US5840600A
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Method for producing semiconductor device and apparatus for treating semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-08-30
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Granted: 1998-11-24
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Expires: 2015-08-30
Abstract
Abstract In forming an insulating film for a thin film transistor (TFT), a thermal oxidation film is formed by oxidation of silicon film at 500° to 700° C. or an insulating film composed mainly of silicon oxide deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is formed so as to cover island-like crystalline silicon, and then the resulting film is annealed at 400° to 700° C., preferably 450° to 650° C. in a highly reactive atmosphere of nitrogen oxide which is photoexcited or photodecomposed by ultraviolet rays. The thus modified silicon oxide film is used as the gate insulating film.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Mitsunori Sakama
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3806; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6538; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P95/00
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
73 words
A method for forming semiconductor device comprising the steps of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a thermal oxidation film as a gate insulating film by thermally oxidizing the silicon film, the thermal oxidation film covering the silicon film; and annealing the thermal oxidation film at 400° to 700° C. in an atmosphere including nitrogen oxide which is excited or decomposed by ultraviolet light.
Claim 2
Independent Claim
73 words
A method for forming semiconductor device comprising the steps of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a thermal oxidation film as a gate insulating film by thermally oxidizing the silicon film, the thermal oxidation film covering the silicon film; and annealing the thermal oxidation film at 400° to 700° C. in an atmosphere including nitrogen oxide which is excited or decomposed by ultraviolet light.
Claim 3
Dependent Claim
60 words
The method of claim 1 further comprising the steps of: forming on the insulating surface an amorphous silicon film having an element which promotes crystallization of amorphous silicon at a concentration of at least 1×10 15 to 3×10 19 atoms/cm 3 as determined by secondary ion mass spectrometry; and crystallizing the amorphous silicon film to form the island silicon region.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the substrate includes a glass material containing silicon, oxygen and boron, and has a strain point of 550° to 680° C.
Claim 5
Independent Claim
76 words
A method for forming semiconductor device comprising the step of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a gate insulating film including silicon oxide by one of chemical vapor deposition and physical vapor deposition, the gate insulating film covering the island silicon region; and annealing the gate insulating film at 400° to 700° C. in an atmosphere including nitrogen oxide which is excited or decomposed by ultraviolet light.
Claim 6
Independent Claim
76 words
A method for forming semiconductor device comprising the step of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a gate insulating film including silicon oxide by one of chemical vapor deposition and physical vapor deposition, the gate insulating film covering the island silicon region; and annealing the gate insulating film at 400° to 700° C. in an atmosphere including nitrogen oxide which is excited or decomposed by ultraviolet light.
Claim 7
Dependent Claim
61 words
The method of claim 4 further comprising the steps of: forming on the insulating surface an amorphous silicon film having an element which promotes crystallization of amorphous silicon at a concentration of at least 1×10 15 to 3×10 19 atoms/cm 3 as a result by secondary ion mass spectrometry; and crystallizing the amorphous silicon film to form the island silicon region.
Claim 8
Dependent Claim
14 words
The method of claim 4 wherein the gate insulating film is formed by sputtering.
Claim 9
Dependent Claim
19 words
The method of claim 4 wherein the gate insulating film is formed by electron cyclotron resonance chemical vapor deposition.
Claim 10
Dependent Claim
24 words
The method of claim 4 wherein the gate insulating film is formed by chemical vapor deposition using tetra ethoxy silane as a raw material.
Claim 11
Dependent Claim
35 words
The method of claim 4 wherein the gate insulating film is formed by one of low pressure chemical vapor deposition and plasma chemical vapor deposition using monosilane and oxygen or nitrogen oxide as raw materials.
Claim 12
Dependent Claim
27 words
The method of claim 4 wherein the substrate includes a glass material containing silicon, oxygen and boron, and has a strain point of 550° to 680° C.
Claim 13
Dependent Claim
25 words
The method of claim 4 wherein the gate insulating film further includes nitrogen at a concentration of 1×10 17 to 1×10 21 atoms/cm 3 .
Claim 14
Independent Claim
81 words
A method for forming semiconductor device comprising the steps of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a gate insulating film including silicon oxide by one of thermal oxidization, chemical vapor deposition and physical vapor deposition, the gate insulating film covering the island silicon region; and annealing the insulating film at 400° to 700° C. in an atmosphere including one of nitrogen oxide and hydrogen nitride which are excited or decomposed by catalyst.
