Patent US5840628A successfully refreshed from Google Patents.
US5840628A
Expired / Lapsed
US
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Plasma CVD method for depositing tin layer
Assignee: Sony Corp
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Filing: 1995-06-13
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Granted: 1998-11-24
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Expires: 2015-06-13
Abstract
Abstract A two-step plasma CVD method is adopted whereby a first TiN layer is deposited in a first plasma CVD process having a low TiCl4 partial pressure and, subsequently, a second TiN layer is deposited in a second plasma CVD process having a high TiCl4 partial pressure. By depositing a TiN bimetal layer with excellent step coverage, the amount of chlorine, which is piled up with ease on a boundary surface interfacing with a lower Ti layer, can be reduced, preventing after-corrosion of an Al-based metal layer. On top of that, the small amount of chlorine allows the contact resistance to be reduced.
Inventors
- 👤 Takaaki Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:01
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C30B25/14; C30B29/00; C30B29/10; C30B29/40; H10P; H10P14/00; H10P14/20
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
71 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with a low mixture ratio of said Ti-based gas in said mixture gas is carried out prior to a second plasma CVD process with an increased mixture ratio of said Ti-based gas in said mixture gas.
Claim 2
Dependent Claim
71 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with a low mixture ratio of said Ti-based gas in said mixture gas is carried out prior to a second plasma CVD process with an increased mixture ratio of said Ti-based gas in said mixture gas.
Claim 3
Dependent Claim
72 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with a high mixture ratio of said H 2 in said mixture gas is carried out prior to a second plasma CVD process with a decreased mixture ratio of said H 2 gas in said mixture gas.
Claim 4
Dependent Claim
72 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with a high mixture ratio of said H 2 in said mixture gas is carried out prior to a second plasma CVD process with a decreased mixture ratio of said H 2 gas in said mixture gas.
Claim 5
Dependent Claim
79 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with low mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas is carried out prior to a second plasma CVD process with increased mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas.
Claim 6
Dependent Claim
79 words
A plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said plasma CVD method wherein a first plasma CVD process with low mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas is carried out prior to a second plasma CVD process with increased mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas.
Claim 7
Dependent Claim
24 words
A plasma CVD method according to claim 1, 2 or 3 wherein said Ti-based gas is either halogen titanium or an organic titanium compound.
Claim 8
Dependent Claim
28 words
A plasma CVD method according to claim 1, 2 or 3 wherein said nitrogen-based gas is either N 2 , NH 3 or N 2 H 4 .
Claim 9
Dependent Claim
40 words
A plasma CVD method according to claim 1 wherein a relative ratio of said Ti-based gas mixture ratio in said first plasma CVD process to said Ti-based gas mixture ratio in said second plasma CVD process is 1/10 to 5/10.
Claim 10
Dependent Claim
38 words
A plasma CVD method according to claim 6 wherein a relative ratio of said H 2 gas in said first plasma CVD process to said H 2 gas in said second plasma CVD process is 1/2 to 8/2.
Claim 11
Dependent Claim
26 words
A plasma CVD method according to claim 7 wherein a ratio of said nitrogen-based gas is fixed in both said first and second plasma CVD processes.
Claim 12
Dependent Claim
37 words
A plasma CVD method according to claim 2 wherein a ratio of said H 2 gas in said first plasma CVD process to said H 2 gas in said second plasma CVD process is 17/13 to 50/13.
Claim 13
Dependent Claim
29 words
A plasma CVD method according to claim 9 wherein ratios of said Ti-based gas and said nitrogen-based gas are fixed in both said first and second plasma CVD processes.
Claim 14
Dependent Claim
35 words
A plasma CVD method according to claim 3 wherein a ratio of said Ti-based gas in said first plasma CVD process to said Ti-based gas in said second plasma CVD process is 1/10 to 5/10.
Claim 15
Dependent Claim
26 words
A plasma CVD method according to claim 11 wherein a ratio of said nitrogen-based gas is fixed in both said first and second plasma CVD processes.
Claim 16
Dependent Claim
37 words
A plasma CVD method according to claim 11 wherein a ratio of said H 2 gas in said first plasma CVD process to said H 2 gas in said second plasma CVD process is 3/13 to 7/13.
Claim 17
Dependent Claim
87 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having a low mixture ratio of said Ti-based gas in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having an increased mixture ratio of said Ti-based gas in said mixture gas.
Claim 18
Dependent Claim
87 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having a low mixture ratio of said Ti-based gas in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having an increased mixture ratio of said Ti-based gas in said mixture gas.
Claim 19
Dependent Claim
87 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having a high mixture ratio of said H 2 in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having a decreased mixture ratio of said H 2 in said mixture gas.
Claim 20
Dependent Claim
87 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having a high mixture ratio of said H 2 in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having a decreased mixture ratio of said H 2 in said mixture gas.
Claim 21
Dependent Claim
95 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having low mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having increased mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas.
Claim 22
Dependent Claim
95 words
An optical plasma CVD method for depositing TiN layers on a processed substrate by using mixture gas comprising Ti-based gas, H 2 gas and nitrogen-based gas, said optical plasma CVD method wherein a first optical plasma CVD process radiating an exciting light beam and having low mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas is carried out prior to a second optical plasma CVD process radiating an exciting light beam and having increased mixture ratios of said Ti-based gas and said H 2 gas in said mixture gas.
Claim 23
Dependent Claim
25 words
An optical plasma CVD method according to claim 14, 15 or 16 where said Ti-based gas is either halogen titanium or an organic titanium compound.
Claim 24
Dependent Claim
29 words
An optical plasma CVD method according to claim 14, 15 or 16 wherein said nitrogen-based gas is either N 2 , NH 3 or N 2 H 4 .
Claim 25
Dependent Claim
146 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said Ti-based gas is present at a first mixture ratio of Ti-based gas to the remaining gases, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said Ti-based gas is present at a third mixture ratio of Ti-based gas to the remaining gases, said third mixture ratio being higher than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
Claim 26
Dependent Claim
146 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said Ti-based gas is present at a first mixture ratio of Ti-based gas to the remaining gases, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said Ti-based gas is present at a third mixture ratio of Ti-based gas to the remaining gases, said third mixture ratio being higher than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
Claim 27
Dependent Claim
150 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas is present at a first mixture ratio of H 2 gas to the remaining gases, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas is present at a third mixture ratio of H 2 gas to the remaining gases, said third mixture ratio being lower than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
Claim 28
Dependent Claim
150 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas is present at a first mixture ratio of H 2 gas to the remaining gases, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas is present at a third mixture ratio of H 2 gas to the remaining gases, said third mixture ratio being lower than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
Claim 29
Dependent Claim
154 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas and Ti-based gas are present at a first mixture ratio of H 2 gas to Ti-based gas, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas and Ti-based gas are present at a third mixture ratio of H 2 gas to Ti-based gas, said third mixture ratio being lower than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
Claim 30
Dependent Claim
154 words
A plasma CVD method for depositing TiN layers on a processed substrate using a mixture of gases, said plasma CVD method comprising the steps of: performing a first plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas and Ti-based gas are present at a first mixture ratio of H 2 gas to Ti-based gas, and wherein said nitrogen based gas is present at a second mixture ratio of nitrogen based gas to the remaining gases; and performing a second plasma CVD process wherein said mixture of gases comprise Ti-based gas, H 2 gas, and nitrogen-based gas, wherein said H 2 gas and Ti-based gas are present at a third mixture ratio of H 2 gas to Ti-based gas, said third mixture ratio being lower than said first ratio, and wherein said nitrogen based gas remains present at said second mixture ratio.
References Cited (Backward Citations)
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