 3
Dependent Claim
47 words
A dielectric multilayered reflector according to claim 1, wherein the oxide dielectric material is at least one material selected from the group consisting of: silicon dioxide (SiO 2 ); titanium dioxide (TiO 2 ); zirconium dioxide (ZrO 2 ); and tantalum pentoxide (Ta 2 O 5 ).
Claim 4
Dependent Claim
26 words
A dielectric multilayered reflector according to claim 1, wherein the multilayered structure is formed by periodically stacking a plurality of layers having respectively different refractive indices.
Claim 5
Dependent Claim
37 words
A dielectric multilayered reflector according to claim 1, wherein the multilayered structure is formed by alternately stacking three pairs of layers made of silicon dioxide (SiO 2 ) and layers made of titanium dioxide (TiO 2 ).
Claim 6
Dependent Claim
64 words
The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group II-VI compound semiconductor and wherein the plurality of layers of the multilayered structure are formed by an alternating EB deposition within a vacuum container at a temperature of about 100° C., to about 150° C., thereby enhancing the adhesion strength among the plurality of layers in the multilayer structure.
Claim 7
Dependent Claim
20 words
The dielectric multilayered reflector according to claim 5, wherein a pressure in the vacuum container is about 4×10 -6 Torr.
Claim 8
Dependent Claim
21 words
The dielectric multilayered reflector according to claim 5, wherein the EB deposition includes introducing oxygen for compensation of oxygen atom vacancies.
Claim 9
Dependent Claim
38 words
The dielectric multilayered reflector according to claim 1, wherein a thickness of the magnesium difluoride layer is such that an optical thickness of the magnesium difluoride layer is one-half of a lasing wavelength of the semiconductor laser device.
Claim 10
Dependent Claim
60 words
The dielectric multilayered reflector according to claim 5, wherein the semiconductor laser comprises a group II-VI compound semiconductor and wherein the magnesium difluoride layer is formed by an alternating EB deposition within a vacuum container at a temperature of about 100° C. to about 150° C., thereby enhancing the adhesion strength between the multilayered structure and the magnesium difluoride layer.
Claim 11
Dependent Claim
63 words
The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a higher refractive index than the second layers, and wherein the first layers exert stress in one direction and the second layers exert stress in an opposite direction, thereby reducing a total stress of the multilayered structure.
Claim 12
Dependent Claim
43 words
The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a refractive index of about 2.3 and the second layers have a refractive index of about 1.45.
Claim 13
Dependent Claim
19 words
The dielectric multilayered reflector of claim 1, wherein the magnesium difluoride layer has a refractive index of about 1.36.
Claim 14
Dependent Claim
54 words
The dielectric multilayered reflector of claim 11, wherein the semiconductor laser has a lasing wavelength of about 520 nm and the first layers each have a thickness of about 56.52 nm, the second layers each have a thickness of about 89.66 nm and the magnesium difluoride layer has a thickness of about 191.18 nm.
Claim 15
Dependent Claim
64 words
The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group III-V compound semiconductor and wherein the plurality of layers of the multilayered structure are formed by an alternating EB deposition within a vacuum container at a temperature of about 200° C., to about 250° C., thereby enhancing the adhesion strength among the plurality of layers in the multilayer structure.
Claim 16
Dependent Claim
60 words
The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group III-V compound semiconductor and wherein the magnesium difluoride layer is formed by an alternating EB deposition within a vacuum container at a temperature of about 200° C. to about 250° C., thereby enhancing the adhesion strength between the multilayered structure and the magnesium difluoride layer.
Claim 17
Dependent Claim
43 words
The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a refractive index of about 1.45 and the second layers have a refractive index of about 3.6.
Claim 18
Dependent Claim
52 words
The dielectric multilayered reflector of claim 16, wherein the semiconductor laser has a lasing wavelength of about 780 nm and the first layers each have a thickness of about 134.48 nm, the second layers each have a thickness of about 54.17 nm magnesium difluoride layer has a thickness of about 286.76 nm.
Claim 19
Dependent Claim
23 words
The dielectric multilayered reflector of claim 1, wherein the magnesium difluoride layer has a thickness of about 100 nm to about 600 nm.
References Cited (Backward Citations)
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