Claim 15
Independent Claim
81 words
A method for forming semiconductor device comprising the steps of: forming an island silicon region including crystallinity on a substrate having an insulating surface; forming a gate insulating film including silicon oxide by one of thermal oxidization, chemical vapor deposition and physical vapor deposition, the gate insulating film covering the island silicon region; and annealing the insulating film at 400° to 700° C. in an atmosphere including one of nitrogen oxide and hydrogen nitride which are excited or decomposed by catalyst.
Claim 16
Dependent Claim
60 words
The method of claim 12 further comprising the steps of: forming on the insulating surface an amorphous silicon film having an element which promotes crystallization of amorphous silicon at a concentration of at least 1×10 15 to 3×10 19 atoms/cm 3 as determined by secondary ion mass spectrometry; and crystallizing the amorphous silicon film to form the island silicon region.
Claim 17
Dependent Claim
14 words
The method of claim 12 wherein the gate insulating film is formed by sputtering.
Claim 18
Dependent Claim
19 words
The method of claim 12 wherein the gate insulating film is formed by electron cyclotron resonance chemical vapor deposition.
Claim 19
Dependent Claim
24 words
The method of claim 12 wherein the gate insulating film is formed by chemical vapor deposition using tetra ethoxy silane as a raw material.
Claim 20
Dependent Claim
35 words
The method of claim 12 wherein the gate insulating film is formed by one of low pressure chemical vapor deposition and plasma chemical vapor deposition using monosilane and oxygen or nitrogen oxide as raw materials.
Claim 21
Dependent Claim
27 words
The method of claim 12 wherein the substrate includes a glass material containing silicon, oxygen and boron, and has a strain point of 550° to 680° C.
Claim 22
Dependent Claim
25 words
The method of claim 12 wherein the gate insulating film further includes nitrogen at a concentration of 1×10 17 to 1×10 21 atoms/cm 3 .
Claim 23
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon in a shape of an island over a substrate by chemical vapor deposition; forming a gate insulating film on said semiconductor layer by electron cyclotron resonance chemical vapor deposition utilizing a reactive gas comprising silane and a nitrogen oxide gas; annealing said gate insulating film in an atmosphere including a nitrogen containing gas; and then forming a gate electrode on said gate insulating film.
Claim 24
Independent Claim
81 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon in a shape of an island over a substrate by chemical vapor deposition; forming a gate insulating film on said semiconductor layer by electron cyclotron resonance chemical vapor deposition utilizing a reactive gas comprising silane and a nitrogen oxide gas; annealing said gate insulating film in an atmosphere including a nitrogen containing gas; and then forming a gate electrode on said gate insulating film.
Claim 25
Dependent Claim
14 words
A method according to claim 20 wherein said nitrogen oxide gas comprises dinitrogen monoxide.
Claim 26
Independent Claim
71 words
A method of manufacturing a semiconductor device comprising the steps of: forming a crystalline semiconductor layer comprising silicon in a shape of an island on an insulating surface of a substrate; forming a gate insulating film comprising silicon oxide on said semiconductor layer; annealing said gate insulating film in an atmosphere including a nitrogen containing gas excited by UV light; and then forming a gate electrode on said gate insulating film.
Claim 27
Independent Claim
71 words
A method of manufacturing a semiconductor device comprising the steps of: forming a crystalline semiconductor layer comprising silicon in a shape of an island on an insulating surface of a substrate; forming a gate insulating film comprising silicon oxide on said semiconductor layer; annealing said gate insulating film in an atmosphere including a nitrogen containing gas excited by UV light; and then forming a gate electrode on said gate insulating film.
Claim 28
Dependent Claim
31 words
A method according to claim 22 wherein said crystalline semiconductor layer contains a catalyst element for promoting crystallization of silicon in a concentration not higher than 3×10 19 atoms/cm 3 .
Claim 29
Dependent Claim
21 words
A method according to claim 23 wherein said concentration is determined by a minimum value of a secondary ion mass spectrometry.
Claim 30
Dependent Claim
16 words
A method according to claim 22 wherein said UV light is emitted by a mercury lamp.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-23 | 2002-05-25 | 2002-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-23 | 2006-05-25 | 2006-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-23 | 2010-05-25 | 2010-11-24 | $7700.00 | Window Closed / Lapsed |